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| MITSUBISHI IGBT MODULES CM75MX-12A HIGH POWER SWITCHING USE CM75MX-12A IC ..................................................................... 75A VCES ............................................................ 600V CIB (3-phase Converter + 3-phase Inverter + Brake) Flatbase Type / Insulated Package / Copper base plate RoHS Directive compliant APPLICATION General purpose Inverters, Servo Amplifiers OUTLINE DRAWING & CIRCUIT DIAGRAM 121.7 118.1 110 0.5 99 94.5 Dimensions in mm 1.15 0.65 4-5.5 MOUNTING HOLES 20.5 17 13 7 (7.4) 1.2 13.09 16.9 28.33 32.14 47.38 51.19 66.43 70.24 81.67 85.48 89.29 93.1 96.91 4.06 0 (3.81) TERMINAL t = 0.8 4.3 4.2 0 54 55 56 57 58 59 60 61 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 3.75 0 30 29 28 27 26 25 24 23 11.66 15.48 23.1 26.9 34.52 38.34 58.4 39 50 0.5 57.5 62 15.48 19.28 30.72 34.52 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 (3) (7.75) 15 18.8 30.24 34.04 45.48 49.28 60.72 64.52 75.96 79.76 91.2 95 A 0.8 0 Pin positions with tolerance 12.5 SECTION A 1.5 2.5 2.1 0.5 0.8 3.5 LABEL P(52~53) P1(54~55) NTC TH1(29) GuP(49) GvP(44) GwP(39) Division of Dimension TH2(28) Tolerance 0.2 0.3 0.5 0.8 1.2 0.5 over 3 6 30 to to to to to 3 6 30 120 400 EuP(48) R(1~2) S(5~6) T(9~10) B(24~25) GB(35) N(57~58) N1(60~61) GuN(34) EvP(43) U(13~14) GvN(33) EwP(38) V(17~18) GwN(32) W(21~22) over over over 120 E(31) * Use both terminals (R/S/T/P/N/P1/B/N1/U/V/W) to the external connection. CIRCUIT DIAGRAM Jan. 2009 MITSUBISHI IGBT MODULES CM75MX-12A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICRM PC IE (Note.3) IERM(Note.3) Parameter Collector-emitter voltage Gate-emitter voltage (Tj = 25C, unless otherwise specified) Conditions G-E Short C-E Short DC, TC = 70C Collector current Pulse Maximum collector dissipation TC = 25C Emitter current TC = 25C (Free wheeling diode forward current) Pulse (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) Rating 600 20 75 150 280 75 150 Unit V A W A BRAKE PART Symbol VCES VGES IC ICRM PC VRRM(Note.3) IF (Note.3) IFRM(Note.3) Parameter Collector-emitter voltage Gate-emitter voltage Conditions G-E Short C-E Short DC, TC = 97C Collector current Pulse Maximum collector dissipation TC = 25C Repetitive peak reverse voltage TC = 25C Forward current Pulse Rating 600 20 50 100 280 600 50 100 Unit V A W V A (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) CONVERTER PART Symbol VRRM Ea IO IFSM I2t Parameter Conditions Repetitive peak reverse voltage Recommended AC input voltage (Note. 1) 3-phase full wave rectifying, TC = 140C DC output current The sine half wave 1 cycle peak value, f = 60Hz, Surge forward current non-repetitive Value for one cycle of surge current Current square time Rating 800 220 75 750 2340 Unit V Vrms A A2S MODULE Symbol Tj Tstg Viso -- -- -- Parameter Junction temperature Storage temperature Isolation voltage Base plate flatness Torque strength Weight Conditions Rating -40 ~ +150 -40 ~ +125 2500 0 ~ +100 2.5 ~ 3.5 270 Unit C Vrms m N*m g Terminals to base plate, f = 60Hz, AC 1 minute (Note. 8) On the centerline X, Y Mounting M5 screw (Typical) Note. 8: The base plate flatness measurement points are in the following figure. - - - Jan. 2009 2 MITSUBISHI IGBT MODULES CM75MX-12A HIGH POWER SWITCHING USE ELECTRICAL CHARACTERISTICS INVERTER PART Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note.3) Qrr (Note.3) Parameter (Tj = 25C, unless otherwise specified) Conditions VCE = VCES, VGE = 0V Collector cutoff current Gate-emitter threshold voltage IC = 7.5mA, VCE = 10V Gate leakage current VGE = VGES, VCE = 0V Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge IC = 75A, VGE = 15V IC = 75A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 75A, VGE = 15V VCC = 300V, IC = 75A VGE = 15V, RG = 8.2 Inductive load (Note. 6) Tj = 25C Tj = 125C Chip (Note. 6) (IE = 75A) IE = 75A, VGE = 0V (Note. 6) Tj = 25C Tj = 125C Chip VEC(Note.3) Emitter-collector voltage Rth(j-c)Q Rth(j-c)R RGint RG IE = 75A, VGE = 0V Thermal resistance per IGBT (Note. 1) (Junction to case) per free wheeling diode Internal gate resistance TC = 25C, per switch External gate resistance Min. -- 5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 8.0 Limits Typ. -- 6 -- 1.7 1.9 1.6 -- -- -- 200 -- -- -- -- -- 1.8 2.0 1.95 1.9 -- -- 0 -- Max. 1 7 0.5 2.1 -- -- 9.3 1.0 0.3 -- 100 100 300 600 200 -- 2.8 -- -- 0.44 0.85 -- 83 Unit mA V A V nF nC ns C V K/W BRAKE PART Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG IRRM(Note.3) Parameter Conditions Min. -- 5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 13 Limits Typ. -- 6 -- 1.7 1.9 1.6 -- -- -- 200 -- 2.0 1.95 1.9 -- -- 0 -- Max. 1 7 0.5 2.1 -- -- 9.3 1.0 0.3 -- 1 2.8 -- -- 0.44 0.85 -- 125 Unit mA V A V VCE = VCES, VGE = 0V Collector cutoff current Gate-emitter threshold voltage IC = 5mA, VCE = 10V Gate leakage current VGE = VGES, VCE = 0V Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Repetitive peak reverse current IC = 50A, VGE = 15V IC = 50A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 50A, VGE = 15V VR = VRRM IF = 50A (Note. 6) Tj = 25C Tj = 125C Chip (Note. 6) Tj = 25C Tj = 125C Chip (Note. 6) nF nC mA V VFM(Note.3) Forward voltage drop Rth(j-c)Q Rth(j-c)R RGint RG IF = 50A per IGBT Thermal resistance (Note. 1) per Clamp diode (Junction to case) TC = 25C Internal gate resistance External gate resistance K/W CONVERTER PART Symbol IRRM VF Rth(j-c) Parameter Conditions Min. -- -- -- Limits Typ. -- 1.2 -- Max. 20 1.6 0.24 Unit mA V K/W Repetitive peak reverse current VR = VRRM, Tj = 150C IF = 75A Forward voltage drop Thermal resistance per Diode (Note. 1) (Junction to case) Jan. 2009 3 MITSUBISHI IGBT MODULES CM75MX-12A HIGH POWER SWITCHING USE NTC THERMISTOR PART Symbol R R/R B(25/50) P25 Parameter Zero power resistance Deviation of resistance B constant Power dissipation Conditions TC = 25C TC = 100C, R100 = 493 Approximate by equation TC = 25C Min. 4.85 -7.3 -- -- Limits Typ. 5.00 -- 3375 -- Max. 5.15 +7.8 -- 10 Unit k % K mW (Note. 7) MODULE Symbol Rth(c-f) Parameter Conditions (Note. 2) Min. -- Limits Typ. 0.015 Max. -- Unit K/W Contact thermal resistance Thermal grease applied (Note. 1) per 1 module (Case to fin) Note.1: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.) 