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| FS100KMJ-03F High-Speed Switching Use Nch Power MOS FET REJ03G0253-0100 Rev.1.00 Aug.20.2004 Features * * * * * Drive voltage : 4 V VDSS : 30 V rDS(ON) (max) : 4.0 m ID : 100 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 80 ns Outline TO-220FN 2 1 1. Gate 2. Drain 3. Source 1 2 3 3 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso -- Ratings 30 20 100 400 100 100 400 30 - 55 to +150 - 55 to +150 2000 2.0 Unit V V A A A A A W C C V g Conditions VGS = 0 V VDS = 0 V L = 10 H AC 1 minute, Terminal to case Typical value Rev.1.00, Aug.20.2004, page 1 of 6 FS100KMJ-03F Electrical Characteristics (Tch = 25C) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Drain-source leakage current Gate-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(th) rDS(ON) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) trr Min. 30 20 -- -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 1.5 3.1 4.2 0.16 120 7600 2300 1000 30 170 520 290 1.0 -- 80 Max. -- -- 100 10 2.0 4.0 5.7 0.20 -- -- -- -- -- -- -- -- 1.5 4.17 -- Unit V V A A V m m V S pF pF pF ns ns ns ns V C/W ns Test conditions ID = 1 mA, VGS = 0 V IG = 100 A, VDS = 0 V VDS = 30 V, VGS = 0 V VGS = 20 V, VDS = 0 V ID = 1 mA, VDS = 10 V ID = 50 A, VGS = 10 V ID = 50 A, VGS = 4 V ID = 50 A, VGS = 10 V ID = 50 A, VDS = 10 V VDS = 10 V, VGS = 0 V, f = 1MHz VDD = 15 V, ID = 50 A, VGS = 10 V, RGEN = RGS = 50 IS = 50 A, VGS = 0 V Channel to case IS = 50 A, dis/dt = - 50 A/s Rev.1.00, Aug.20.2004, page 2 of 6 FS100KMJ-03F Performance Curves Drain Power Dissipation Derating Curve 50 Maximum Safe Operating Area 5 3 2 tw = 10s 100s 1ms 10ms 100ms Drain Power Dissipation PD (W) 30 20 10 0 0 Drain Current ID (A) 40 10 7 5 3 2 10 7 5 3 2 2 1 50 100 150 200 10 7 Tc = 25C 5 Single Pulse 3 0 2 3 5 710 2 3 0 DC 5 7 10 1 23 57 Case Temperature Tc (C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) 100 80 60 3V VGS = 10V 6V 5V 4V Output Characteristics (Typical) 50 40 30 20 10 Tc = 25C Pulse Test VGS = 10V 6V 5V 4V 3V Drain Current ID (A) 40 PD = 30W 20 Tc = 25C Pulse Test Drain Current ID (A) 0 0 0.2 0.4 0.6 0.8 1.0 0 0 0.1 0.2 0.3 0.4 0.5 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Drain-Source On-State Resistance rDS(ON) (m) Drain-Source On-State Voltage VDS(ON) (V) On-State Voltage vs. Gate-Source Voltage (Typical) 1.0 0.8 0.6 0.4 0.2 50A Tc = 25C Pulse Test On-State Resistance vs. Drain Current (Typical) 10 Tc = 25C Pulse Test 8 6 4 2 00 1 2 3 10 2 3 5 710 2 3 5 710 2 3 5 710 VGS = 4V 10V ID = 100A 70A 0 0 2 4 6 8 10 Gate-Source Voltage VGS (V) Drain Current ID (A) Rev.1.00, Aug.20.2004, page 3 of 6 FS100KMJ-03F Forward Transfer Admittance vs. Drain Current (Typical) Forward Transfer Admittance | yfs | (S) 103 7 5 3 2 10 7 5 3 2 101 7 5 3 2 100 0 10 23 5 7 101 23 5 7 102 2 Transfer Characteristics (Typical) 100 80 60 40 20 0 0 Tc = 25C VDS = 10V Pulse Test VDS = 10V Pulse Test Tc = 25C Drain Current ID (A) 75C 125C 2 4 6 8 10 Gate-Source Voltage VGS (V) Capacitance vs. Drain-Source Voltage (Typical) 104 7 5 103 7 5 Drain Current ID (A) Switching Characteristics (Typical) td(off) tf Ciss Capacitance (pF) 3 2 103 7 5 3 Tch = 25C 2 f = 1MHz Switching Time (ns) Coss Crss 3 2 tr 102 7 5 td(on) 3 2 Tch = 25C, V = 15V DD 101 0 10 VGS = 10V, RGEN = RGS = 50 102 -1 0 1 2 10 2 3 5 710 2 3 5 710 2 3 5 710 VGS = 0V 23 5 7 10 1 23 5 7 10 2 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) 10 Tch = 25C ID = 100A Source-Drain Diode Forward Characteristics (Typical) 100 80 60 40 25C VGS = 0V Pulse Test Tc = 125C Gate-Source Voltage VGS (V) 6 4 2 0 0 Source Current IS (A) 8 VDS = 15V 20V 25V 75C 20 0 0 40 80 120 160 200 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nC) Source-Drain Voltage VSD (V) Rev.1.00, Aug.20.2004, page 4 of 6 FS100KMJ-03F On-State Resistance vs. Channel Temperature (Typical) 10 7 VGS = 10V ID = 50A 5 Pulse Test 3 2 100 7 5 3 2 10-1 -50 0 50 100 150 1 Drain-Source On-State Resistance rDS(ON) (25C) Drain-Source On-State Resistance rDS(ON) (tC) Gate-Source Threshold Voltage VGS(th) (V) Threshold Voltage vs. Channel Temperature (Typical) 4.0 3.2 2.4 1.6 0.8 0 VDS = 10V ID = 1mA -50 0 50 100 150 Channel Temperature Tch (C) Channel Temperature Tch (C) Drain-Source Breakdown Voltage V(BR)DSS (tC) Drain-Source Breakdown Voltage V(BR)DSS (25C) Transient Thermal Impedance Zth(ch-c) (C/W) Breakdown Voltage vs. Channel Temperature (Typical) 1.4 1.2 1.0 0.8 0.6 0.4 VGS = 0V ID = 1mA Transient Thermal Impedance Characteristics 10 7 D = 1.0 5 3 0.5 2 100 7 5 3 2 10-1 7 5 3 2 0.2 0.1 0.05 0.02 PDM 1 0.01 Single Pulse tw T -50 0 50 100 150 10-2 -4 -3 -2 -1 0 1 2 10 2 3 5 7 10 2 3 5 7 10 2 3 5 7 10 2 3 5 710 2 3 5 7 10 2 3 5 710 D = tw T Channel Temperature Tch (C) Pulse Width tw (s) Switching Time Measurement Circuit Vin Monitor D.U.T. RL Vin Vout RGS VDD Vout Monitor Switching Waveform 90% RGEN 10% 10% 10% 90% td(on) tr 90% td(off) tf Rev.1.00, Aug.20.2004, page 5 of 6 FS100KMJ-03F Package Dimensions TO-220FN EIAJ Package Code JEDEC Code Mass (g) (reference value) 2.0 Lead Material Cu alloy 10 0.3 2.8 0.2 15 0.3 3 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 6.5 0.3 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 Symbol A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Standard order code example FS100KMJ-03F FS100KMJ-03F-A8 Straight type Plastic Magazine (Tube) 50 Type name Lead form Plastic Magazine (Tube) 50 Type name - Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 6 of 6 2.6 0.2 Dimension in Millimeters Min Typ Max Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. 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