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SMD-Photodiode
28.01.2008 Wavelength Infrared Type SMD Technology GaAs
EPD-880-1-0.9-1
rev. 01 Case SMD 1206
Description
Selective photodiode with narrow bandwidth and high spectral sensitivity in the infrared range (810...950 nm). Compact design in standard SMD package allows for easy circuit board mounting and assembling of arrays.
Applications
Alarm systems, light barriers, special sensors
Miscellaneous Parameters
Tamb = 25 unless otherwise specified C, Parameter Active area Temperature coefficient of ID Operating temperature range Storage temperature range Test onditions Symbol A TCID Tamb Tstg Value 0.62 5 -20 to +85 -40 to +125 Unit mm %/K C C
Optical and Electrical Characteristics
Tamb = 25 unless otherwise specified C, Parameter Breakdown voltage1) Dark current Peak sensitivity wavelength Responsivity at P Sensitivity range at 10% Shunt resistance Noise equivalent power Specific detectivity Junction capacitance Switching time (RL = 50
1)
Test conditions IR = 10 A VR = 1 V VR = 0 V VR = 0 V
1)
Symbol VR ID p S min, max 0.5 RSH NEP D* CJ tr , tf
Min 5
Typ
Max
Unit V
1.0 890 0.3 800 115 205 3.2x10 500 175
-14 12
2.5
nA nm A/W
0.55 960
VR = 0 V VR = 0 V VR = 10 mV = 880 nm = 880 nm VR = 0 V
nm nm G
Spectral bandwidth at 50%
W/ Hz
cm Hz W -1
2.4x10
pF ns
)
VR = 1 V
for information only
Labeling
Type EPD-880-1-0.9-1 *Note: All measurements carried out with EPIGAP equipment
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 1 of 2 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
Lot N
Typ. S [A/W]
Quantity
SMD-Photodiode
28.01.2008
EPD-880-1-0.9-1
rev. 01
Typical spectral response [A/W]
0,6 0,5
1,20 1,15 1,30 1,25
Relative Photocurrent vs. Temperature
UR = 5V TK = 0,25%/K
Relative Photocurrent
0,4 0,3
1,10 1,05 1,00 0,95 0,90 0,85
0,2 0,1
0,0
0,80 -40 -20 0 20 40 60 80 100 120
700
750
800
850 900 Wavelength [nm]
950
1000
Temperature (C)
Dark Current vs. Temperature
100
Short-circuit current vs. irradiance (typical)
2)
UR = 1V TK = 1,05 times/K
10
10
3
Dark Current (pA)
Short-circuit current [A]
-40 -20 0 20 40 60 80 100 120
10
2
10
1
1
10
0
0,1
10
-1
10
-2
Temperature (C)
10
-2
10
-1
10 2 Irradiance [mW/cm ]
0
10
1
10
2
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 2 of 2 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

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