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| CTA2P1N COMPLEX TRANSISTOR ARRAY Features * * * * * Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P Lead Free/RoHS Compliant (Note 1) "Green" Device (Note 3 and 4) A NEW P R ODUCT PROD UC T BC Mechanical Data * * * * * * * * * Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: A80, See Page 5 Ordering Information: See Page 5 Weight: 0.006 grams (approximate) K H M J CQ1 G Q2 D SQ2 F L SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 0 8 All Dimensions in mm Q1 Q2 EQ1 BQ1 DQ2 Maximum Ratings, Total Device Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range @TA = 25C unless otherwise specified Symbol (Note 2) (Note 2) Pd RJA Tj, TSTG Value 150 833 -55 to +150 Unit mW C/W C Maximum Ratings, Q1, MMBT4403 PNP Transistor Element Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCBO VCEO VEBO IC @TA = 25C unless otherwise specified Value -40 -40 -5.0 -600 Unit V V V mA Maximum Ratings, Q2, 2N7002 N-Channel MOSFET Element @TA = 25C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage RGS 1.0M Gate-Source Voltage Drain Current Continuous Pulsed (Note 2) Continuous Continuous @ 100C Pulsed Symbol VDSS VDGR VGSS ID Value 60 60 20 40 115 73 800 Units V V V mA Notes: 1. No purposefully added lead. 2. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30296 Rev. 9 - 2 1 of 5 www.diodes.com CTA2P1N (c) Diodes Incorporated Electrical Characteristics, Q1, MMBT4403 PNP Transistor Element @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5) 30 60 100 100 20 -0.75 1.5 0.1 60 1.0 200 300 -0.40 -0.75 -0.95 -1.30 8.5 30 15 8.0 500 100 15 20 225 30 IC = -100A, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -150mA, VCE = -2.0V IC = -500mA, VCE = -2.0V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VCB = -10V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 -4 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min -40 -40 -5.0 Max -100 -100 Unit V V V nA nA Test Condition IC = -100A, IE = 0 IC = -1.0mA, IB = 0 IE = -100A, IC = 0 VCE = -35V, VEB(OFF) = -0.4V VCE = -35V, VEB(OFF) = -0.4V NEW PRODUCT DC Current Gain hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time VCE(SAT) VBE(SAT) V V Ccb Ceb hie hre hfe hoe fT td tr ts tf pF pF k x 10 S MHz VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -20mA, f = 100MHz VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA ns ns ns ns Electrical Characteristics, Q2, 2N7002 N-Channel MOSFET Element @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Notes: 5. Short duration pulse test used to minimize self-heating effect. Symbol BVDSS @ TC = 25C @ TC = 125C IDSS IGSS VGS(th) @ Tj = 25C @ Tj = 125C RDS (ON) ID(ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 60 1.0 0.5 80 Typ 70 3.2 4.4 1.0 22 11 2.0 7.0 11 Max 1.0 500 10 2.0 7.5 13.5 50 25 5.0 20 20 Unit V A nA V A mS pF pF pF ns ns Test Condition VGS = 0V, ID = 10A VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID =-250A VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VDS = 25V, VGS = 0V f = 1.0MHz VDD = 30V, ID = 0.2A, RL = 150, VGEN = 10V, RGEN = 25 DS30296 Rev. 9 - 2 2 of 5 www.diodes.com CTA2P1N (c) Diodes Incorporated MMBT4403 Section 30 VCE, COLLECTOR-EMITTER VOLTAGE (V) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 1 0.01 0.1 10 100 IB, BASE CURRENT (mA) Fig. 2 Typical Collector Saturation Region IC = 1mA IC = 10mA IC = 100mA I = 300mA C IC = 30mA 20 NEW PRODUCT CAPACITANCE (pF) 10 5 1 -0.1 -1.0 -10 REVERSE VOLTAGE (V) Fig. 1 Typical Capacitance -30 0.5 VBE(ON), BASE EMITTER VOLTAGE (V) 1.0 IC IB = 10 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.9 0.8 TA = -50C VCE = 5V 0.4 0.3 TA = 25C 0.7 0.6 0.5 0.4 0.3 0.2 0.1 T A = 25C 0.2 TA = 150C TA = 150C 0.1 TA = 50C 0 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Collector Emitter Saturation Voltage vs. Collector Current VCE = 5V TA = 150C 1 10 IC, COLLECTOR CURRENT (mA) Fig. 4 Base-Emitter Voltage vs. Collector Current 100 1,000 1,000 fT, GAIN BANDWIDTH PRODUCT (MHz) hFE, DC CURRENT GAIN TA = 25C 100 TA = -50C 100 10 10 1 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 5 DC Current Gain vs. Collector Current 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Gain Bandwidth Product vs. Collector Current DS30296 Rev. 9 - 2 3 of 5 www.diodes.com CTA2P1N (c) Diodes Incorporated MMBT4403 Section (Continued) 200 PD, POWER DISSIPATION (mW) 150 NEW PRODUCT 100 50 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (C) Fig. 7 Max Power Dissipation vs. Ambient Temperature (Total Device) 200 2N7002 Section 1.0 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V 7 6 5 5.5V VGS = 5.0V Tj = 25C ID, DRAIN-SOURCE CURRENT (A) 0.8 0.6 4 5.0V 0.4 3 2 VGS = 10V 0.2 1 0 0 5 2 4 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 On-Region Characteristics (2N7002) 1 0 0 0.4 0.6 0.8 1.0 ID, DRAIN CURRENT (A) Fig. 9 On-Resistance vs. Drain Current (2N7002) 0.2 3.0 6 5 2.5 4 ID = 500mA ID = 50mA 2.0 3 2 1.5 VGS = 10V, ID = 200mA 1 1.0 -55 0 -5 20 45 70 95 120 145 Tj, JUNCTION TEMPERATURE (C) Fig. 10 On-Resistance vs. Junction Temperature (2N7002) -30 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 11 On-Resistance vs. Gate-Source Voltage (2N7002) 0 DS30296 Rev. 9 - 2 4 of 5 www.diodes.com CTA2P1N (c) Diodes Incorporated 2N7002 Section (Continued) 10 9 VGS, GATE SOURCE VOLTAGE (V) 8 7 6 5 4 3 2 1 0 0 0.4 0.6 0.8 1 ID, DRAIN CURRENT (A) Fig. 12 Typical Transfer Characteristics (2N7002) 0.2 NEW PRODUCT Ordering Information Device CTA2P1N-7-F Notes: 6. (Note 6) Packaging SOT-363 Shipping 3000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information A80 A80 = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Date Code Key Year Code Month Code 2004 R Jan 1 Feb 2 2005 S Mar 3 2006 T Apr 4 YM 2007 U May 5 Jun 6 2008 V Jul 7 2009 W Aug 8 2010 X Sep 9 Oct O 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30296 Rev. 9 - 2 5 of 5 www.diodes.com CTA2P1N (c) Diodes Incorporated |
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