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| T-1 3/4 (5mm) INFRA-RED EMITTING DIODE W53SF4BT Features !MECHANICALLY AND SPECTRALLY MATCHED Description SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. TO THE W51P3C PHOTOTRANSISTOR. !BOTH WATER CLEAR LENS AND BLUE TRANSPARENT LENS AVAILABLE Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice. SPEC NO: DSAD2234 APPROVED: J. Lu REV NO: V.2 CHECKED: Allen Liu DATE: APR/29/2003 DRAWN: K.ZHANG PAGE: 1 OF 3 Selection Guide Par t No . Di c e L en s Ty p e Po (mW/s r ) @ 20 mA *50mA Min . W53SF4BT GaAlAs BLUE TRANSPARENT 4 *7 Ty p . 20 *30 View in g An g l e 21/2 20 20 Notes: 1. 1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value. 2. * Luminous intensity with asterisk is measured at 50mA. Electrical / Optical Characteristics at T)=25C Par ameter Forward Voltage Reverse Current Capacitance Wavelength at peak emission Spectral line half-width P/N S F4 S F4 S F4 S F4 S F4 Sy m b o l VF IR C P 1/2 Ty p . 1.3 90 880 50 Max . 1.6 10 Un i t V uA pF nm nm Co n d i t i o n IF= 2 0 m A V R= 5 V V F= 0 V ; f = 1 M H z IF= 2 0 m A IF= 2 0 m A Absolute Maximum Ratings at T)=25C Item Power Dissipation Forward Current Peak Forward Current[1] Reverse Voltage Operating Temperature Storage Temperature Lead Solder Temperature[2] Notes: 1. 1/100 Duty Cycle, 10us Pulse Width. 2. 2mm below package base. Sy m b o l PT IF i FS VR TA TSTG S F4 100 50 1.2 5 -40~ +85 -40~ +85 260C For 5 Seconds Un i t s mW mA A V C C SPEC NO: DSAD2234 APPROVED: J. Lu REV NO: V.2 CHECKED: Allen Liu DATE: APR/29/2003 DRAWN: K.ZHANG PAGE: 2 OF 3 W53SF4BT SPEC NO: DSAD2234 APPROVED: J. Lu REV NO: V.2 CHECKED: Allen Liu DATE: APR/29/2003 DRAWN: K.ZHANG PAGE: 3 OF 3 |
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