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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5517 DESCRIPTION *High Breakdown VoltageVCBO= 1700V (Min) *High Switching Speed *Wide Area of Safe Operation *Built-in Damper Diode APPLICATIONS *Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current- Continuous w w scs .i w 1700 V 1700 V 7 V 6 A 12 A 3 A 3 W .cn mi e ICM Collector Current- Peak IB B Base Current- Continuous Collector Power Dissipation @ Ta=25 PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 40 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5517 TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A VCB= 1000V; IE= 0 VCB= 1700V; IE= 0 IC= 4.5A; VCE= 5V 5 1.5 50 1.0 9 V A mA ICBO Collector Cutoff Current hFE DC Current Gain fT Current-Gain--Bandwidth Product IC= 0.1A; VCE= 10V VECF C-E Diode Forward Voltage Switching Times tstg Storage Time tf Fall Time w w. w IF= 4.5A sem isc .cn i 3 MHz 2.0 V 5.0 s IC= 4.5A; IB1= 0.9A; IB2= -1.8A 0.5 s isc Websitewww.iscsemi.cn 2 |
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