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PD - 95960 IRF9321PBF HEXFET(R) Power MOSFET VDS RDS(on) max (@VGS = -10V) -30 7.2 11.2 34 -15 V m m nC A 6 6 6 * ' ' ' ' RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25C) SO-8 Applications * Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Features Industry-Standard SO-8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen Resulting Benefits results in Multi-Vendor Compatibility Environmentally Friendlier Orderable part number IRF9321PBF IRF9321TRPbF Package Type SO8 SO8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Note Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Max. -30 20 -15 -12 -120 2.5 1.6 0.02 -55 to + 150 Units V f Power Dissipation f Power Dissipation c A W W/C C Linear Derating Factor Operating Junction and Storage Temperature Range Notes through are on page 2 www.irf.com 1 05/11/2010 IRF9321PBF Static @ TJ = 25C (unless otherwise specified) Parameter BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Min. -30 --- --- --- -1.3 --- --- --- --- --- 30 --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.021 5.9 9.3 -1.8 -5.9 --- --- --- --- --- 34 65 10 16 18 21 79 185 145 2590 590 360 Max. --- --- 7.2 11.2 -2.4 --- -1.0 -150 -100 100 --- --- 98 --- --- --- --- --- --- --- --- --- --- Typ. --- --- Units V V/C m V mV/C A nA S nC nC ns Conditions VGS = 0V, ID = -250A Reference to 25C, ID = -1mA VGS = -10V, ID = -15A VGS = -4.5V, ID = -12A VDS = VGS, ID = -50A VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VDS = -10V, ID = -12A VDS = -15V, VGS = -4.5V, ID = - 12A VGS = -10V VDS = -15V ID = -12A VDD = -30V, VGS = -4.5V ID = -1.0A RG = 6.8 See Figs. 19a & 19b VGS = 0V e e h Total Gate Charge h Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance h Gate-to-Drain Charge h Gate Resistance h Gate-to-Source Charge e Output Capacitance Reverse Transfer Capacitance Parameter pF VDS = -25V = 1.0MHz Max. 310 -12 Units mJ A Avalanche Characteristics EAS IAR Single Pulse Avalanche Energy Avalanche Current Diode Characteristics Parameter IS ISM VSD trr Qrr d Min. --- --- --- --- --- Typ. --- --- --- 38 24 Max. -2.5 Units A Conditions MOSFET symbol showing the integral reverse p-n junction diode. G S D Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -120 -1.2 57 36 Typ. --- --- V ns nC TJ = 25C, IS = -2.5A, VGS = 0V di/dt = 100/s Max. 20 50 e TJ = 25C, IF = -2.5A, VDD = -24V Thermal Resistance Parameter RJL RJA Junction-to-Drain Lead Junction-to-Ambient e f g Units C/W Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 4.3mH, RG = 25, IAS = -12A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. R is measured at TJ of approximately 90C. For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com IRF9321PBF 1000 TOP VGS -10V -5.0V -4.5V -4.0V -3.5V -3.0V -2.8V -2.5V 1000 TOP VGS -10V -5.0V -4.5V -4.0V -3.5V -3.0V -2.8V -2.5V -ID, Drain-to-Source Current (A) 100 10 BOTTOM -ID, Drain-to-Source Current (A) 100 BOTTOM 10 1 -2.5V -2.5V 1 60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 0.1 60s PULSE WIDTH Tj = 25C 0.01 0.1 1 10 100 -V DS, Drain-to-Source Voltage (V) -V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 RDS(on) , Drain-to-Source On Resistance (Normalized) Fig 2. Typical Output Characteristics 1.6 ID = -15A 1.4 VGS = -10V -I D, Drain-to-Source Current (A) 100 1.2 10 TJ = 150C 1 VDS = -10V 60s PULSE WIDTH 1 2 3 4 5 T J = 25C 1.0 0.8 0.1 0.