2: Typical value is measured by using thermally conductive grease of = 0.9W/(m*K). 3: IE, IERM, VEC, trr, Qrr and Err represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). IF, IFRM, VF, VRRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part. 4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating. 5: Junction temperature (Tj) should not increase beyond 150C. 6: Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for VCE(sat) and VEC) 1 7: B(25/50) = In( R25 )/( 1 ) T50 R50 T25 R25: resistance at absolute temperature T25 [K]; T25 = 25 [C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]; T50 = 50 [C]+273.15 = 323.15 [K] Chip Location (Top view) (121.7) (110) 84.6 89.6 95.5 98.2 101.2 29.5 39.9 50.3 65.5 71.0 74.6 Dimensions in mm (tolerance: 1mm) 0 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 0 0 54 (62) (50) 25.5 26.5 29.5 42.9 55 56 57 58 59 60 61 CR CR CR S N T N RN CR RP 1 2 3 4 Tr Br Tr Tr Di Tr UP VP B r WP Th Tr D i T r D i T r D i WN UP UN VP VN WP Di Di Di WN UN VN 30 29 28 27 26 25 24 23 CR CR SP T P 5 6 7 8 17.8 27.1 (Tr/UP, Tr/VP, Tr/WP, Th) 27.6 (Di/Br) 33.6 (Tr/WN) 34.7 (Di/UP, Di/VP, Di/WP) 35.2 (Tr/UN, Tr/VN) 41.2 (Di/WN) 42.0 (Di/UN, Di/VN) 9 10 11 12 13 14 15 16 17 18 19 20 21 22 0 26.6 37.0 47.4 64.2 73.0 77.8 81.4 86.1 91.4 97.9 LABEL SIDE Each mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), CR**: Converter diode, Th: NTC thermistor Jan. 2009 4 MITSUBISHI IGBT MODULES CM75MX-12A HIGH POWER SWITCHING USE P1 V VGE = 15V GuP EuP P1 IC VGE = 0V GuP EuP P1 U VGE = 0V GuN E U VGE = 15V GuN E B IC V VGE = 15V GB E IC N1 V N1 N1 P side Inverter part Tr (example of U arm) VG*E* = 0V (GvP-EvP, GwP-EwP, GvN-E, GwN-E, GB-E) N side Inverter part Tr (example of U arm) VG*E* = 0V (GvP-EvP, GwP-EwP, GvN-E, GwN-E, GB-E) VCE(sat) test circuit Br Tr VG*E* = 0V (GuP-EuP, GvP-EvP, GwP-EwP, GuN-E, GvN-E, GwN-E) P1 V VGE = 0V GuP EuP P1 IE VGE = 0V GuP EuP P1 V IF B U U VGE = 0V GuN E VGE = 0V GuN E IE N1 V VGE = 0V GB E N1 P side Inverter part Di (example of U arm) VG*E* = 0V (GvP-EvP, GwP-EwP, GvN-E, GwN-E, GB-E) N side Inverter part Di (example of U arm) VG*E* = 0V (GvP-EvP, GwP-EwP, GvN-E, GwN-E, GB-E) VEC/VFM test circuit N1 Br Di VG*E* = 0V (GuP-EuP, GvP-EvP, GwP-EwP, GuN-E, GvN-E, GwN-E) Arm IE 0V Load VGE 90% 0% IE trr -VGE + VCC IC 90% +VGE 0V -VGE 0A t RG VGE VCE IC 0A td(on) tr td(off) tf Irr 10% 1/2 Irr Qrr = 1/2 Irr trr Switching time test circuit and waveforms trr, Qrr test waveform Jan. 2009 5 MITSUBISHI IGBT MODULES CM75MX-12A HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR CURRENT IC (A) VGE = 20V 15 13 125 100 75 50 Tj = 25C 12 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 150 3.5 VGE = 15V 3 2.5 2 1.5 1 0.5 0 0 25 50 75 Tj = 25C Tj = 125C 100 125 150 11 10 25 0 9 8 0 1 2 3 4 5 6 7 8 9 10 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) Inverter part 103 7 5 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 