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NS6A5.0AT3G 600 Watt Peak Power Zener Transient Voltage Suppressors
Unidirectional
The NS6A5.0AT3G is designed to protect voltage sensitive components from high voltage, high energy transients. This device has excellent clamping capability, high surge capability, low zener impedance and fast response time. The NS6A5.0AT3G is ideally suited for use in computer hard disk drives, communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications.
Specification Features: http://onsemi.com
PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS
Cathode
Anode
* * * * * * *
Peak Reverse Working Voltage of 5 V Peak Pulse Power of 600 W (10 x 1000 msec) ESD Rating of Class 3 (>16 kV) per Human Body Model ESD Rating of Class 4 (>8 kV) IEC 61000-4-2 Fast Response Time Low Profile Package This is a Pb-Free Device
SMA CASE 403D PLASTIC
MARKING DIAGRAM
6QE AYWWG 6QE A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb-Free Package
Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds
LEADS: Modified L-Bend providing more contact area to bond pads POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any
ORDERING INFORMATION
Device NS6A5.0AT3G Package SMA (Pb-Free) Shipping 5000/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2008
November, 2008 - Rev. 1
1
Publication Order Number: NS6A5.0A/D
NS6A5.0AT3G
MAXIMUM RATINGS
Rating Peak Power Dissipation (Note 1) @ TL = 25C, Pulse Width = 1 ms DC Power Dissipation @ TL = 75C Measured Zero Lead Length (Note 2) Derate Above 75C Thermal Resistance from Junction-to-Lead DC Power Dissipation (Note 3) @ TA = 25C Derate Above 25C Thermal Resistance from Junction-to-Ambient Forward Surge Current (Note 4) @ TA = 25C Operating and Storage Temperature Range Symbol PPK PD RqJL PD RqJA IFSM TJ, Tstg Value 600 1.5 20 50 0.5 4.0 250 40 -65 to +150 Unit W W mW/C C/W W mW/C C/W A C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 10 X 1000 ms, non-repetitive. 2. 1 in square copper pad, FR-4 board. 3. FR-4 board, using ON Semiconductor minimum recommended footprint, as shown in 403D case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS (TA = 25C unless
otherwise noted, VF = 3.5 V Max. @ IF (Note 5) = 30 A) Symbol IPP VC VRWM IR VBR IT IF VF Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Forward Current Forward Voltage @ IF VC VBR VRWM IF
I
IR VF IT
V
IPP
5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, non-repetitive duty cycle.
Uni-Directional TVS
ELECTRICAL CHARACTERISTICS
VRWM (Note 6) V Breakdown Voltage IR @ VRWM mA VBR (Note 7) Volts Min Nom Max @ IT mA VC @ IPP (Note 8) VC V IPP A Ctyp (Note 9) pF
Device
Device Marking
NS6A5.0AT3G 6QE 5.0 800 6.40 6.7 7.0 10 9.2 65.2 2700 6. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than the DC or continuous peak operating voltage level. 7. VBR measured at pulse test current IT at an ambient temperature of 25C. 8. Surge current waveform per Figure 1. 9. Bias Voltage = 0 V, F = 1 MHz, TJ = 25C.
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NS6A5.0AT3G
PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ T = 25 C A PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150
tr 10 ms 100 VALUE (%) PEAK VALUE - IPP
HALF VALUE 50 tP 0
IPP 2
0
1
2 t, TIME (ms)
3
4
TA, AMBIENT TEMPERATURE (C)
Figure 1. 10 x 1000 ms Pulse Waveform
Figure 2. Pulse Derating Curve
Zin
Vin
LOAD
VL
Figure 3. Typical Protection Circuit
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NS6A5.0AT3G
PACKAGE DIMENSIONS
SMA CASE 403D-02 ISSUE F
HE E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 403D-01 OBSOLETE, NEW STANDARD IS 403D-02. DIM A A1 b c D E HE L MIN 1.97 0.05 1.27 0.15 2.29 4.06 4.83 0.76 MILLIMETERS NOM MAX 2.10 2.20 0.10 0.15 1.45 1.63 0.28 0.41 2.60 2.92 4.32 4.57 5.21 5.59 1.14 1.52 MIN 0.078 0.002 0.050 0.006 0.090 0.160 0.190 0.030 INCHES NOM 0.083 0.004 0.057 0.011 0.103 0.170 0.205 0.045 MAX 0.087 0.006 0.064 0.016 0.115 0.180 0.220 0.060
b
D
POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES)
A A1
L
c
SOLDERING FOOTPRINT*
4.0 0.157
2.0 0.0787
2.0 0.0787
SCALE 8:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
SURMETIC is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
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NS6A5.0A/D

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