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MITSUBISHI IGBT MODULES
CM450DX-24A
HIGH POWER SWITCHING USE
CM450DX-24A
IC ................................................................... 450A VCES ......................................................... 1200V Dual Flatbase Type / Insulated Package / Copper (non-plating) base plate RoHS Directive compliant
APPLICATION General purpose Inverters, Servo Amplifiers, Power supply, etc.
OUTLINE DRAWING & CIRCUIT DIAGRAM
152 137 121.7 110 0.5 99 94.5
Dimensions in mm
(13.5)
(4.2)
(13.5) 4-M6 NUTS
(20.5) 17
0.8
7
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
58.4 (14) (14) 22 17 17 12 12 6 6
47
24
48
23
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
39 50 0.5 57.5 62
6.5 (21.14)
0 (7.75)
A
95 (102.25) 41.66 45.48 68.34 72.14 15 18.8
4-5.5 MOUNTING HOLES
(3) 13
3.5
LABEL
(5.4) 12.5 (SCREWING DEPTH) 17 +1 -0.5
E2(39) G2(38) Tr2
CIRCUIT DIAGRAM
4.3
1.5
(7.4) 1.2
12.5
2.5 2.1
Division of Dimension 0.5 over over over 3 6 30 to to to to to 3 6 30 120 400
Tolerance 0.2 0.3 0.5 0.8 1.2
0.5
E2(47) Di2 C1(48)
(3.81)
1.15 0.65
E1C2 (24)
Di1 Tr1 Th
NTC
E1C2 (23)
TERMINAL t = 0.8 (S = 3/1)
SECTION A (S = 3/1)
over 120
Pin positions with tolerance
G1(15) TH1(1) TH2(2) E1(16)
C1(22)
Jul. 2009
MITSUBISHI IGBT MODULES
CM450DX-24A
HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS INVERTER PART
Symbol VCES VGES IC ICRM PC IE (Note.3) IERM (Note.3) Tj Tstg Viso -- -- -- -- Parameter Collector-emitter voltage Gate-emitter voltage
(Tj = 25C, unless otherwise specified)
Conditions G-E Short C-E Short (Note. 1) DC, TC = 90C Collector current (Note. 4) Pulse (Note. 1, 5) Maximum collector dissipation TC = 25C (Note. 1, 5) Emitter current TC = 25C (Note. 4) (Free wheeling diode forward current) Pulse Junction temperature Storage temperature Isolation voltage Terminals to base plate, f = 60Hz, AC 1 minute (Note. 8) Base plate flatness On the centerline X, Y Torque strength Main terminals M6 screw Torque strength Mounting M5 screw Weight (Typical)
Rating 1200 20 450 900 2840 450 900 -40 ~ +150 -40 ~ +125 2500 0 ~ +100 3.5 ~ 4.5 2.5 ~ 3.5 330
Unit V A W A C Vrms m N*m g
Note. 8: Base plate flatness measurement point is as in the following figure.
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-
-
Jul. 2009 2
MITSUBISHI IGBT MODULES
CM450DX-24A
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS INVERTER PART
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note.3) Qrr (Note.3) Parameter
(Tj = 25C, unless otherwise specified)
Conditions
VCE = VCES, VGE = 0V Collector cutoff current Gate-emitter threshold voltage IC = 45mA, VCE = 10V Gate leakage current VGE = VGES, VCE = 0V Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge IC = 450A, VGE = 15V IC = 450A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 450A, VGE = 15V VCC = 600V, IC = 450A VGE = 15V, RG = 0.68 Inductive load (Note. 6) Tj = 25C Tj = 125C Chip
(IE = 450A) (Note. 6)
VEC(Note.3) Emitter-collector voltage Rlead Rth(j-c)Q Rth(j-c)R Rth(c-f) RGint RG
IE = 450A, VGE = 0V IE = 450A, VGE = 0V, chip Module lead resistance Main terminals-chip, per switch Thermal resistance per IGBT (Junction to case) (Note. 1) per free wheeling diode Contact thermal resistance Thermal grease applied (Case to heat sink) (Note. 1) per 1 module Internal gate resistance External gate resistance per switch
Min. -- 6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 1.4 2.8 0.68
Limits Typ. -- 7 -- 2.0 2.2 1.9 -- -- -- 2000 -- -- -- -- -- 14 2.6 2.5 0.8 -- -- 0.015 2.0 3.0 --
Max. 1 8 0.5 2.6 -- -- 68 5.9 1.4 -- 650 250 700 600 250 -- 3.4 -- -- 0.044 0.078 -- 2.6 5.2 6.8
Unit mA V A V
nF nC
ns
C V m
K/W
(Note. 2) TC = 25C TC = 125C
NTC THERMISTOR PART
Symbol R R/R B(25/50) P25
Note.1: 2: 3: 4: 5: 6:
Parameter Zero power resistance Deviation of resistance B constant Power dissipation
Conditions TC = 25C TC = 100C, R100 = 493 Approximate by equation TC = 25C
(Note. 7)
Min. 4.85 -7.3 -- --
Limits Typ. 5.00 -- 3375 --
Max. 5.15 +7.8 -- 10
Unit k % K mW
Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.) Typical value is measured by using thermally conductive grease of = 0.9W/(m*K). Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for VCE(sat) and VEC) 1 7: B(25/50) = In( R25 )/( 1 ) R50 T25 T50 R25: resistance at absolute temperature T25 [K]; T25 = 25 [C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]; T50 = 50 [C]+273.15 = 323.15 [K]