10 Tj = 25C 8 6 EMITTER CURRENT IE (A) 102 7 5 3 2 4 IC = 75A IC = 150A 2 IC = 30A 0 6 8 10 12 14 16 18 20 101 0 0.5 1 1.5 2 Tj = 25C Tj = 125C 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE CHARACTERISTICS (TYPICAL) Inverter part 101 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 104 7 5 3 2 7 5 3 2 Cies SWITCHING TIME (ns) CAPACITANCE (nF) 103 tf td(off) 100 7 5 3 2 Coes 102 10-1 7 5 3 2 Cres VGE = 0V 10-2 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) tr 101 VGE = 15V 7 5 RG = 8.2 3 Tj = 125C 2 Inductive load 100 0 10 23 5 7 101 td(on) 7 5 3 Conditions: 2 VCC = 300V 2 3 5 7 102 COLLECTOR CURRENT IC (A) Jan. 2009 6 MITSUBISHI IGBT MODULES CM75MX-12A HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 103 7 5 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 101 SWITCHING LOSS (mJ/pulse) SWITCHING TIME (ns) 3 2 tf td(off) Conditions: VCC = 300V 5 VGE = 15V 3 RG = 8.2 Tj = 125C 2 Inductive load 7 102 7 5 td(on) 100 7 5 3 2 Eoff Conditions: tr VCC = 300V 3 VGE = 15V IC = 75A 2 Tj = 125C Inductive load 101 0 10 23 5 7 101 Err Eon 2 3 5 7 102 10-1 0 10 2 3 5 7 101 2 3 5 7 102 GATE RESISTANCE RG () COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) REVERSE RECOVERY CHARACTERISTICS OF FREE WHEELING DIODE (TYPICAL) Inverter part 103 7 Conditions: VCC = 300V 5 VGE = 15V 3 RG = 8.2 Tj = 25C 2 Inductive load 102 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 102 SWITCHING LOSS (mJ/pulse) 7 5 3 2 5 3 2 Eoff Eon Err 100 7 5 3 2 lrr (A), trr (ns) Conditions: VCC = 300V VGE = 15V IC, IE = 75A 101 Tj = 125C 7 Inductive load trr Irr 10-1 0 10 2 3 5 7 101 2 3 5 7 102 101 0 10 2 3 5 7 101 2 3 5 7 102 GATE RESISTANCE RG () EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) Inverter part 20 GATE-EMITTER VOLTAGE VGE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 100 7 Single pulse 5 TC = 25C 3 2 7 5 3 2 IC = 75A VCC = 200V NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c) 15 VCC = 300V 10-1 10 10-2 7 5 3 2 5 0 0 100 200 300 10-3 10-52 3 5710-42 3 5710-32 3 5710-22 3 5710-12 3 57100 2 3 57101 TIME (s) Jan. 2009 7 Inverter IGBT part : Per unit base = Rth(j-c) = 0.44K/W Inverter FWDi part : Per unit base = Rth(j-c) = 0.85K/W Converter-Di part : Per unit base = Rth(j-c) = 0.24K/W Brake IGBT part : Per unit base = Rth(j-c) = 0.44K/W Brake Clamp-Di part : Per unit base = Rth(j-c) = 0.85K/W GATE CHARGE QG (nC) MITSUBISHI IGBT MODULES CM75MX-12A HIGH POWER SWITCHING USE RECTIFIER DIODE FORWARD CHARACTERISTICS (TYPICAL) Converter part COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Brake part 3.5 VGE = 15V 3 2.5 2 1.5 1 0.5 0 Tj = 25C Tj = 125C 0 10 20 30 40 50 60 70 80 90 100 COLLECTOR CURRENT IC (A) 103 FORWARD CURRENT lF (A) 7 5 3 2 102 7 5 3 2 101 7 5 3 2 Tj = 25C Tj = 125C 0 0.5 1.0 1.5 2.0 100 FORWARD VOLTAGE VF (V) CLAMP DIODE FORWARD CHARACTERISTICS (TYPICAL) Brake part 102 FORWARD CURRENT IF (A) 7 5 3 2 101 7 5 3 2 Tj = 25C Tj = 125C 0 0.5 1 1.5 2 2.5 3 3.5 4 100 FORWARD VOLTAGE VF (V) Jan. 2009 8 |
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