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FOD3181 -- 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler
August 2008
FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler
Features
Guaranteed operating temperature range of -20C to
Description
The FOD3181 is a 0.5A Output Current, High Speed MOSFET Gate Drive Optocoupler. It consists of a gallium aluminum arsenide (AlGaAs) light emitting diode optically coupled to a CMOS integrated circuit with a power stage. The power stage consists of a PMOS pullup and a NMOS pull-down power transistor. It is ideally suited for high frequency driving of MOSFETs used in Plasma Display Panels (PDPs), motor control invertor applications, and high performance DC/DC converters. The device is packaged in an 8-pin dual in-line housing compatible with 260C reflow processes for lead free solder compliance.
+85C 0.5A minimum peak output current High speed response: 500ns max propagation delay over temperature range Wide VCC operating range: 10V to 20V 5000Vrms, 1 minute isolation Minimum creepage distance of 7.0mm Minimum clearance distance of 7.0mm C-UL, UL and VDE* approved 10kV/s minimum common mode rejection (CMR) at VCM = 1,500V RDS(ON) of 1.5 (typ.) offers lower power dissipation
Applications
Plasma Display Panel High performance DC/DC convertor High performance switch mode power supply High performance uninterruptible power supply Isolated Power MOSFET gate drive
*Requires `V' ordering option
Functional Block Diagram
FOD3181
Package Outlines
NO CONNECTION 1
8 VCC
8
ANODE 2
7 OUTPUT
1
CATHODE 3
6 OUTPUT
NO CONNECTION 4
5 VEE
8 1
8 1
Note: A 0.1F bypass capacitor must be connected between pins 5 and 8.
(c)2003 Fairchild Semiconductor Corporation FOD3181 Rev. 1.0.8
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FOD3181 -- 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol
TSTG TOPR TJ TSOL IF(AVG) IF(tr) IF(TRAN) VR IOH(PEAK) IOL(PEAK) VCC - VEE VO(PEAK) PO PD Storage Temperature
Parameter
Operating Temperature Junction Temperature Lead Solder Temperature Average Input Current(1) Minimum Rate of Rise of LED Current Peak Transient Input Current (<1s pulse width, 300pps) Reverse Input Voltage "High" Peak Output Current(2) "Low" Peak Output Supply Voltage Output Voltage Output Power Dissipation(4) Total Power Dissipation(4) Current(2)
Value
-40 to +125 -20 to +85 -20 to +125 260 for 10 sec. 25 250 1.0 5 1.5 1.5 -0.5 to 25 0 to VCC 250 300
Units
C C C C mA ns A V A A V V mW mW
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to absolute maximum ratings.
Symbol
VCC - VEE IF(ON) VF(OFF) TOPR Power Supply Input Current (ON) Input Voltage (OFF)
Parameter
Value
10 to 20 12 to 18 0 to 0.8 -20 to +85
Units
V mA V C
Operating Temperature
(c)2003 Fairchild Semiconductor Corporation FOD3181 Rev. 1.0.8
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FOD3181 -- 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler
Electrical-Optical Characteristics (DC)
Symbol Parameter
IOH IOL VOH VOL ICCH ICCL IFLH VFHL VF High Level Output Current(2)(3) Low Level Output High Level Current(2)(3) Output Voltage(5)(6)
(TA = -20C to +70C)
Over recommended operating conditions unless otherwise specified.
Test Conditions
VOH = (VCC - VEE - 1V) VOL = (VCC - VEE - 1V) IO = -100mA IO = 100mA Output Open IF = 7 to 10mA Output Open VF = 0 to 0.8V IO = 0mA, VO > 5V
Min.
0.5 0.5 VCC - 0.5
Typ.*
Max.
