 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4745 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Switching Speed APPLICATIONS *Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current- Continuous w w scs .i w 1500 800 6 6 7 16 50 V V .cn mi e V A IC(peak) Collector Current-Peak A IC(surge) Collector Current-Surge Collector Power Dissipation @ TC=25 Junction Temperature A PC W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4745 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA ; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V ICES Collector Cutoff Current VCE= 1500V ; RBE= 0 hFE DC Current Gain tf Fall Time w w. w sem isc IC= 1A ; VCE= 5V ICP= 5A , IB1= 1A; fH= 64kHz .cn i 7 500 A 30 0.4 s isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4745 w w scs .i w .cn mi e isc Websitewww.iscsemi.cn |
Price & Availability of 2SC4745
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |