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 MBR870L thru MBR8100L
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Dimensions TO-220AC A C(TAB) A C C
Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39
A=Anode, C=Cathode, TAB=Cathode VRRM V 70 80 90 100 VRMS V 49 56 63 70 VDC V 70 80 90 100
MBR870L MBR880L MBR890L MBR8100L Symbol I(AV) IFSM dv/dt VF IR ROJC CJ TJ TSTG
Characteristics Maximum Average Forward Rectified Current @TC=125oC
Maximum Ratings 8 230 10000 IF=8A @TJ=25oC IF=8A @TJ=125oC @TJ=25oC @TJ=125oC 0.72 0.58 0.55 7 2.0 280 -55 to +150 -55 to +175
Unit A A V/us V mA
o
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Voltage Rate Of Change (Rated VR) Maximum Forward Voltage (Note 1) Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 3) Operating Temperature Range Storage Temperature Range
C/W pF
o o
C C
NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
* Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-220AC molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any
MBR870L thru MBR8100L
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
10
PEAK FORWARD SURGE CURRENT, AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT AMPERES
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
300 250 200 150 100 50 0 1 2 5 10 20 50 100
8
6 4
2
RESISTIVE OR INDUCTIVE LOAD
8.3ms Single Half-Sine-Wave (JEDEC METHOD)
0
25
50
75
100
125
150
175
CASE TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
1000
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS REVERSE CURRENT ,(mA)
100
10
10
TJ = 125 C
1.0
1.0
TJ = 75 C
0.1
TJ = 25 C
TJ = 25 C PULSE WIDTH 300ua 300us 2% Duty cycle
0.01 0 20 40 60 80 100 120 140
0.1 0.1 0.2 0.3 0.4 0.5
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
0.6
0.7
0.8
0.9
1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
10000
CAPACITANCE , (pF)
1000
TJ = 25 C, f= 1MHz
100 0.1 1 4 10 100
REVERSE VOLTAGE , VOLTS


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