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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220 package High power dissipation Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2N6129 2N6130 2N6131 Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER 2N6129 2N6130 VCBO Collector-base voltage VCEO Collector-emitter voltage CHA IN NG S 2N6131 2N6129 2N6130 2N6131 Open emitter OND MIC E CONDITIONS TOR UC VALUE 40 60 80 40 60 80 UNIT V Open base V VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature Open collector 5 7 3 V A A W ae ae TC=25ae 50 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.5 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N6129 VCEO(SUS) Collector-emitter sustaining voltage 2N6130 2N6131 2N6129 VCEsat Collector-emitter saturation voltage IC=0.1A ;IB=0 2N6129 2N6130 2N6131 SYMBOL CONDITIONS MIN 40 60 80 TYP. MAX UNIT V 1.4 2N6130 2N6131 IC=7A;IB=1.2A 1.8 IC=2.5A ; VCE=4V 2N6129 VCE=40V;VBE=1.5V TC=150ae VCE=60V;VBE=1.5V TC=150ae VCE=80V; VBE=1.5V TC=150ae VEB=5V; IC=0 1.4 0.5 3.0 V V VBE Base-emitter on voltage ICEV Collector cut-off current IEBO hFE fT mA 2N6130 2N6131 Emitter cut-off current DC current gain Transition frequency CHA IN NG S IC=2.5A ; VCE=4V OND MIC E TOR UC 0.5 3.0 1.0 100 0.5 3.0 mA mA 20 IC=0.2A ; VCE=4V 2.5 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6129 2N6130 2N6131 NG S HA INC Fig.2 Outline dimensions(unindicated tolerance:A CON EMI TOR DUC 0.10 mm) 3 |
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