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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-220 package High power dissipation Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2N6132 2N6133 2N6134 Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER 2N6132 2N6133 VCBO Collector-base voltage VCEO Collector-emitter voltage CHA IN NG S 2N6134 2N6132 2N6133 2N6134 Open emitter OND MIC E CONDITIONS TOR UC VALUE -40 -60 -80 -40 -60 -80 UNIT V Open base V VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature Open collector -5 -7 -3 V A A W ae ae TC=25ae 50 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.5 UNIT ae /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N6132 VCEO(SUS) Collector-emitter sustaining voltage 2N6133 2N6134 2N6132 IC=-0.1A ;IB=0 CONDITIONS 2N6132 2N6133 2N6134 SYMBOL MIN -40 -60 -80 TYP. MAX UNIT V -1.4 VCEsat Collector-emitter saturation voltage 2N6133 2N6134 VBE Base-emitter on voltage IC=-2.5A ; VCE=-4V VCE=-40V;VBE=1.5V TC=150ae VCE=-60V;VBE=1.5V TC=150ae IC=-7A;IB=-1.2A -1.8 -1.4 -0.5 -3.0 -0.5 -3.0 -0.5 -3.0 V V ICEV Collector cut-off current 2N6132 2N6133 2N6134 IEBO hFE fT Emitter cut-off current DC current gain Transition frequency CHA IN SEM NG VEB=-5V; IC=0 VCE=-80V; VBE=1.5V TC=150ae CON I TOR DUC -1.0 20 2.5 100 mA mA mA IC=-2.5A ; VCE=-4V IC=-0.2A ; VCE=-4V MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6132 2N6133 2N6134 NG S HA INC Fig.2 Outline dimensions(unindicated tolerance:A CON EMI TOR DUC 0.10 mm) 3 |
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