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) -V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd Fig 4. Normalized On-Resistance vs. Temperature 14.0 ID= -12A -V GS, Gate-to-Source Voltage (V) 12.0 10.0 8.0 6.0 4.0 2.0 0.0 C, Capacitance (pF) VDS= -24V VDS= -15V 10000 Ciss Coss 1000 Crss VDS= -6.0V 100 1 10 -VDS, Drain-to-Source Voltage (V) 100 0 25 50 75 100 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage www.irf.com 3 IRF9321PBF 1000 1000 -I D, Drain-to-Source Current (A) -I SD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec 1msec 100 100 T J = 150C 10 DC 1 T A = 25C 0.1 Tj = 150C Single Pulse 0.01 0.1 10msec 10 T J = 25C VGS = 0V 1.0 0.3 0.5 0.7 0.9 1.1 1.3 -V SD, Source-to-Drain Voltage (V) 1 10 100 -VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 15 -V GS(th), Gate threshold Voltage (V) Fig 8. Maximum Safe Operating Area 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 ID = -50A -I D, Drain Current (A) 10 5 0 25 50 75 100 125 150 T A , Ambient Temperature (C) -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 9. Maximum Drain Current vs. Ambient Temperature 100 Thermal Response ( Z thJA ) C/W Fig 10. Threshold Voltage vs. Temperature D = 0.50 10 0.20 0.10 0.05 0.02 0.01 1 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 0.001 0.01 0.1 1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 10 100 1000 0.001 1E-006 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com IRF9321PBF 18 16 14 12 10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 20 T J = 25C T J = 125C ID = -15A RDS(on), Drain-to -Source On Resistance ( m) RDS(on), Drain-to -Source On Resistance (m ) 20 60 50 40 Vgs = -4.5V 30 20 10 0 0 20 40 60 80 100 120 -I D, Drain Current (A) Vgs = -10V Fig 12. On-Resistance vs. Gate Voltage 1400 EAS , Single Pulse Avalanche Energy (mJ) -V GS, Gate -to -Source Voltage (V) Fig 13. Typical On-Resistance vs. Drain Current 1000 1200 1000 800 600 400 200 0 25 50 75 Single Pulse Power (W) ID TOP -1.4A -2.2A BOTTOM -12A 800 600 400 200 100 125 150 0 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 Starting T J , Junction Temperature (C) Time (sec) Fig 14. Maximum Avalanche Energy vs. Drain Current Fig 15. Typical Power vs. Time D.U.T * Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt - + RG * * * * di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Body Diode Forward Drop Inductor Curent Inductor Current Ripple 5% ISD * Reverse Polarity of D.U.T for P-Channel * VGS = 5V for Logic Level Devices www.irf.com Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET(R) Power MOSFETs 5 IRF9321PBF Id Vds Vgs L 0 DUT 20K 1K S S VCC Vgs(th) Qgodr Qgd Qgs2 Qgs1 Fig 17a. Gate Charge Test Circuit Fig 17b. Gate Charge Waveform VDS L I AS RG -V GS -20V D.U.T IAS DRIVER 0.01 VDD A tp tp V(BR)DSS 15V Fig 18a. Unclamped Inductive Test Circuit Fig 18b. Unclamped Inductive Waveforms VDS VGS RG RD td(on) tr t d(off) tf D.U.T. VGS 10% + -VGS Pulse Width 1 s Duty Factor 0.1 % Fig 19a. Switching Time Test Circuit 6 - V DD 90% VDS Fig 19b. Switching Time Waveforms www.irf.com IRF9321PBF SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) 9 6 ' & ! % " $ 7 9DH 6 6 i p 9 @ r r C F G % @ $ # C !$Ab dA 6 %Y r DI8C@T HDI H6Y $"! %'' # (' " ! &$ (' '( (%' #(& $ $AA76TD8 !$AA76TD8 !!'# !## (( (% % $ A A' HDGGDH@U@ST HDI H6Y &$ "$ !$ $ "" ( !$ $ #' # "' !&AA76TD8 %"$AA76TD8 %! $' $ !$ !& # A A' r 6 FAA#$ 8 Ab#dA 'YAG & 'YAp 'YAi !$Ab dA 6 867 APPUQSDIU IPU@T) AA9DH@ITDPIDIBAEAUPG@S6I8DIBAQ@SA6TH@A #$H ((# !AA8PIUSPGGDIBA9DH@ITDPI)AHDGGDH@U@S "AA9DH@ITDPITA6S@ATCPXIADIAHDGGDH@U@STAbDI8C@Td #AAPVUGDI@A8PIAPSHTAUPAE@9@8APVUGDI@AHT !66 $AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A $Ab%d %AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A!$Ab d &AAA9DH@ITDPIADTAUC@AG@IBUCAPAAG@69AAPSATPG9@SDIBAUP AAAAA6ATV7TUS6U@ 'YA&!Ab!'d %#%Ab!$$d "YA !&Ab$d 'YA &'Ab&d SO-8 Part Marking Information @Y6HQG@)AUCDTADTA6IADSA& AHPTA@U 96U@A8P9@AXX QA2A9DTBI6U@TAG@69AAAS@@ QSP9V8UAPQUDPI6G A2AG6TUA9DBDUAPAAUC@A@6S XXA2AX@@F 6A2A6TT@H7GATDU@A8P9@ GPUA8P9@ Q6SUAIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP ;;;; ) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 7 IRF9321PBF SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Qualification Information Qualification level Consumer (per JEDEC JESD47F guidelines) SO-8 Yes MSL1 (per JEDEC J-STD-020D) Moisture Sensitivity Level RoHS Compliant Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/2010 8 www.irf.com |
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