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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1833
DESCRIPTION *Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 4A *High Collector Power Dissipation *Good Linearity of hFE *Wide Area of Safe Operation
APPLICATIONS *Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
w
ww
scs .i
VALUE 100 V 80 V 5 V 7 A 10 A 1.5 W
UNIT
.cn mi e
ICM
Collector Current-Pulse Collector Power Dissipation @ Ta=25
PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 30
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= 1mA; IB= 0
B
2SD1833
MIN 80 100 5
TYP.
MAX
UNIT V V V
IC= 50A; IE= 0 IE= 50A; IC= 0 IC= 4A; IB= 0.4A
B
1.0 1.5 10 10 320 5 150
V V A A
IC= 4A; IB= 0.4A
B
Current-Gain--Bandwidth Product Output Capacitance
hFE Classifications D 60-120 E 100-200
w w
F 160-320
w.
.cn mi cse is
VCB= 100V; IE= 0 VEB= 4V; IC= 0 IC= 1A; VCE= 5V 60 IE= -0.5A; VCE= 5V IE= 0; VCB= 10V; ftest= 1.0MHz
MHz pF
isc Websitewww.iscsemi.cn
2


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