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APTC90TAM60TPG
Triple phase leg Super Junction MOSFET Power Module VDSS = 900V RDSon = 60m max @ Tj = 25C ID = 59A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Internal thermistor for temperature monitoring
* * * *
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTC90TAM60TPG - Rev 0
Benefits * Outstanding performance at high frequency operation VBUS 1 VBUS 2 VBUS 3 * Direct mounting to heatsink (isolated package) G1 G3 G5 * Low junction to case thermal resistance S1 S3 S5 0/VBUS 2 0/VBUS 3 0/VBUS 1 * Solderable terminals both for power and signal for S6 S4 S2 easy PCB mounting G6 G4 G2 * Very low (12mm) profile * Each leg can be easily paralleled to achieve a phase U V W leg of three times the current capability * Module can be configured as a three phase bridge * Module can be configured as a boost followed by a full bridge * RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 900 V Tc = 25C 59 ID Continuous Drain Current A Tc = 80C 44 IDM Pulsed Drain current 150 VGS Gate - Source Voltage 20 V RDSon Drain - Source ON Resistance 60 m PD Maximum Power Dissipation Tc = 25C 462 W IAR Avalanche current (repetitive and non repetitive) 8.8 A EAR Repetitive Avalanche Energy 2.9 mJ EAS Single Pulse Avalanche Energy 1940
NTC1 NTC2
August, 2009
APTC90TAM60TPG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 900V VGS = 0V,VDS = 900V
Min Tj = 25C Tj = 125C 2.5
Typ 1000 50 3
Max 200 60 3.5 200
Unit A m V nA
VGS = 10V, ID = 52A VGS = VDS, ID = 6mA VGS = 20 V, VDS = 0V
Dynamic Characteristics
Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 100V f = 1MHz VGS = 10V VBus = 400V ID = 52A Inductive Switching (125C) VGS = 10V VBus = 600V ID = 52A RG = 3.8 Inductive switching @ 25C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8 Inductive switching @ 125C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8 Min Typ 13.6 0.66 540 64 230 70 20 400 25 3 1.5 4.2 1.7 mJ ns nC Max Unit nF
mJ
Source - Drain diode ratings and characteristics
Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25C Tc = 80C VGS = 0V, IS = - 52A IS = - 52A Tj = 25C VR = 400V Tj = 25C diS/dt = 200A/s 0.8 920 60 Min Typ Max 59 44 1.2 Unit A V ns C
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APTC90TAM60TPG
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 4000 -40 -40 -40 3
Typ
Max 0.27 150 125 100 5 250
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M6
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 5 3952 4
Max
Unit k % K %
SP6-P Package outline (dimensions in mm)
9 places (3:1)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
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APTC90TAM60TPG - Rev 0
August, 2009
APTC90TAM60TPG
Typical Performance Curve
0.3 Thermal Impedance (C/W) 0.25 0.2 0.15 0.1 0.05 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9 0.7 0.5 0.3 0.1 0.05
Single Pulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics
VGS=20, 8V
160
6V
BVDSS, Drain to Source Breakdown Voltage
240 ID, Drain Current (A)
Breakdown Voltage vs Temperature 1000 975 950 925 900 25 50 75 100 125 TJ, Junction Temperature (C) DC Drain Current vs Case Temperature 60 ID, DC Drain Current (A) 50 40 30 20 10 0
5V
80
0 0 5 10 15 VDS, Drain to Source Voltage (V) Maximum Safe Operating Area 1000 ID, Drain Current (A) 20
100
limited by RDSon
100 s
10
Single pulse TJ=150C TC=25C 1 10 100
10 ms
1 1000 VDS, Drain to Source Voltage (V) Capacitance vs Drain to Source Voltage Ciss C, Capacitance (pF) 10000 1000 100 10 1 0 25 50 75 100 125 150 175 200 VDS, Drain to Source Voltage (V) Crss Coss VGS, Gate to Source Voltage (V) 100000 10 8 6 4 2 0
25
50 75 100 125 TC, Case Temperature (C)
150
Gate Charge vs Gate to Source Voltage VDS=400V ID=52A TJ=25C
0
100
200 300 400 Gate Charge (nC)
500
600
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APTC90TAM60TPG - Rev 0
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APTC90TAM60TPG
400
ZVS
RDS(on), Drain to Source ON resistance (Normalized)
Operating Frequency vs Drain Current
VDS=600V D=50% RG=3.8 TJ=125C TC=75C
ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 25 50 75 100 125 150 TJ, Junction Temperature (C) Switching Energy vs Gate Resistance
Frequency (kHz)
300 200
Hard switching
100 0 20 25
ZCS
30
35
40
45
50
ID, Drain Current (A)
Switching Energy vs Current 8 Eon and Eoff (mJ) 6 4
Eoff VDS=600V RG=3.8 TJ=125C L=100H
7 Switching Energy (mJ) 6 5 4 3 2 1 0 0 5 10
VDS=600V ID=52A TJ=125C L=100H Eon Eoff
Eon
2 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80
15
20
Gate Resistance (Ohms)
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG".
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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Microsemi reserves the right to change, without notice, the specifications and information contained herein
August, 2009

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