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| SBP13003-O High Voltage Fast-Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc*= 25 Total Dissipation at Ta* = 25 Operation Junction Temperature Storage Temperature tP = 5ms Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 1.5 3.0 0.75 1.5 40 1.25 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Thermal Characteristics Symbol RJc RJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.56 62.5 Units /W /W Jan 2009. Rev. 0 Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved. 1/5 SBP13003-O Electrical Characteristics (TC=25 unless otherwise noted) Symbol Value Parameter Test Conditions Min 400 Typ Max 0.5 1.0 3.0 Units VCEO(sus) Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0 Ic=0.5A,Ib=0.1A V VCE(sat) Collector-Emitter Saturation Voltage Ic=1.0A,Ib=0.25A Ic=1.5A,Ib=0.5A Tc=100 Ic=0.5A,Ib=0.1A V 1.0 1.2 V VBE(sat) Base-Emitter Saturation Voltage Ic=1.0A,Ib=0.25A Tc=100 ICBO Collector-Base Cutoff Current (Vbe=-1.5V) Vcb=700V Vcb=700V, Tc=100 - 1.0 5.0 40 40 4.0 0.3 mA hFE ts tf DC Current Gain IStorage Time Fall Time Vce=2V,Ic=0.5A Vce=2V, Ic=1.0A VCC=5V Ic=0.5A 10 5 - 1.2 0.12 Note: Pulse Test : Pulse width 300, Duty cycle 2% 2/5 . SBP13003-O Fig. 1 DC Current Gain Fig. 2 Saturation Voltage Fig. 3 Safe Operation Area Fig. 4 Power Derating 3/5 SBP13003-O Resistive Load Switching Test Circuit Inductive Load Switching & RBSOA Test Circuit 4/5 . SBP13003-O TO-220 Package Dimension 5/5 |
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