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DJT4031N
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
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Features
* * * * * * Ideally Suited for Automated Assembly Processes Complementary PNP Type Available (DJT4030P) Low Collector-Emitter Saturation Voltage Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2)
Mechanical Data
* * * * * * * Case: SOT-223 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish -- Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.115 grams (approximate)
NEW PRODUCT
COLLECTOR 2,4
3E C4 2C 1B
Pin Out Configuration
1 BASE 3 EMITTER
Top View Device Schematic
Maximum Ratings
@TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO ICM IC IB Value 40 40 6 5 3 1 Unit V V V A A A
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current
Thermal Characteristics
Characteristic Power Dissipation (Note 3) @ TA = 25C Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25C Power Dissipation (Note 4) @ TA = 25C Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25C Operating and Storage Temperature Range
Notes:
Symbol PD RJA PD RJA TJ, TSTG
Value 1.2 104 2 62.5 -55 to +150
Unit W C/W W C/W C
1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with minimum recommended pad layout. 4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.
DJT4031N
Document number: DS31603 Rev. 2 - 2
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DJT4031N Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage @TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min 40 40 6 220 200 100 Typ 105 27 180 45 14 31 276 244 32 Max 100 50 100 500 100 150 300 100 1.0 1.0 Unit V V V nA A nA Test Conditions IC = 100A IC = 10mA IE = 50A VCB = 40V, IE = 0 VCB = 40V, IE = 0, TA = 150C VEB = 6V, IC = 0 VCE = 1V, IC = 0.5A VCE = 1V, IC = 1A VCE = 1V, IC = 3A IC = 0.5A, IB = 5mA IC = 1A, IB = 10mA IC = 3A, IB = 0.3A IE = 3A, IB = 0.3A IC = 1A, IB = 0.1A VCE = 2V, IC = 1A VCE = 10V, IC = 100mA, f = 100MHz VCB = 10V, f = 1MHz VCB = 5V, f = 1MHz VCC = 10V, IC = 2A, IB1 = 200mA VCC = 10V, IC = 2A, IB1 = IB2 = 200mA
NEW PRODUCT
Collector-Base Cutoff Current Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain
hFE
Collector-Emitter Saturation Voltage Equivalent On-Resistance Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage SMALL SIGNAL CHARACTERISTICS Transition Frequency Output Capacitance Input Capacitance SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time
Notes:
VCE(SAT) RCE(SAT) VBE(SAT) VBE(ON) fT Cobo CIbo ton td tr toff ts tf
mV m V V MHz pF pF ns ns ns ns ns ns
4. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%.
2.0
10
PD, POWER DISSIPATION (W)
1.6
IC, COLLECTOR CURRENT (A)
Pw = 1ms
1
DC Pw = 100ms Pw = 10ms
1.2
(Note 4)
0.8
(Note 3)
0.10
0.4
0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature
0.01 0.1
1 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage (Note 3)
DJT4031N
Document number: DS31603 Rev. 2 - 2
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March 2009
(c) Diodes Incorporated
DJT4031N
600
VCE = 1V
1
IC/IB = 10
hFE, DC CURRENT GAIN
TA = 150C
400
T A = 85C
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
500
0.1
TA = 150C T A = 85C
NEW PRODUCT
300
T A = 25C
200
T A = -55C
0.01
TA = 25C TA = -55C
100 0 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current 1
0.001 1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
VCE = 1V
1.2
IC/IB = 10
1.0
1.0
0.8
T A = -55C
0.8
TA = -55C
0.6
T A = 25C
0.6
TA = 25C
0.4
T A = 85C
0.4
TA = 85C
0.2
TA = 150C
0.2
T A = 150C
0 0.1
1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current
0 0.1
1 10 100 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current
1,000
f = 1MHz
CAPACITANCE (pF)
Cibo
100
Cobo
10 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics
DJT4031N
Document number: DS31603 Rev. 2 - 2
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March 2009
(c) Diodes Incorporated
DJT4031N
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
0.1
D = 0.1 D = 0.05 RJA(t) = r(t) * RJA RJA = 101C/W P(pk) D = 0.01 D = 0.005
NEW PRODUCT
D = 0.9
D = 0.02
0.01
t1
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2
D = Single Pulse
0.001 0.00001
0.0001
0.001
0.01 0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 8 Transient Thermal Response (Note 3)
100
1,000
10,000
Ordering Information
Part Number DJT4031N-13
Notes:
(Note 5) Case SOT-223 Packaging 2500/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YWW ZNS34
ZNS34 = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year (ex: 8 = 2008) WW = Week code 01 - 52
Package Outline Dimensions
SOT-223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e -- -- 4.60 e1 -- -- 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm
A A1
DJT4031N
Document number: DS31603 Rev. 2 - 2
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March 2009
(c) Diodes Incorporated
DJT4031N Suggested Pad Layout
X1 Y1
NEW PRODUCT
C1
Y2 C2 X2
Dimensions X1 X2 Y1 Y2 C1 C2
Value (in mm) 3.3 1.2 1.6 1.6 6.4 2.3
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DJT4031N
Document number: DS31603 Rev. 2 - 2
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March 2009
(c) Diodes Incorporated

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