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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1477 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min.) *Wide Area of Safe Operation *Complement to Type 2SD2236 APPLICATIONS *Designed for driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE -100 V -100 V -5 V -5 A 60 W UNIT .cn mi e IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1477 TYP. MAX UNIT V(BR)CEO Collector-Emitter Beakdown Voltage IC= -10mA; IB= 0 100 V V(BR)CBO Collector-Base Beakdown Voltage IC= -50A; IE=0 100 V V(BR)EBO Emitter-Base Beakdown Voltage IE=-50A; IC=0 5 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -1.5 V Base-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -2.0 V A A Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current hFE DC Current Gain hFE Classifications D 60-120 E 100-200 ww w F 160-320 scs .i VEB= -5V; IC= 0 IC= -1A; VCE= -5V .cn mi e 60 -10 -10 320 isc Websitewww.iscsemi.cn 2 |
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