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| NPN BCY58 - BCY59 SILICON PLANAR EPITAXIAL TRANSISTORS The BCY58 and BCY59 are NPN transistors mounted in TO-18 metal package with the collector connected to the case . They are designed for use in audio drive and low-noise input stages. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCES VEBO IC IB PD PD TJ TStg Ratings Collector-Emitter Voltage(1) Collector-Emitter Voltage (VBE =0) Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature range @ Tamb = 45 @ Tcase= 45 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 Value 45 32 45 32 7 7 200 50 0.39 1 200 -65 to +150 Unit V V V mA mA mW Watts C C (1) Applicable up to IC = 500mA THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to mounting base Thermal Resistance, Junction to ambient in free air BCY59 BCY58 BCY59 BCY58 Value 450 150 Unit C/W C/W COMSET SEMICONDUCTORS 1/4 NPN BCY58 - BCY59 ELECTRICAL CHARACTERISTICS Tj=25C unless otherwise specified Symbol ICES ICES IEBO VCEO VEBO VCE(SAT) Ratings Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Test Condition(s) VCB =45 V, VBE =0V VCB =32 V, VB =0V VCB =45 V VBE =0V,Tamb =150C VCB =32 V VBE =0V,Tamb =150C VBE =5.0 V, IC =0 Min Typ 0.12 04 0.7 0.85 0.5 0.7 0.76 BCY59IX BCY58IX >40 Typ.190 >250 <460 >160 <630 >60 >250 <500 Mx 10 10 10 0.25 08 Unit nA A nA V V BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 45 32 7 0.6 0.7 0.2 0.55 - Collector Emitter Breakdown IC =2 mA, IB =0 Voltage Emitter Base Breakdown IE =1A, IC =0 Voltage Collector-Emitter saturation Voltage IC =10 mA, IB =0.25 mA IC =100 mA, IB =2.5 mA IC =10 mA, IB =0.25 mA IC =100 mA, IB =2.5 mA IC =10 A, VCE =5 V IC =20 A, VCE =VCE max Tj =100C V 0.85 1.2 0.7 BCY59X BCY58X >60 Typ.300 >380 <630 >240 <1000 >60 >350 <700 V VBE(SAT) Base-Emitter Saturation Voltage VBE Base-Emitter Voltage IC =2 mA, VCE =5 V IC =10 mA, VCE =1 V IC =100 mA, VCE =1 V IC =10 A, VCE =5 V hFE DC Current Gain IC =10 A, VCE =5 V IC =10 mA, VCE =1 V hfe Small-Signal Current Gain IC =100 mA, VCE =1 V IC =2 mA, VCE =5 V, f = 1kHz BCY59VII BCY58VII Typ.20 >120 <220 >80 >40 >125 <250 BCY59VIII BCY58VIII >20 Typ.95 >180 <310 >120 <400 >45 >175 <350 COMSET SEMICONDUCTORS 2/4 NPN BCY58 - BCY59 Symbol fT F td tr ton ts tf toff td tr ton ts tf toff CC CE Ratings Transition frequency Noise figure , RS=2k Delay time Rise time Turn on time Storage time Fall time Turn off time Delay time Rise time Turn on time Storage time Fall time Turn off time Collector capacitance Emitter capacitance Test Condition(s) IC =10 mA, VCE =5 V f = 100MHz IC =200 A, VCE =5 V f = 1kHz, B =200Hz Min 150 - Typ Mx 2 35 50 85 400 80 480 5 50 55 250 200 450 6 150 Unit MHz db IC=10 mA , IB =1 mA -IBM =1 mA, VBB=3.6 V R1= R2 = 5k RL= 990 IC=100 mA , IB =10 mA -IBM =10 mA, VBB =5 V R1 = 500 , R1 = 700 RL= 990 IE = Ie = 0 ,VCB =10 V f = 1MHz IC = Ic = 0 ,VEB =0.5 V f = 1MHz BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 ns 800 150 ns 800 5 15 pF pF COMSET SEMICONDUCTORS 3/4 NPN BCY58 - BCY59 MECHANICAL DATA CASE TO-18 DIMENSIONS mm A B D E F G H I L Pin 1 : Pin 2 : Pin 3 : 12,7 0,49 5,3 4,9 5,8 2,54 1,2 1,16 45 inches 0,5 0,019 0,208 0,193 0,228 0,1 0,047 0,045 45 emitter base Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 4/4 |
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