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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1833 DESCRIPTION *Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 4A *High Collector Power Dissipation *Good Linearity of hFE *Wide Area of Safe Operation APPLICATIONS *Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w ww scs .i VALUE 100 V 80 V 5 V 7 A 10 A 1.5 W UNIT .cn mi e ICM Collector Current-Pulse Collector Power Dissipation @ Ta=25 PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 30 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= 1mA; IB= 0 B 2SD1833 MIN 80 100 5 TYP. MAX UNIT V V V IC= 50A; IE= 0 IE= 50A; IC= 0 IC= 4A; IB= 0.4A B 1.0 1.5 10 10 320 5 150 V V A A IC= 4A; IB= 0.4A B Current-Gain--Bandwidth Product Output Capacitance hFE Classifications D 60-120 E 100-200 w w F 160-320 w. .cn mi cse is VCB= 100V; IE= 0 VEB= 4V; IC= 0 IC= 1A; VCE= 5V 60 IE= -0.5A; VCE= 5V IE= 0; VCB= 10V; ftest= 1.0MHz MHz pF isc Websitewww.iscsemi.cn 2 |
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