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| WFP9N20 FP9 Silicon N-Channel MOSFET Features 9A, 200V, RDS(on)(Max 0.4)@VGS=10V Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. G D S TO220 Absolute Maximum Ratings Symbol VDSS Drain Source Voltage Parameter Continuous Drain Current(@Tc=25) Continuous Drain Current(@Tc=100) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25) Derating Factor above 25 Junction and Storage Temperature Maximum lead Temperature for soldering purposes (Note 2) (Note 1) (Note 3) (Note1) Value 200 Units V ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL 9 5.7 36 30 160 7.2 5.5 72 0.57 -55~150 300 A A A V mJ mJ V/ns W W/ Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient Min - Value Typ 0.5 - Max 1.74 62.5 Units /W /W /W Rev, C Dec.2009 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. T03-1 WFP9N20 FP9N20 Electrical Characteristics (Tc = 25C) 25 Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Break Voltage Temperature Coefficient Gate threshold voltage Drain-source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") Charge Qg Qgs Qgd tf toff RG=12 (Note4,5) VDD = 160 V, VGS = 10 V, ID = 5.9 A (Note4,5) 7 23 nC 39 20 43 - Symbol IGSS V(BR)GSS IDSS V(BR)DSS BVDSS/ Test Condition VGS = 30 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 200 V, VGS = 0 V ID = 250 A, VGS = 0 V ID=250A, Referenced to 25 Min 30 200 - Type 0.2 Max 100 10 - Unit nA V A V V/ TJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton VDS = 10 V, ID =250 A VGS = 10 V, ID = 5.4A VDS = 50 V, ID =5.4A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD =100 V, ID = 5.9 A 2 3.8 800 240 76 9.4 28 4 0.4 ns pF V S Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 9 A, VGS = 0 V IDR = 5.9A, VGS = 0 V, dIDR / dt = 100 A / s Min - Type 1.4 170 1.1 Max 9 36 2.0 340 2.2 Unit A A V ns C Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=500uH,IAS=9 A,VDD=50V,RG=0,Starting TJ=25 3.ISD9A,di/dt300A/us, VDD Steady, all for your advance . WFP9N20 FP9N20 Fig. 1 On-State Characteristics Fig.2 Transfer Characteristics Fig.3 On-Resistance Variation vs Drain Current Fig.4 Body Diode Forward Voltage Variation vs. Source Current and Temperature Fig.5 On-Resistance Variation vs Junction Temperature Fig.6 Gate Charge Characteristics 3/7 Steady, all for your advance . WFP9N20 FP9N20 Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response Curve 4/7 Steady, all for your advance . WFP9N20 FP9N20 Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 Steady, all for your advance . WFP9N20 FP9N20 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, all for your advance . WFP9N20 FP9N20 TO-220 Package Dimension Unit: mm 7/7 Steady, all for your advance . |
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