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APTGT580U60D4G
Single switch Trench + Field Stop IGBT Power Module
1
VCES = 600V IC = 600A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * * * * Kelvin emitter for easy drive M6 connectors for power M4 connectors for signal High level of integration
3 5 2
Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 600 760 580 800 20 1600 1200A@550V Unit V A V W
July, 2008 1-5 APTGT580U60D4G - Rev 0
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT580U60D4G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE = 15V IC = 600A Tj = 125C VGE = VCE , IC = 10mA VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 1 1.9 6.5
2400
Unit mA V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=-8/+15V, IC=600A VCE=300V Inductive Switching (25C) VGE = 15V VBus = 300V IC = 600A RG = 1.5 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 600A RG = 1.5 VGE = 15V Tj = 150C VBus = 300V IC = 600A Tj = 150C RG = 1.5 VGE 15V ; VBus = 360V tp = 6s ; Tj = 150C Min Typ 37 2.3 1.1 4.4 250 70 550 70 270 80 650 80 7.5 mJ 30 3000 A Max Unit nF C
ns
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRRM IF VF trr Qrr Err Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 600A VR = 300V IF = 600A VGE = 0V Test Conditions VR=600V Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Min 600 Typ Max 750 1000 600 1.6 1.5 150 250 27 60 6.4 14 2.1 Unit V A A V
July, 2008 2-5 APTGT580U60D4G - Rev 0
ns C mJ
di/dt =8600A/s
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APTGT580U60D4G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight M6 M4 IGBT Diode 2500 -40 -40 -40 3 1 Min Typ Max 0.09 0.13 175 125 125 5 2 350 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
D4 Package outline (dimensions in mm)
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APTGT580U60D4G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 1200
TJ = 150C VGE=19V
1200
TJ=25C
1000
IC (A)
1000
TJ=150C
800 600 400 200 0 0 0.5 1
TJ=25C
800 IC (A) 600 400
VGE=13V VGE=15V
VGE=9V
200 0
1.5 VCE (V)
2
2.5
3
0
0.5
1
1.5 2 VCE (V)
2.5
3
3.5
1200 1000 800 600 400 200 0 5
Transfert Characteristics 40
TJ=25C
Energy losses vs Collector Current
VCE = 300V VGE = 15V RG = 1.5 TJ = 150C Eoff
30 E (mJ) 20 10
IC (A)
Err
TJ=125C TJ=150C TJ=25C
Eon
0 11 12 0 150 300 450 IC (A) Reverse Bias Safe Operating Area 1400 1200 1000 IF (A) 600 750 900
6
7
8
9
10
VGE (V) Switching Energy Losses vs Gate Resistance 80 70 60 E (mJ) 50 40 30 20 10 0 0 2.5 5 7.5 Gate Resistance (ohms) 10
Eon Err VCE = 300V VGE =15V IC = 600A TJ = 150C Eoff Eon
800 600 400 200 0 0 100 200 300 400 500 600 700 VCE (V)
VGE=15V TJ=150C RG=1.5
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.1 Thermal Impedance (C/W) 0.08 0.06 0.04 0.02 0.9 0.7
IGBT
0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
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APTGT580U60D4G - Rev 0
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0.5
APTGT580U60D4G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 50
ZCS
Forward Characteristic of diode 1200
40 30 20 10 0 100
Hard switching ZVS
VCE=300V D=50% RG=1.5 TJ=150C
1000 800 IF (A) 600 400 200
TJ=25C TJ=150C
Tc=85C
0 200 300 400 500 IC (A) 600 700 800 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.14 Thermal Impedance (C/W) 0.12 0.1 0.08 0.06 0.04 0.02 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.05 0 0.00001 0.9 0.7 0.5 0.3
Diode
Rectangular Pulse Duration in Seconds
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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Microsemi reserves the right to change, without notice, the specifications and information contained herein
July, 2008

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