Unit
A A V
Low Level Output Voltage(5)(6) High Level Supply Current Low Level Supply Current Threshold Input Current Low to High Input Forward Voltage Temperature Coefficient of Forward Voltage Input Reverse Breakdown Voltage Input Capacitance
VEE + 0.5 4.8 5.0 6.0 6.0 10 0.8 1.2 1.5 -1.5 5 60 1.8
V mA mA mA V V mV/C V pF
Threshold Input Voltage High to Low IO = 0mA, VO < 0.5V IF = 10mA IF = 10mA IR = 10A f = 1MHz, VF = 0V
VF / TA
BVR CIN
Switching Characteristics (TA = -20C to +70C)
Over recommended operating conditions unless otherwise specified.
Symbol
tPLH tPHL tr tf | CMH | | CML |
Parameter
Test Conditions
Min.
50 50
Typ.*
135 105 75 55
Max.
500 500
Unit
ns ns ns ns kV/s kV/s
Propagation Delay Time to High IF = 10mA, Rg = 10, f = 250kHz, Output Level(7) Duty Cycle = 50%, Cg = 10nF Propagation Delay Time to Low Output Level(7) Rise Time Fall Time Output High Level Common Mode Transient Immunity(8)(9) Output Low Level Common Mode Transient Immunity(8)(10) TA = +25C, If = 7 to 10mA, VCM = 1.5kV, VCC = 20V TA = +25C, Vf = 0V, VCM = 1.5kV, VCC = 20V CL = 10nF, Rg = 10
10 10
Isolation Characteristics (TA = -20C to +70C)
Symbol
VISO RI-O CI-O Parameter Withstand Isolation Voltage(11)(12)
Test Conditions
TA = 25C, R.H. < 50%, t = 1min., II-O 20 A VI-O = 500V Freq. = 1MHz
Min.
5000
Typ.*
Max.
Unit
Vrms
Resistance (input to output)(12) Capacitance (input to output)
1011 1
pF
* All typical values at TA = 25C
(c)2003 Fairchild Semiconductor Corporation FOD3181 Rev. 1.0.8
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FOD3181 -- 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler
Notes: 1. Derate linearly above +70C free air temperature at a rate of 0.3mA/C. 2. The output currents IOH and IOL are specified with a capacitive current limited load = (3 x 0.01F) + 0.5, frequency = 8kHz, 50% DF. 3. The output currents IOH and IOL are specified with a capacitive current limited load = (3 x 0.01F) + 40, frequency = 8kHz, 50% DF. 4. No derating required across operating temperature range. 5. In this test, VOH is measured with a dc load current of 100mA. When driving capacitive load VOH will approach VCC as IOH approaches zero amps. 6. 7. Maximum pulse width = 1ms, maximum duty cycle = 20%. tPHL propagation delay is measured from the 50% level on the falling edge of the input pulse to the 50% level of the falling edge of the VO signal. tPLH propagation delay is measured from the 50% level on the rising edge of the input pulse to the 50% level of the rising edge of the VO signal. Pin 1 and 4 need to be connected to LED common. Common mode transient immunity in the high state is the maximum tolerable dVCM /dt of the common mode pulse VCM to assure that the output will remain in the high state (i.e. VO > 10.0V).
8. 9.
10. Common mode transient immunity in a low state is the maximum tolerable dVCM /dt of the common mode pulse, VCM, to assure that the output will remain in a low state (i.e. VO < 1.0V). 11. In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage > 6000Vrms, 60Hz for 1 second (leakage detection current limit II-O < 5A). 12. Device considered a two-terminal device: pins on input side shorted together and pins on output side shorted together.
