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NTJS3157N Trench Power MOSFET
20 V, 4.0 A, Single N-Channel, SC-88
Features
* Leading Trench Technology for Low RDS(ON) Extending Battery Life * Fast Switching for Increased Circuit Efficiency * SC-88 Small Outline (2 x 2 mm) for Maximum Circuit Board *
Utilization, Same as SC-70-6 Pb-Free Packages are Available
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V(BR)DSS 20 V RDS(on) Typ 45 mW @ 4.5 V 55 mW @ 2.5 V 70 mW @ 1.8 V 4.0 A ID Max
Applications
* DC-DC Conversion * Low Side Load Switch * Cell Phones, Computing, Digital Cameras, MP3s and PDAs
D
SC-88 (SOT-363)
1
6
D
MAXIMUM RATINGS (TJ = 25C unless otherwise stated)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t5s Power Dissipation (Note 1) Pulsed Drain Current Steady State TA = 25 C TA = 85 C TA = 25 C TA = 25 C tp = 10 ms PD IDM TJ, TSTG IS TL Symbol VDSS VGS ID Value 20 8.0 3.2 2.3 4.0 1.0 10 -55 to 150 1.6 260 W A Unit V V A G 3 Top View 4 S D 2 5 D
MARKING DIAGRAM & PIN ASSIGNMENT
D 1 SOT-363 CASE 419B STYLE 28 6 T92 M G G 1 D D G D S
Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s)
C
A C
THERMAL RESISTANCE RATINGS (Note 1)
Parameter Junction-to-Ambient - Steady State Junction-to-Ambient - t 5 s Junction-to-Lead - Steady State Symbol RqJA RqJA RqJL Max 125 80 45 Unit C/W T92 M G
= Device Code = Date Code = Pb-Free Package
(Note: Microdot may be in either location)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.
(c) Semiconductor Components Industries, LLC, 2006
February, 2006 - Rev. 2
1
Publication Order Number: NTJS3157N/D
NTJS3157N
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = 250 mA VGS = 4.5 V, ID = 4.0 A VGS = 2.5 V, ID = 3.6 A VGS = 1.8 V, ID = 2.0 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VSD tRR Ta Tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 1.6 A VGS =0 V, IS = 1.6 A TJ = 25C VGS = 4.5 V, VDD = 10 V, ID = 0.5 A, RG = 6.0 W 6.0 12 21 11 15 25 45 25 ns CISS COSS CRSS QG(TOT) QGS QGD VGS = 4.5 V, VDS = 10 V, ID = 3.2 A VGS = 0 V, f = 1.0 MHz, VDS = 10 V 500 75 60 6.9 1.0 1.8 15 nC pF gFS VGS = 10 V, ID = 3.2 A VGS = 0 V, ID = 250 mA VGS = 0 V, ID = 250 mA VGS = 0 V, VDS = 16 V TJ = 25C TJ = 85C 20 12 1.0 5.0 100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit
Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance
VDS = 0 V, VGS = 8.0 V 0.40 -4.0 45 55 70 9.0
V mV/C 60 70 85 S mW
DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 0.7 15 12 3.0 5.0 nC 1.0 V ns
2. Pulse Test: pulse width 300 ms, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.
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NTJS3157N
TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted)
10 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 8 6 4 2 0 0 0.8 V 1.4 V 1.2 V 1V 1 2 3 4 5 6 7 8 9 10 8V 4V 2V VGS = 1.8 V TJ = 25C 1.6 V 12 VDS 10 V 10 8 6 4 2 0 0 TJ = -55C TJ = 125C 2.5 1.5 0.5 1 2 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 3 25C
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.25 0.2 ID = 4 A TJ = 25C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.1 0.09 0.08 0.07 0.06 0.05 0.04 0.03 1 2
Figure 2. Transfer Characteristics
TJ = 25C
0.15 0.1
VGS = 1.8 V
VGS = 2.5 V VGS = 4.5 V 3 4 6 7 5 ID, DRAIN CURRENT (AMPS) 8 9
0.05 0 1 3 5 7 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. On-Resistance vs. Gate-to-Source Voltage
1.8 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 1.4 1.2 1 0.8 0.6 -50 100 10000
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
ID = 4.0 A VGS = 4.5 V
VGS = 0 V TJ = 150C
IDSS, LEAKAGE (nA)
1000
TJ = 100C
-25
0
25
50
75
100
125
150
2
4
6
8
10
12
14
16
18
20
TJ, JUNCTION TEMPERATURE (C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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NTJS3157N
TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1400 1200 C, CAPACITANCE (pF) 1000 800 600 Crss 400 200 0 8 Crss 4 VGS 0 VDS 4 8 12 16 Coss 20 Ciss 5 4 3 2 1 0 QGS QGD 10 8 6 4 2 0
VDS = 0 V Ciss
VGS = 0 V
TJ = 25C
QG(TOT) VDS VGS
ID = 3.2 A TJ = 25C 0 1 3 5 2 4 6 Qg, TOTAL GATE CHARGE (nC) 7 8
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge
100
IS, SOURCE CURRENT (AMPS)
VDS = 10 V ID = 0.5 A VGS = 4.5 V
td(off)
6 tf tr 5 4 3 2 1 0 0.2
VGS = 0 V TJ = 25C
t, TIME (ns)
10
td(on)
1 1 10 RG, GATE RESISTANCE (OHMS) 100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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NTJS3157N
ORDERING INFORMATION
Device NTJS3157NT1 NTJS3157NT1G NTJS3157NT2 NTJS3157NT2G NTJS3157NT4 NTJS3157NT4G Package SC-88 SC-88 (Pb-Free) SC-88 SC-88 (Pb-Free) SC-88 SC-88 (Pb-Free) Shipping 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 10,000 Tape & Reel 10,000 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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NTJS3157N
PACKAGE DIMENSIONS
SC-88/SC70-6/SOT-363 CASE 419B-02 ISSUE W
D e A3
6 5 4
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. MILLIMETERS DIM MIN NOM MAX A 0.80 0.95 1.10 A1 0.00 0.05 0.10 A3 0.20 REF b 0.10 0.21 0.30 C 0.10 0.14 0.25 D 1.80 2.00 2.20 E 1.15 1.25 1.35 e 0.65 BSC L 0.10 0.20 0.30 HE 2.00 2.10 2.20 STYLE 28: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000
HE
1 2 3
-E-
C
b 6 PL 0.2 (0.008) A
M
L E
M
A1
SOLDERING FOOTPRINT*
0.50 0.0197
0.65 0.025 0.65 0.025
0.40 0.0157 1.9 0.0748
SCALE 20:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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NTJS3157N/D

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