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| TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/556 DEVICES LEVELS 2N6782 2N6782U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Drain - Source Voltage Gate - Source Voltage Continuous Drain Current Continuous Drain Current Max. Power Dissipation Drain to Source On State Resistance Operating & Storage Temperature Note: (1) Derated Linearly by 0.12 W/C for TC > +25C (2) VGS = 10Vdc, ID = 3.5A TC = +25C TC = +100C Symbol VDS VGS ID1 ID2 Ptl Rds(on) Top, Tstg Value 100 20 3.5 2.25 15 (1) 0.61 (2) Unit Vdc Vdc Adc Adc W C -55 to +150 TO-205AF (formerly TO-39) ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc Gate-Source Voltage (Threshold) VDS VGS, ID = 0.25mA VDS VGS, ID = 0.25mA, Tj = +125C VDS VGS, ID = 0.25mA, Tj = -55C Gate Current VGS = 20V, VDS = 0V VGS = 20V, VDS = 0V, Tj = +125C Drain Current VGS = 0V, VDS = 80V VGS = 0V, VDS = 80V, Tj = +125C Static Drain-Source On-State Resistance VGS = 10V, ID = 2.25A pulsed VGS = 10V, ID = 3.5A pulsed Tj = +125C VGS = 10V, ID = 2.25A pulsed Diode Forward Voltage VGS = 0V, ID = 3.5A pulsed T4-LDS-0064 Rev. 1 (081246) V(BR)DSS VGS(th)1 VGS(th)2 VGS(th)3 IGSS1 IGSS2 IDSS1 IDSS2 rDS(on)1 rDS(on)2 rDS(on)3 VSD 100 2.0 1.0 4.0 5.0 100 200 25 0.25 0.60 0.61 1.08 1.5 nAdc Vdc Vdc Symbol Min. Max. Unit U - 18 LCC Adc mAdc Vdc Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/556 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge SWITCHING CHARACTERISTICS Parameters / Test Conditions Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time Diode Reverse Recovery Time ID = 3.5A, VGS = 10Vdc, Gate drive impedance = 7.5, VDD = 50Vdc di/dt 100A/s, VDD 50V, IF = 3.5A Symbol td(on) tr td(off) tf trr Min. Max. 15 25 25 20 180 Unit Symbol Qg(on) Qgs Qgd Min. Max. 8.1 1.7 4.5 Unit nC VGS = 10V, ID = 3.5A VDS = 50V ns ns T4-LDS-0064 Rev. 1 (081246) Page 2 of 2 |
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