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2SK3418
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0407-0200 (Previous ADE-208-941 (Z)) Rev.2.00 Sep.10.2004
Features
* Low on-resistance RDS(on) = 4.3 m typ. * Capable of 4 V gate drive * High speed switching
Outline
TO-220AB
D
G
1. Gate 2. Drain (Flange) 3. Source
S
1 2 3
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10s, duty cycle 1% 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAP EARNote3 PchNote2 Tch Tstg
Note3
Ratings 60 20 85 340 85 60 308 110 150 - 55 to +150
Unit V V A A A A mJ W C C
Rev.2.00 Sep. 10, 2004 page 1 of 7
2SK3418
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 1. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) RDS(on) Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 60 -- -- 1.0 55 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 90 4.3 6.0 9770 1340 470 180 32 36 53 320 700 380 1.0 70 Max -- 10 0.1 2.5 -- 5.5 9.0 -- -- -- -- -- -- -- -- -- -- -- -- Unit V A A V S m m pF pF pF nC nC nC ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 VDS = 60 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V, ID = 1 mANote1 ID = 45 A, VDS = 10 VNote1 ID = 45 A, VGS= 10 VNote1 ID = 45 A, VGS=4 VNote1 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V VGS = 10 V ID = 85 A VGS = 10 V ID= 45 A RL = 0.67 IF = 85 A, VGS = 0 IF = 85 A, VGS = 0 diF / dt = 50 A / s
Rev.2.00 Sep. 10, 2004 page 2 of 7
2SK3418
Main Characteristics
Power vs. Temperature Derating Maximum Safe Operation Area
160
Pch (W)
1000 300
ID (A)
10
0 = 1 DC 10m ms s Op s ( e1 (T rati sho c = on t) 25 C ) Operation in
s
120
100 30 10 3 1 0.3
PW
10
Channel Dissipation
80
Drain Current
40
this area is limited by RDS(on)
0
50
100
150
Tc (C)
200
0.1 Ta = 25C 0.1 0.3 1
3
10
30
VDS (V)
100
Case Temperature
Drain to Source Voltage
Typical Output Characteristics
Typical Transfer Characteristics
100
VGS = 10 V 5V 4V
100
Pulse Test
ID (A)
ID (A)
80
80
V DS = 10 V Pulse Test
60
Drain Current Drain Current
60
40
3V
40
25C
20
2.5 V
20
75C
Tc = - 25C
0
2
4
6
8
VDS (V)
10
0
1
2
3
4
VGS (V)
5
Drain to Source Voltage
Gate to Source Voltage
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Voltage VDS(on) (mV) Drain to Source On State Resistance RDS(on) (m)
Static Drain to Source on State Resistance vs. Drain Current
0.5
Pulse Test
100
Pulse Test
0.4
30 10 3 1 0.3 0.1 1
VGS = 4 V 10 V
0.3
I D = 50 A
0.2
20 A 10 A
0.1
0
4
8
12
16
VGS (V)
20
3
10
30
100
ID (A)
300 1000
Gate to Source Voltage
Drain Current
Rev.2.00 Sep. 10, 2004 page 3 of 7
2SK3418
Static Drain to Source on State Resistance vs. Temperature
20
Forward Transfer Admittance |yfs| (S)
Drain to Source On State Resistance RDS(on) (m)
Forward Transfer Admittance vs. Drain Current
500
V DS = 10 V
Pulse Test
16
200 100 50 20 10 5 2 1 0.5 0.1
Pulse Test
Tc = - 25C
12
I D = 50 A 10, 20 A 4V 10, 20, 50 A
8
25C 75C
4 0 -50
VGS = 10 V
0
50
100
150
200
0.3
1
3
10
30
100
Case Temperature
Tc
(C)
Drain Current
ID (A)
Body-Drain Diode Reverse Recovery Time
Reverse Recovery Time trr (ns)
1000 500 200 100 50 20 10 0.1
di / dt = 50 A / s V GS = 0, Ta = 25C
Typical Capacitance vs. Drain to Source Voltage
30000
VGS = 0 f = 1 MHz
Capacitance C (pF)
10000
Ciss
3000
Coss
1000
300 100 0
Crss
0.3
1
3
10
30
100
10
20
30
40
50
Reverse Drain Current
IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
VDS (V)
I D = 85 A V GS
Switching Characteristics
VGS (V)
20 1000
t d(off) tf
100
80
16
Drain to Source Voltage
Gate to Source Voltage
Switching Time t (ns)
500
60
40
VDS = 50 V 25 V 10 V V DS VDS = 50 V 25 V 10 V
12
200 100 50 20 10 0.1 0.2 0.5 1
tr
8
t d(on) VGS = 10 V, VDD = 30 V PW = 5 s, duty < 1 %
20
4 0 400
0
80
160
240
320
2
5 10 20
50 100
Gate Charge
Qg (nc)
Drain Current
ID (A)
Rev.2.00 Sep. 10, 2004 page 4 of 7
2SK3418
Reverse Drain Current vs. Source to Drain Voltage Maximum Avalanche Energy vs. Channel Temperature Derating
400
I AP = 60 A V DD = 15 V duty < 0.1 % Rg > 50
Reverse Drain Current IDR (A)
100
10 V
Repetitive Avalanche Energy EAR (mJ)
80
5V
320
60
VGS = 0, - 5 V
240
40
160
20
80 0 25
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
50
75
100
125
150
Source to Drain Voltage
VSD (V)
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3
Tc = 25C
1
D=1 0.5
0.3
0.2
0.1
0.1
ch - c(t) = s (t) * ch - c ch - c = 1.14C/W, Tc = 25C
P DM PW T D= PW T
0.05
0.03
0.02 1 lse 0.0 t pu o h 1s
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
V DS Monitor L EAR = I AP Monitor Rg Vin 15 V D. U. T VDD
Avalanche Waveform
1 *L*I 2
2
AP
*
VDSS VDSS - V DD
V (BR)DSS I AP V DS ID
50
0
VDD
Rev.2.00 Sep. 10, 2004 page 5 of 7
2SK3418
Switching Time Test Circuit Waveform 90% 10% 10% 10%
Vin Monitor D.U.T. RL
Vout Monitor Vin Vout
Vin 10 V
50
VDD = 30 V td(on)
90% tr
90% td(off) tf
Rev.2.00 Sep. 10, 2004 page 6 of 7
2SK3418
Package Dimensions
As of January, 2003
Unit: mm
11.5 Max
2.79 0.2
10.16 0.2 9.5 8.0 3.6 -0.08
+0.1
4.44 0.2 1.26 0.15
6.4
+0.2 -0.1
18.5 0.5
15.0 0.3
1.27
2.7 Max
14.0 0.5
1.5 Max
7.8 0.5
0.76 0.1
2.54 0.5
2.54 0.5
0.5 0.1
Package Code JEDEC JEITA Mass (reference value)
TO-220AB Conforms Conforms 1.8 g
Ordering Information
Part Name 2SK3418-E Quantity 50 pcs sack Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Sep. 10, 2004 page 7 of 7
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
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