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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. CHT5551SPT CURRENT 0.2 Ampere FEATURE * Small flat package. ( SC-88/SOT-363 ) * Suitable for high packing density. (1) (6) SC-88/SOT-363 CONSTRUCTION *NPN SILICON Transistor 1.2~1.4 0.65 0.65 2.0~2.2 MARKING ES (4) 0.15~0.35 (3) 1.15~1.35 0.08~0.15 0.1 Min. 0.8~1.1 0~0.1 2.15~2.45 CIRCUIT 6 4 1 3 Dimensions in millimeters SC-88/SOT-363 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector - - - - Tamb 25 C; note 1 - MIN. MAX. 180 160 6.0 200 200 +150 150 +150 UNIT V V V mA mW C C C -65 - -65 RATING CHARACTERISTIC CURVES ( CHT5551SPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO ICBO IEBO hFE PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain CONDITIONS VCB = 120 V VCB = 120 V,TA=100OC VEB=4.0V IC = 1.0 mA; VCE = 5V IC = 10mA; VCE = 5V IC = 50 mA; VCE =5V - - - 80 80 30 MIN. MAX. 50 50 50 - 250 - UNIT nA uA nA PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 357 UNIT K/W VCEsat collector-emitter saturation voltage base-emitter saturation voltage collector capacitance IC = 10 mA; IB = 1.0 m A -50 IC = mA; IB = 5.0 m A IC =10mA; IB =1.0mA -50 IC = mA; IB = 5.0 m A IE = ie = 0; VCB = 1 0 V; f = 1 MHz VCE=10V,IC=1.0mA,f=1.0KHz - - - - - 50 100 0.15 0.2 1.0 1.0 6.0 200 300 8.0 V V V V pF VBEsat Cob hfe fT F transition frequency noise gure IC = 10 mA; VCE = 1 0 V; f = 1.0 MHz MHz dB IC = 200 mA; VCE = 5 V; RS = 1 0 ; - f =10Hz to 15.7KHz |
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