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| SML2955CSM4 MECHANICAL DATA Dimensions in mm (inches) P-CHANNEL ENHANCEMENT MODE MOSFET 1.40 0.15 (0.055 0.006) 0.25 0.03 (0.01 0.001) 5.59 0.13 (0.22 0.005) FEATURES * BVDSS =-60V * ID = -2.5A 0.23 min. (0.009) 0.64 0.08 (0.025 0.003) 0.23 rad. (0.009) 3 2 1.27 0.05 (0.05 0.002) 3.81 0.13 (0.15 0.005) 4 1 * RDS(ON) = 0.3 * Hermetic Surface Mount Package * Screening Option Available 1.02 0.20 (0.04 0.008) 2.03 0.20 (0.08 0.008) LCC3 PACKAGE (MO-041BA) Underside View PAD 1 - Drain PAD 2 - N/C PAD 3 - Source PAD 4 - Gate The SML2955CSM4 is a very low on state resistance P-Channel enhancement mode mosfet in a Ceramic Surface Mount package designed for high rel applications: ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VDS VGS ID IDM PD RJA TSTG , TJ NOTE: 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Drain - Source Voltage Gate - Source Voltage Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @TA = 25C @TA = 25C @TA = 100C Thermal Resistance Junction to Ambient Maximum Junction and Storage Temperature Range -60V 20V -2.5A -15A 0.8W 0.32W 156C/W -55 to +150C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5878 Issue 1 SML2955CSM4 ELECTRICAL RATINGS (TA = 25C unless otherwise stated) Characteristic STATIC CHARACTERISTICS V(BR)DSS Drain - Source Breakdown Voltage VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs V Gate Threshold Voltage1 Gate - Source Leakage Current Zero Gate Voltage Drain Current On State Drain Current 1 Drain Source On-State Resistance 1 Forward Transconductance 1 Diode Forward Voltage1 DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Input capacitance Output capacitance Reverse transfer capacitance SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDS = -30V VGS = 0V f = 1.0MHz 601 85 35 11 2.4 2.7 VDD = -30V RGEN = 6 12 10 19 6 21 20 34 12 ns 15 nC pF Test Conditions VGS = 0V VDS = VGS VGS = 20V VDS = -60V VDS = -5.0V ID = -2.0A ID = -2.5A VGS = -10V VGS = 0V ID = -250A ID = -250A VGS = 0V VGS = 0V VGS = -10V VGS = -4.5V VGS = -10V TJ = 125C ID = -2.5A ID = -2.5A 5.5 -0.8 -1.2 -12 0.55 0.35 0.55 S V Min. -60 -2.0 -2.6 -4.0 Typ. Max. Unit V nA A A 100 -10 SD VDS = -30V VGS = -10V ID =-1.0A VGS = -10V ID = -2.5A NOTES: 1) Pulse Test: Pulse Width = 300s , Duty Cycle 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5878 Issue 1 |
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