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| VDS * * * * * * * *G P-TO220-3-31 1 2 3 Tjmax G FP G 2 G-TO220 G-TO220 G PG-TO262 G FP SP000216354 C3 TC TC tp VDD Tjmax Tjmax VDD EAR Tjmax Gate source voltage static Power dissipation, TC = 25C Reverse diode dv/dt 7) VGS VGS Ptot dv/dt 15 V/ns Rev.3.1 2009-02-19 V DS Tj RthJC RthJA wavesoldering V(BR)DSS V GS V GS , V DS Tj Tj V GS V GS Tj Tj VDS VGS V RG Rev.3.1 Page 2 2009-02-19 3 Transconductance Input capacitance Output capacitance Reverse transfer capacitance g fs Ciss Coss Crss V DS V GS f V DS V GS V DS Turn-on delay time td(on) V DD V GS Tj 5C RG Rise time Turn-off delay time Fall time tr td(off) tf Gate to source charge Gate to drain charge Qgs Qgd V DD V DD V GS V DD 0J-STD20 and JESD22 EAR f Coss Coss VDS VDS 7I <=I , di/dt<=400A/us, V SD D DClink=400V, Vpeak 9-02-19 TC Inverse diode direct current, pulsed I SM VGS Reverse recovery time Reverse recovery charge Peak reverse recovery current t rr Q rr I rrm VR diF/dt Tj I Rev.3.1. 9-02-19 3 TC Ptot TC Ptot Ptot TC TC VDS TC 10 2 TC A 10 1 ID 10 0 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 -2 0 10 10 1 10 2 10 V VDS 3 VDS Rev.3.1 09-02-19 tp tp tp tp VDS Tj VGS VDS Tj VGS VDS VDS Rev.3.1 9-02-19 f Tj VGS VGS Tj VGS VGS VGS Rev.3.1 9-02-19 3 Tj V DS VGS RG IF RG VDS VGS Tj di/dt RG V DS VGS Tj RG di/dt RG Rev.3.1 9-02-19 dv/dt RG VDS VGS Tj V DS VGS P Tj RG dv/dt RG RG VDS VGS P Tj Tj RG Rev.3.1 09-02-19 Tj VDD V(BR)DSS Tj Tj V(BR)DSS Tj f E AR VDS V GS f VDS Rev.3.1 9-02-19 Coss f VDS VDS Rev.3.1 9-02-19 SPP20N60C3 SPI20N60C3, SPA20N60C3 PG-TO220-3-1, PG-TO220-3-21 : Outline Rev.3.1 Page 12 2009-02-19 SPP20N60C3 SPI20N60C3, SPA20N60C3 PG-TO220-3-31/-3-111 Fully isolated package ( 2500 VAC; 1 minute ) Rev.3.1 Page 13 2009-02-19 SPP20N60C3 SPI20N60C3, SPA20N60C3 PG-TO262-3-1/PG-TO262-3-21 (I-PAK) Rev.3.1 Page 14 2009-02-19 SPP20N60C3 SPI20N60C3, SPA20N60C3 81726 Munchen Germany 2006 Rev.3.1 5 9-02-19 |
Price & Availability of SPP20N60C309
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