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| HWC27YC C-Band Power FET Via Hole Chip Autumn 2002 V1 Features * * * * Outline Dimensions 650 Low Cost GaAs Power FET Class A or Class AB Operation 18 dB Typical Gain at 2.4GHz 5V to 10V Operation Source 435 1 3 Description The HWC27YC is a medium power GaAs FET designed for various RF and microwave applications. 215 2 4 Absolute Maximum Ratings VDS VGS ID IG TCH TSTG PT * Source Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation +15V -5V IDSS 2mA 175C -65 to +175C 3.5W 0.0 0.0 58.5 344.5 400 Unit: m Thickness: 50 5 Chip size 50 Bond Pads 1-2 (Gate): Bond Pads 3-4 (Drain): 60 x 60 60 x 60 * mounted on an infinite heat sink Electrical Specifications (TA=25C) f = 2.4 GHz for all RF Tests Symbol IDSS Parameters & Conditions Saturated Current at VDS=3V, VGS=0V Units mA Min. 300 Typ. 400 Max. 600 VP Pinch-off Voltage at VDS=3V, ID=20mA V -3.5 -2.0 -1.5 gm P1dB Transconductance at VDS=3V, ID=200mA Power Output at Test Points VDS=10V, ID=0.5 IDSS Gain at 1dB Compression Point VDS=10V, ID=0.5 IDSS Power-Added Efficiency (POUT = P1dB) VDS=10V, ID=0.5 IDSS mS - 250 - dBm 27 28 - G1dB dB 16 17 - PAE % - 40 - Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. HWC27YC C-Band Power FET Via Hole Chip Autumn 2002 V1 Small Signal Common Source Scattering Parameters S-MAGN AND ANGLES VDS=10V, IDS=0.5IDSS (GHz) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 lS11l 0.912 0.906 0.900 0.900 0.899 0.901 0.903 0.907 0.910 0.911 0.911 0.915 0.919 0.918 0.917 0.916 0.914 ANG -118.90 -128.90 -138.90 -144.50 -150.20 -153.70 -157.20 -159.90 -162.50 -164.20 -165.80 -167.20 -168.50 -169.90 -171.40 -172.00 -172.60 lS21l 5.295 4.540 3.784 3.335 2.886 2.585 2.284 2.072 1.860 1.696 1.533 1.413 1.293 1.200 1.107 1.037 0.966 ANG 104.40 95.77 87.16 80.57 73.98 68.26 62.54 57.40 52.26 47.77 43.27 39.22 35.17 31.33 27.50 24.27 21.04 lS12l 0.024 0.025 0.026 0.026 0.025 0.025 0.024 0.024 0.023 0.023 0.022 0.022 0.021 0.022 0.022 0.022 0.022 ANG 35.50 31.08 26.65 25.72 24.78 25.24 25.70 26.84 27.98 29.32 30.66 32.61 34.55 37.37 40.20 41.37 42.54 lS22l 0.413 0.409 0.404 0.410 0.416 0.429 0.441 0.468 0.495 0.521 0.547 0.573 0.598 0.626 0.654 0.671 0.688 ANG -35.82 -42.72 -49.62 -56.64 -63.65 -70.99 -78.33 -84.84 -91.35 -95.72 -100.10 -103.80 -107.60 -110.00 -112.50 -114.00 -115.60 Bonding Manner Gate, drain pad: 1 wire on each pad Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. |
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