Jul. 2009 3
MITSUBISHI IGBT MODULES
CM450DX-24A
HIGH POWER SWITCHING USE
Chip Location (Top view)
Dimensions in mm (Tolerance: 1mm)
(152)
(121.7) (110) 0
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
0
47
24
(62)
(50)
28.2 42.0 51.6
48
Tr2 Di 2 Di 1 Th
1 2 3 4 5 6 7
Tr2
Di 2
Tr2 Di 2 Tr1
23
26.6
Tr1 Di 1
8
Tr1 Di 1
43.9
9 10 11 12 13 14 15 16 17 18 19 20 21 22
0
22.7 26.9
35.9
49.1
72.7
85.9
99.1
LABEL SIDE
Each mark points the center position of each chip. Tr1/Tr2: IGBT, Di1/Di2: FWDi, Th: NTC thermistor
Jul. 2009 4
MITSUBISHI IGBT MODULES
CM450DX-24A
HIGH POWER SWITCHING USE
C1
C1(C1s) C1(C1s)
C1 IC VGE = 0V
G1 E1(E1s)
V
VGE = 15V
G1 E1(E1s)
E1C2 VGE = 0V
G2 E2(E2s)
E1C2 VGE = 15V
G2 E2(E2s)
IC E2 Tr2
V
E2 Tr1
VCE(sat) test circuit
C1
C1(C1s) C1(C1s)
C1 IE VGE = 0V
G1 E1(E1s)
V
VGE = 0V
G1 E1(E1s)
E1C2 VGE = 0V
G2 E2(E2s)
E1C2 VGE = 0V
G2 E2(E2s)
IE E2 Di2
V
E2 Di1
VEC test circuit
Arm
IE 0V Load
VGE
90% 0% t
IE trr
-VGE + VCC IC 90% +VGE 0V -VGE 0A t
RG VGE
VCE IC 0A td(on) tr td(off) tf Irr 10% t
1/2 Irr Qrr = 1/2 Irr trr
Switching time test circuit and waveforms
trr, Qrr test waveform
Jul. 2009 5
MITSUBISHI IGBT MODULES
CM450DX-24A
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part
COLLECTOR CURRENT IC (A)
VGE = 800 20V 700 600 500 400 300 200 100 0 0 1 2 3
15
Tj = 25C 13
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
900
4 VGE = 15V 3.5 3 2.5 2 1.5 1 0.5 0 Tj = 25C Tj = 125C 0 100 200 300 400 500 600 700 800 900 COLLECTOR CURRENT IC (A)
12
11 10 9 4 5 6 7 8 9 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part
FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) Inverter part 103
7 5 3 2
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
10
Tj = 25C
8
6 IC = 450A IC = 900A 2 IC = 180A 0 6 8 10 12 14 16 18 20
EMITTER CURRENT IE (A)
102
7 5 3 2
4
101
0
0.5
1
1.5
2
Tj = 25C Tj = 125C 2.5 3 3.5 4
GATE-EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE CHARACTERISTICS (TYPICAL) Inverter part 103
7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 103
7 5 3 2
td(off) td(on) tf
CAPACITANCE (nF)
102
Cies Coes
SWITCHING TIME (ns)
102
7 5 3 2
101
tr Conditions: VCC = 600V VGE = 15V RG = 0.68 Tj = 125C Inductive load
2 3 5 7 102 2 3 5 7 103
101
7 5 3 2
100
Cres
VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V)
100 1 10
COLLECTOR CURRENT IC (A)
Jul. 2009 6
MITSUBISHI IGBT MODULES
CM450DX-24A
HIGH POWER SWITCHING USE
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 103
7 5
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 102
7
td(on)
SWITCHING LOSS (mJ/pulse)
td(off)
5 3 2
SWITCHING TIME (ns)
3 2
tf tr
Err Eoff
102
7 5 3 2
101
7 5 3 2
101 -1 10
Conditions: VCC = 600V VGE = 15V IC = 450A Tj = 125C Inductive load
2 3 5 7 100 2 3 5 7 101
Eon
100 1 10
Conditions: VCC = 600V VGE = 15V RG = 0.68 Tj = 125C Inductive load
5 7 102 2 3 5 7 103
2
3
GATE RESISTANCE RG ()
COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) REVERSE RECOVERY CHARACTERISTICS OF FREE WHEELING DIODE (TYPICAL) Inverter part 103
7 5 3 2 7 5 3 2
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 103
7 5 3 2 7 5 3 2
SWITCHING LOSS (mJ/pulse)
Eon Eoff Err Conditions: VCC = 600V VGE = 15V IC, IE = 450A Tj = 125C Inductive load
2 3 5 7 100 2 3 5 7 101
lrr (A), trr (ns)
102
102
Irr trr
101
7 5 3 2
101
7 5 3 2
100 -1 10
100 1 10
Conditions: VCC = 600V VGE = 15V RG = 0.68 Tj = 25C Inductive load
2 3 5 7 102 2 3 5 7 103
GATE RESISTANCE RG ()
EMITTER CURRENT IE (A)
GATE CHARGE CHARACTERISTICS (TYPICAL) Inverter part 20
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 100
GATE-EMITTER VOLTAGE VGE (V)
IC = 450A
15
VCC = 600V
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c)
VCC = 400V
7 Single pulse 5 TC = 25C 3 2 7 5 3 2
10-1
10
10-2
7 5 3 2
5
0
0
500
1000 1500 2000 2500 3000
10-3
Inverter IGBT part : Per unit base = Rth(j-c) = 0.044K/W Inverter FWDi part : Per unit base = Rth(j-c) = 0.078K/W
10-52 3 5710-42 3 5710-32 3 5710-22 3 5710-12 3 57100 2 3 57101 TIME (s)
GATE CHARGE QG (nC)
Jul. 2009 7

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