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| SMD Type Complementary 20-V (D-S) MOSFET KI1551DL Transistors IC SOT-363 +0.1 1.3-0.1 0.65 Unit: mm PIN Configuration +0.15 2.3-0.15 0.525 0.36 Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 85 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 85 Operating Junction and Storage Temperature Range *Surface Mounted on 1" X 1" FR4 Board. TJ, Tstg IDM IS PD 0.25 0.3 0.16 Symbol VDS VGS ID 0.3 0.22 0.6 0.23 0.27 0.14 -0.25 0.3 0.16 -55 to 150 0.29 0.21 N-Channel 5 secs Steady State 20 12 -0.44 -0.31 -1 -0.23 0.27 0.14 -0.41 -0.3 P-Channel 5 secs Steady State -20 V V A A A A W W Unit Thermal Resistance Ratings TA = 25 Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Foot (Drain) *Surface Mounted on 1" X 1" FR4 Board. t 5 sec Symbol RthJA RthJF Typical 360 400 300 Maximum 415 460 350 /W Unit Steady State Steady State +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 +0.1 1.25-0.1 www.kexin.com.cn 1 SMD Type KI1551DL Electrical Characteristics TJ = 25 Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 12V VDS = 16 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85 VDS = -16 V, VGS = 0 V, TJ = 85 On State Drain Currenta ID(on) VDS VDS 5 V, VGS = 4.5 V -5 V, VGS = -4.5 V A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel VDS = -10 V, VGS = -4.5 V, ID = 0.41A N Channel VDD = 10 V, RL = 20 ID= 0.5 A, VGEN = 4.5V, Rg = 6 P-Channel VDD = -10 V, RL = 20 ID= -0.5 A, VGEN = -4.5 V, Rg = 6 IF = 0.23 A, di/dt = 100 A/ IF = -0.23 A, di/dt = 100 A/ s s P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.6 -1.0 Min 0.6 -0.6 Transistors IC Typ Max Unit V 100 100 1 -1 5 -5 A A 1.55 2.8 1.23 3.0 1.4 0.3 0.8 0.8 -0.8 0.72 0.52 0.22 0.11 0.13 0.14 23 7.5 30 20 10 8.5 15 12 20 25 40 15 60 40 20 17 30 24 40 40 ns 1.2 -1.2 1.5 1.8 pC 1.9 3.7 1.600 4.2 1.800 mS V nA VGS = 4.5 V, ID = 0.29A VGS = -4.5 V, ID = -0.41A Drain Source On State Resistance* rDS(on) VGS = 2.7 V, ID = 0.1A VGS = -2.7 V, ID = -0.25A VGS = 2.5 V, ID = 0.1A VGS = -2.5 V, ID = -0.25A Forward Transconductance* Diode Forward Voltage* Total Gate Charge Gate Source Charge Gate Drain Charge Turn On Time Rise Time Turn Off Delay Time Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width gfs VSD Qg Qgs Qgd td(on) tr td( off) tf trr VDS = 10 V, ID = 0.29A VDS = -10 V, ID = - 0.41A IS = 0.23A, VGS = 0 V IS = -0.23A, VGS = 0 V N-Channel VDS = 10 V, VGS = 4.5 V, ID = 0.29A 0.850 0.995 300 s, duty cycle 2%. 2 www.kexin.com.cn |
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