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| NST3946DP6T5G Dual Complementary General Purpose Transistor The NST3946DP6T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-963 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. Features http://onsemi.com (3) (2) (1) * * * * * * hFE, 100-300 Low VCE(sat), 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count This is a Pb-Free Device Rating Symbol VCEO VCBO VEBO IC HBM MM ESD Class Value 40 60 6.0 200 2 B Unit Vdc Vdc Vdc mAdc Q1 Q2 (4) (5) NST3946DP6T5G* *Q1 PNP Q2 NPN (6) MAXIMUM RATINGS Collector -Emitter Voltage Collector -Base Voltage Emitter-Base Voltage Collector Current - Continuous Electrostatic Discharge 6 5 4 1 2 3 THERMAL CHARACTERISTICS Characteristic (Single Heated) Total Device Dissipation TA = 25C Derate above 25C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation TA = 25C Derate above 25C (Note 2) Thermal Resistance, Junction-to-Ambient (Note 2) Characteristic (Dual Heated) (Note 3) Total Device Dissipation TA = 25C Derate above 25C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation TA = 25C Derate above 25C (Note 2) Thermal Resistance, Junction-to-Ambient (Note 2) Junction and Storage Temperature Range Symbol PD RqJA PD RqJA Symbol PD RqJA PD RqJA TJ, Tstg Max 240 1.9 520 280 2.2 446 Max 350 2.8 357 420 3.4 297 -55 to +150 Unit mW mW/C C/W mW mW/C C/W Unit mW mW/C C/W mW mW/C C/W C L M G SOT-963 CASE 527AD PLASTIC MARKING DIAGRAM L 1 Device NST3946DP6T5G MG G = Device Code (180 Clockwise Rotation) = Date Code = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping SOT-963 8000/Tape & Reel (Pb-Free) For information on tape and reel specifications, Stresses exceeding Maximum Ratings may damage the device. Maximum including part orientation and tape sizes, please Ratings are stress ratings only. Functional operation above the Recommended refer to our Tape and Reel Packaging Specifications Operating Conditions is not implied. Extended exposure to stresses above the Brochure, BRD8011/D. Recommended Operating Conditions may affect device reliability. 1. FR-4 @ 100 mm2, 1 oz. copper traces, still air. 2. FR-4 @ 500 mm2, 1 oz. copper traces, still air. 3. Dual heated values assume total power is sum of two equally powered channels 1 Publication Order Number: NST3946DP6/D (c) Semiconductor Components Industries, LLC, 2008 July, 2008 - Rev. 1 NST3946DP6T5G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (Note 4) (IC = 1.0 mAdc, IB = 0) (IC = -1.0 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = 10 mAdc, IE = 0) (IC = -10 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) (IE = -10 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = -30 Vdc, VEB = -3.0 Vdc) (NPN) (PNP) (NPN) (PNP) (NPN) (PNP) (NPN) (PNP) V(BR)CEO Vdc 40 -40 60 -40 6.0 -5.0 - - - - Vdc - - Vdc - - nAdc 50 -50 V(BR)CBO V(BR)EBO ICEX ON CHARACTERISTICS (Note 4) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) Collector -Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) Base -Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) 4. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. (NPN) hFE - 40 70 100 60 30 60 80 100 60 30 VCE(sat) - - - - VBE(sat) 0.65 - -0.65 - - - 300 - - - - 300 - - Vdc 0.2 0.3 -0.25 -0.4 Vdc 0.85 0.95 -0.85 -0.95 (PNP) (NPN) (PNP) (NPN) (PNP) http://onsemi.com 2 NST3946DP6T5G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k , f = 1.0 kHz) (VCE = -5.0 Vdc, IC = -100 mAdc, RS = 1.0 k , f = 1.0 kHz) (NPN) (PNP) (NPN) (PNP) (NPN) (PNP) (NPN) (PNP) fT MHz 200 250 - - - - - - - - pF 4.0 4.5 pF 8.0 10.0 dB 5.0 4.0 Cobo Cibo NF SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 3.0 Vdc, VBE = - 0.5 Vdc) (VCC = -3.0 Vdc, VBE = 0.5 Vdc) (IC = 10 mAdc, IB1 = 1.0 mAdc) (IC = -10 mAdc, IB1 = -1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc) (VCC = -3.0 Vdc, IC = -10 mAdc) (IB1 = IB2 = 1.0 mAdc) (IB1 = IB2 = -1.0 mAdc) (NPN) (PNP) (NPN) (PNP) (NPN) (PNP) (NPN) (PNP) td tr ts tf - - - - - - - - 35 35 35 35 275 250 50 50 ns ns NPN TRANSISTOR 0.28 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.23 0.18 0.13 0.08 0.03 25C -55C hFE, DC CURRENT GAIN (V) IC/IB = 10 VCE(sat) = 150C 400 350 150C (5.0 V) 300 150C (1.0 V) 250 200 25C (5.0 V) 25C (1.0 V) 150 -55C (5.0 V) 100 -55C (1.0 V) 50 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) 1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) 1 Figure 1. Collector Emitter Saturation Voltage vs. Collector Current Figure 2. DC Current Gain vs. Collector Current http://onsemi.com 3 NST3946DP6T5G NPN TRANSISTOR 1.1 VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 150C 0.3 0.0001 0.001 0.01 0.1 1 25C VBE(on), BASE-EMITTER TURN-ON VOLTAGE (V) IC/IB = 10 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 150C 0.3 0.0001 0.001 0.01 0.1 1 25C VCE = 2.0 V -55C -55C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current 2.0 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 20 mA 0.0001 0.001 Ib, BASE CURRENT (A) 0.01 40 mA 60 mA 80 mA IC = 100 mA Cibo, INPUT CAPACITANCE (pF) 1.8 8.0 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 0 Figure 4. Base Emitter Turn-On Voltage vs. Collector Current Cib 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Veb, EMITTER BASE VOLTAGE (V) Figure 5. Saturation Region 3.0 Cobo, OUTPUT CAPACITANCE (pF) 2.5 2.0 1.5 Cob 1.0 0.5 Figure 6. Input Capacitance 0 5.0 10 15 20 25 30 Vcb, COLLECTOR BASE VOLTAGE (V) Figure 7. Output Capacitance http://onsemi.com 4 NST3946DP6T5G PNP TRANSISTOR 0.40 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE(sat) = 150C hFE, DC CURRENT GAIN (V) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) 1 -55C 25C IC/IB = 10 350 300 250 200 150 100 50 0 0.0001 0.01 0.001 0.1 IC, COLLECTOR CURRENT (A) 1 150C (1.0 V) 25C (5.0 V) 25C (1.0 V) -55C (5.0 V) -55C (1.0 V) 150C (5.0 V) Figure 8. Collector Emitter Saturation Voltage vs. Collector Current Figure 9. DC Current Gain vs. Collector Current http://onsemi.com 5 NST3946DP6T5G PNP TRANSISTOR 1.1 VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 150C 0.3 0.0001 0.001 0.01 0.1 1 25C 1.1 VBE(on), BASE-EMITTER TURN-ON VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 150C 0.3 0.0001 0.001 0.01 0.1 1 25C IC/IB = 10 VCE = 2.0 V -55C -55C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 10. Base Emitter Saturation Voltage vs. Collector Current 1.0 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 20 mA IC = 10 mA 0.0001 0.001 Ib, BASE CURRENT (A) 0.01 100 mA Cibo, INPUT CAPACITANCE (pF) 80 mA 60 mA 40 mA 9.0 8.0 7.0 6.0 Figure 11. Base Emitter Turn-On Voltage vs. Collector Current Cib 5.0 4.0 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Veb, EMITTER BASE VOLTAGE (V) Figure 12. Saturation Region 6.0 Cobo, OUTPUT CAPACITANCE (pF) 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 Cob 0 5.0 10 15 20 25 Figure 13. Input Capacitance 30 Vcb, COLLECTOR BASE VOLTAGE (V) Figure 14. Output Capacitance http://onsemi.com 6 NST3946DP6T5G PACKAGE DIMENSIONS SOT-963 CASE 527AD-01 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b C D E e L HE MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.10 0.15 0.20 0.07 0.12 0.17 0.95 1.00 1.05 0.75 0.80 0.85 0.35 BSC 0.05 0.10 0.15 0.95 1.00 1.05 MIN 0.004 0.003 0.037 0.03 INCHES NOM MAX D A B 4 E 3 C 0.08 C A B A C L 6 5 12 e HE 6X b 0.006 0.008 0.005 0.007 0.039 0.041 0.032 0.034 0.014 BSC 0.002 0.004 0.006 0.037 0.039 0.041 SOLDERING FOOTPRINT* 0.35 0.014 0.35 0.014 0.90 0.0354 0.20 0.08 0.20 0.08 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 7 NST3946DP6/D |
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