(c)2003 Fairchild Semiconductor Corporation FOD3181 Rev. 1.0.8
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FOD3181 -- 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler
Typical Performance Curves
Fig. 1 Input Forward Current vs. Forward Voltage
100
6
Fig. 2 Low To High Input Current Threshold vs. Ambient Temperature
V = 10 to 20V CC VEE = 0 Output = Open
IFLH - LOW TO HIGH INPUT CURRENT THRESHOLD (mA)
I F - FORWARD CURRENT (mA)
10
5
4
1
TA = 100C
TA = -40C
3
0.1
TA = 25C
2
0.01
1
0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0 -40 -20 0 20 40 60 80 100
VF - FORWARD VOLTAGE (V)
TA - AMBIENT TEMPERATURE (C)
Fig. 3 Output Low Voltage vs. Ambient Temperature
0.30 VF(OFF) = -3.0V to 0.8V IOUT = 100mA V = 10V to 20V
CC
Fig. 4 High Output Voltage Drop vs. Ambient Temperature
(VOH - VCC) - HIGH OUTPUT VOLTAGE DROP (V)
0.00 V -0.05
CC
= 10 to 20V, VEE = 0
V OL - OUTPUT LOW VOLTAGE (V)
0.25
IF = 10mA to 16mA IOUT = -100 mA
VEE = 0 0.20
-0.10
0.15
-0.15
0.10
-0.20
0.05
-0.25
0.00 -40 -20 0 20 40 60 80 100
-0.30 -40 -20 0 20 40 60 80 100
TA - AMBIENT TEMPERATURE (C)
TA - AMBIENT TEMPERATURE (C)
Fig. 5 Supply Current vs. Ambient Temperature
6.2 V 5.8
CC
Fig. 6 Supply Current vs. Supply Voltage
6.2 IF = 10mA (for ICCH) IF = 0mA (for ICCL) TA = 25oC, VEE = 0V
= 20V, VEE = 0
I CC - SUPPLY CURRENT (mA)
5.4 ICCL 5.0 ICCH 4.6
I CC - SUPPLY CURRENT (mA)
IF = 10mA (for ICCH) IF = 0mA (for ICCL)
5.8
5.4
5.0
ICCL ICCH
4.6
4.2
4.2
3.8 -40 -20 0 20 40 60 80 100
3.8 10 12 14 16 18 20
TA - AMBIENT TEMPERATURE (C)
VCC - SUPPLY VOLTAGE (V)
(c)2003 Fairchild Semiconductor Corporation FOD3181 Rev. 1.0.8
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FOD3181 -- 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler
Typical Performance Curves (Continued)
Fig. 7 Propagation Delay vs. Load Capacitance
200 VCC = 20V, VEE = 0 IF = 10mA, TA = 25oC
Fig. 8 Propagation Delay vs. Forward LED Current
200 VCC = 20V, VEE = 0 RG = 10, CG = 10nF f = 250 kHz, D. Cycle = 50% TA = 25oC
t P - PROPAGATION DELAY (ns)
t P - PROPAGATION DELAY (ns)
180
RG = 10, CG = 10nF f = 250 kHz, D. Cycle = 50%
180
160 tPHL
160 tPHL
140
140
120 tPLH 100
120 tPLH 100
80
80
60 5 10 15 20 25
60 6 8 10 12 14 16
CG - LOAD CAPACITANCE (nF)
IF - FORWARD LED CURRENT (mA)
Fig. 9 Propagation Delay vs. Series Load Resistance
200 VCC = 20V, VEE = 0 IF = 10mA, TA = 25oC CG = 10nF f = 250 kHz, D. Cycle = 50%
Fig. 10 Propagation Delay vs. Ambient Temperature
200 VCC = 20V, VEE = 0 IF = 10mA RG = 10, CG = 10nF f = 250kHz, D. Cycle = 50%
t P - PROPAGATION DELAY (ns)
160
t P - PROPAGATION DELAY (ns)
180
180
160
140 tPHL 120 tPLH
140
tPHL
120 tPLH 100
100
80
80
60 10 20 30 40 50
60 -40 -20 0 20 40 60 80 100
RG - SERIES LOAD RESISTANCE ()
TA - AMBIENT TEMPERATURE (C)
Fig. 11 Propagation Delay vs. Supply Voltage
180 IF = 10mA, TA = 25oC
t P - PROPAGATION DELAY (ns)
160
RG = 10, CG = 10nF f = 250 kHz, D. Cycle = 50%
140
tPHL
120 tPLH 100
80
60 10 15 20 25
VCC - SUPPLY VOLTAGE (V)
(c)2003 Fairchild Semiconductor Corporation FOD3181 Rev. 1.0.8
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FOD3181 -- 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler
Package Dimensions
Through Hole
PIN 1 ID.
