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Advance Technical Information
GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK210N17T IXFX210N17T
RDS(on) trr
TO-264 (IXFK)
VDSS ID25
= =
170V 210A 7.5m 200ns
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 175C
Maximum Ratings 170 170 20 30 210 160 580 100 2 1150 20 -55 ... +175 175 -55 ... +175 V V V V A A A A J W V/ns C C C C C Nm/lb.in. N/lb. g g
G = Gate S = Source D TAB = Drain = Drain
G D S
(TAB)
PLUS247 (IXFX)
(TAB)
Features International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Easy to Mount Space Savings High Power Density
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247)
300 260 1.13/10 20..120 /4.5..27 10 6
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 4mA VGS = 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A, Note 1 TJ = 150C
Characteristic Values Min. Typ. Max. 170 2.5 5.0 200 V V nA
Applications Synchronous Recification DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications
50 A 3 mA 7.5 m
(c) 2009 IXYS CORPORATION, All Rights Reserved
DS100138(03/09)
IXFK210N17T IXFX210N17T
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.15 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 85 140 18.8 2110 260 45 40 48 32 285 78 80 0.13 S nF pF pF ns ns ns ns nC nC nC C/W C/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
TO-264 (IXFK) Outline
Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 60A, VGS = 0V, Note 1 IF = 105A, -di/dt = 100A/s VR = 75V, VGS = 0V 0.56 9.00 Characteristic Values Min. Typ. Max. 210 840 1.3 200 A A V ns C A
PLUS 247TM (IXFX) Outline
Note 1: Pulse Test, t 300s; Duty Cycle, d 2%.
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
7,157,338B2
6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537
IXFK210N17T IXFX210N17T
Fig. 1. Output Characteristics @ 25C
220 200 180 160 VGS = 10V 8V 7V 350 300 250 VGS = 10V 8V 7V
Fig. 2. Extended Output Characteristics @ 25C
ID - Amperes
ID - Amperes
140 120 100 80 60 40 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 5V 6V
200 150 100 50 5V 0 0 1 2 3 4 5 6 7 8 9 10 6V
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ 150C
220 200 180 160 VGS = 10V 8V 7V 3.0 2.8 2.6 2.4
Fig. 4. RDS(on) Normalized to ID = 105A Value vs. Junction Temperature
VGS = 10V
RDS(on) - Normalized
2.2 2.0 1.8 1.6 1.4 1.2 1.0
I D = 210A I D = 105A
ID - Amperes
140 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5
6V
5V
0.8 0.6 0.4 3.0 3.5 4.0 -50 -25 0 25 50 75 100 125 150 175
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 105A Value vs. Drain Current
3.4 3.2 3.0 2.8 TJ = 175C 140 120 100 80 60 TJ = 25C 40 20 0 0 50 100 150 200 250 300 350 -50 VGS = 10V 180 160
Fig. 6. Drain Current vs. Case Temperature
External Lead Current Limit
RDS(on) - Normalized
2.6 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6
ID - Amperes
2.4
-25
0
25
50
75
100
125
150
175
ID - Amperes
TC - Degrees Centigrade
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF:F_210N17T(9W)4-02-09
IXFK210N17T IXFX210N17T
Fig. 7. Input Admittance
240 220 200 180 240 220 200 180 25C TJ = - 40C
Fig. 8. Transconductance
140 120 100 80 60 40 20 0 3.0 3.5 4.0
g f s - Siemens
160
ID - Amperes
160 140 120 100 80 60 40 20 0 150C
TJ = 150C 25C - 40C
4.5
5.0
5.5
6.0
6.5
0
25
50
75
100
125
150
175
200
225
250
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
350 300 8 250 7 10 9 VDS = 85V I D = 105A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
VGS - Volts
TJ = 150C TJ = 25C
200
6 5 4 3 2 1
150 100 50 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0 0 25 50 75 100 125 150 175 200 225 250 275 300
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100,000 1,000
Fig. 12. Forward-Bias Safe Operating Area
f = 1 MHz
RDS(on) Limit Ciss 25s
Capacitance - PicoFarads
10,000
100
ID - Amperes
100s
Coss
1,000 Crss
10 TJ = 175C TC = 25C Single Pulse
1ms
100 0 5 10 15 20 25 30 35 40
1 1 10 100 1000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK210N17T IXFX210N17T
Fig. 13. Maximum Transient Thermal Impedance
1.000
Z (th )J C - C / W
0.100
0.010
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF:F_210N17T(9W)4-02-09

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