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| Photodiode Preliminary EPD-880-0-1.4 6/28/2007 rev. 01/07 Case TO-46 Type Integrated filter Technology AlGaAs/GaAs Wavelength Infrared 5,1 -0,1 +0,03 +0,1 O 5,31 O 4,22 O 0,44 -0,03 0,2 -0,025 +0,025 O 4,75 -0,1 2,54 Cathode O 5,33 +0,05 -0,05 Description Selective photodiode mounted in hermetically sealed TO-46 package. Narrow bandwidth and high spectral sensitivity in the infrared range (810...950 nm). Note: Special packages with standoff available on request Anode Chip Location 13,4 -1,6 +1,6 +0,075 Applications Alarm systems, light barriers, special sensors, analytics, optical communication 0,23 TO-46 Miscellaneous Parameters Tamb = 25 unless otherwise specified C, Parameter Active area Temperature coefficient of ID Operating temperature range Storage temperature range Soldering Temperature Acceptance angle at 50% S Optical and Electrical Characteristics Tamb = 25 unless otherwise specified C, Parameter Breakdown voltage1) Dark current Peak sensitivity wavelength Responsivity at P Sensitivity range at 10% Shunt resistance Noise equivalent power Specific detectivity Junction capacitance Switching time (RL = 50 ) 1) Test onditions Symbol A TC(ID) Tamb Tstg Value 1.2 5 -30 to +100 -40 to +125 260 45 Unit mm %/K C C C deg. t 3 s, 3 mm from case Tsld Test conditions IR = 10 A VR = 1 V VR = 0 V VR = 0 V VR = 0 V VR = 0 V VR = 10 mV = 880 nm = 880 nm VR = 0 V VR = 1 V VR = 0 V Ee = 1mW/cm Symbol VR ID p S min, max 0.5 RSH NEP D* CJ tr , tf IPh Min 5 Typ Max Unit V 1.0 890 0.3 800 115 205 3.3x10 590 200 4.8 -14 2.5 nA nm A/W 0.55 960 nm nm G Spectral bandwidth at 50% W/ Hz cm Hz W -1 2.4x1012 pF ns A Photo-current at P = 875 nm 1) 2) for information only Halogen lamp source with appropriate filter Note: All measurements carried out with EPIGAP equipment Labeling Type EPD-880-0-1.4 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 Lot N RD (typ.) [G ] Quantity 1 of 2 Photodiode Preliminary EPD-880-0-1.4 6/28/2007 rev. 01/07 Typical spectral response [A/W] 0,6 0,5 1,30 1,25 1,20 Relative Photocurrent vs. Temperature UR = 5V TK = 0,25%/K 0,4 R elative Photocurrent 1,15 1,10 1,05 1,00 0,95 0,90 0,85 0,80 0,3 0,2 0,1 0,0 700 750 800 850 900 Wavelength [nm] 950 1000 -40 -20 0 20 40 60 80 100 120 Temperature (C) Dark Current vs. Temperature 100 Short-circuit current vs. irradiance (typical) 2) 10 3 UR = 1V TK = 1,05 times/K 10 Short-circuit current [A] -40 -20 0 20 40 60 80 100 120 Dark Current (pA) 10 2 10 1 1 10 0 0,1 10 -1 10 -2 Temperature (C) 10 -2 10 -1 10 2 Irradiance [mW/cm ] 0 10 1 10 2 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2 |
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