4 3 2 1
4 3 2 1
0.4" Lead Spacing
PIN 1 ID.
0.270 (6.86) 0.250 (6.35)
5 6 7 8
0.270 (6.86) 0.250 (6.35)
0.390 (9.91) 0.370 (9.40)
5
6
7
8
SEATING PLANE
0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.140 (3.55) 0.020 (0.51) MIN
SEATING PLANE
0.390 (9.91) 0.370 (9.40) 0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.140 (3.55) 0.004 (0.10) MIN
0.154 (3.90) 0.120 (3.05) 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP 0.016 (0.40) 0.008 (0.20) 15 MAX 0.300 (7.62) TYP
0.154 (3.90) 0.120 (3.05) 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP 0.016 (0.40) 0.008 (0.20) 0 to 15 0.400 (10.16) TYP
Surface Mount
0.390 (9.91) 0.370 (9.40)
4 3 2 1
8-Pin DIP - Land Pattern
0.070 (1.78)
PIN 1 ID.
0.270 (6.86) 0.250 (6.35)
0.060 (1.52)
5
6
7
8
0.100 (2.54) 0.295 (7.49) 0.415 (10.54) 0.030 (0.76)
0.070 (1.78) 0.045 (1.14) 0.020 (0.51) MIN
0.300 (7.62) TYP 0.016 (0.41) 0.008 (0.20)
0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP Lead Coplanarity : 0.004 (0.10) MAX
0.045 (1.14) 0.315 (8.00) MIN 0.405 (10.30) MAX.
Note: All dimensions are in inches (millimeters)
(c)2003 Fairchild Semiconductor Corporation FOD3181 Rev. 1.0.8
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FOD3181 -- 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler
Ordering Information
Option
No option S SD T V TV SV SDV
Order Entry Identifier (Example)
FOD3181 FOD3181S FOD3181SD FOD3181T FOD3181V FOD3181TV FOD3181SV FOD3181SDV
Description
Standard Through Hole Device Surface Mount, Lead Bend Surface Mount, Tape and Reel 0.4" Lead Spacing VDE 0884 VDE 0884, 0.4" Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape and Reel
Marking Information
1
3181 V
3 4
2 6
XX YY B
5
Definitions
1 2 3 4 5 6 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option - See order entry table) Two digit year code, e.g., `03' Two digit work week ranging from `01' to `53' Assembly package code
(c)2003 Fairchild Semiconductor Corporation FOD3181 Rev. 1.0.8
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FOD3181 -- 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler
Carrier Tape Specifications
D0 K0
t
P0
P2
E
A0 W1 B0
F W
d
User Direction of Feed
P
D1
Symbol
W t P0 D0 E F P2 P A0 B0 K0 W1 d R Pocket Pitch Tape Width
Description
Tape Thickness Sprocket Hole Pitch Sprocket Hole Diameter Sprocket Hole Location Pocket Location
Dimension in mm
16.0 0.3 0.30 0.05 4.0 0.1 1.55 0.05 1.75 0.10 7.5 0.1 4.0 0.1 12.0 0.1 10.30 0.20 10.30 0.20 4.90 0.20
Pocket Dimensions
Cover Tape Width Cover Tape Thickness Max. Component Rotation or Tilt Min. Bending Radius
1.6 0.1 0.1 max 10 30
(c)2003 Fairchild Semiconductor Corporation FOD3181 Rev. 1.0.8
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FOD3181 -- 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler
Reflow Profile
300 Temperature (C) 250 200 150 100 50 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Time (Minute) * Peak reflow temperature: 260 C (package surface temperature) * Time of temperature higher than 183 C for 160 seconds or less * One time soldering reflow is recommended Time above 183C, <160 sec Ramp up = 2-10C/sec 260 C peak 245 C, 10-30 s
Output Power Derating
The maximum package power dissipation is 295mW. The package is limited to this level to ensure that under normal operating conditions and over extended temperature range that the semiconductor junction temperatures do not exceed 125C. The package power is composed of three elements; the LED, static operating power of the output IC, and the power dissipated in the output power MOSFET transistors. The power rating of the output IC is 250mW. This power is divided between the static power of the integrated circuit, which is the product of IDD times the power supply voltage (VDD - VEE). The maximum IC static output power is 150mW, (VDD - VEE) = 25V, IDD = 6mA. This maximum condition is valid over the operational temperature range of -40C to +100C. Under these maximum operating conditions, the output of the power MOSFET is allowed to dissipate 100mW of power. The absolute maximum output power dissipation versus ambient temperature is shown in Figure 12. The output driver is capable of supplying 100mW of output power over the temperature range from -40C to 87C. The output derates to 90mW at the absolute maximum operating temperature of 100C.
Fig. 12 Absolute Maximum Power Dissipation vs. Ambient Temperature
0.15 VDD - VEE = Max. = 25V IDD = 6mA LED Power = 45mW 0.1
The output power is the product of the average output current squared times the output transistor's RDS(ON): PO(AVG) = IO(AVG)2 * RDS(ON) The IO(AVG) is the product of the duty factor times the peak current flowing in the output. The duty factor is the ratio of the `on' time of the output load current divided by the period of the operating frequency. An RDS(ON) of 2.0 results in an average output load current of 200mA. The load duty factor is a ratio of the average output time of the power MOSFET load circuit and period of the driving frequency. The maximum permissible, operating frequency is determined by the load supplied to the output at its resulting output pulse width. Figure 13 shows an example of a 0.03F gate to source capacitance with a series resistance of 40. This reactive load results in a composite average pulse width of 1.5s. Under this load condition it is not necessary to derate the absolute maximum output current out to 250kHz.
Fig. 13 Output Current Derating vs. Frequency
1.5
IO - PEAK OUTPUT CURRENT (A)
1
POWER DISSIPATION (W)
TA = -40C to 100C Load = 0.03F + 40 VDD = 20V IF = 12mA LED Duty Factor = 50% Output Pulse Width = 1.5s
0.5
0.05
0 1 10 250
F - FREQUENCY (kHz)
0 -40 -20 0 20 40 60 80 85
TA - AMBIENT TEMPERATURE (C)
(c)2003 Fairchild Semiconductor Corporation FOD3181 Rev. 1.0.8
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FOD3181 -- 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler
IOH and IOL Test Conditions
This device is tested and specified when driving a complex reactive load. The load consists of a capacitor in the series with a current limiting resistor. The capacitor represents the gate to source capacitance of a power MOSFET transistor. The test load is a 0.03uF capacitor in series with an 40 resistor. The LED test frequency is 10.0kHz with a 50% duty cycle. The combined IOH and IOL output load current duty factor is 0.6% at the test frequency. Figure 14 illustrates the relationship of the LED input drive current and the device's output voltage and sourcing and sinking currents. The 0.03F capacitor load represents the gate to source capacitance of a very large power MOSFET transistor. A single supply voltage of 20V is used in the evaluation. Figure 15 shows the test schematic to evaluate the output voltage and sourcing and sinking capability of the device. The IOH and IOL are measured at the peak of their respective current pulses.
IF = 8mA
LED
ON
20V
OFF
OUTPUT
0
P-Channel (ON)
IOH = 0.5A
N-Channel (ON)
Load Current
IOL = 0.5A
1s/Div
Figure 14. FOD 3180 Output Current and Output Voltage vs. LED Drive
Pulse Generator
1
FOD3181 8
0.1F
2 7
VO 0.33F
IOMON
IFMON
3 6
40
22F
100
100
4 5
Figure 15. Test Schematic
(c)2003 Fairchild Semiconductor Corporation FOD3181 Rev. 1.0.8
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FOD3181 -- 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler
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ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I35
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