|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
PD - 97335 IRFH7921PBF Applications l HEXFET(R) Power MOSFET l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Neworking & Computing Systems Optimized for Control FET Applications VDSS 30V RDS(on) max Qg 8.5m@VGS = 10V 9.3nC Benefits l l l l l l l l Very low RDS(ON) at 4.5V VGS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free (Qualified up to 260C Reflow) RoHS compliant (Halogen Free) Low Thermal Resistance Large Source Lead for more reliable Soldering D D D D S S S G PQFN Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 20 15 12 34 120 3.1 Units V g Power Dissipation g Power Dissipation c A W W/C C Linear Derating Factor Operating Junction and g 2.0 0.025 -55 to + 150 Storage Temperature Range Thermal Resistance Parameter RJC RJA Junction-to-Case f Typ. --- --- Max. 7.9 40 Units C/W Junction-to-Ambient g Notes through are on page 9 www.irf.com 07/15/08 1 IRFH7921PBF BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units 30 --- --- --- 1.35 --- --- --- --- --- 27 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.02 7.1 10.4 1.8 -6.2 --- --- --- --- --- 9.3 2.2 1.2 3.2 2.7 4.4 5.0 1.4 12 7.6 14 4.7 1210 240 120 --- --- 8.5 12.5 2.35 --- 1.0 150 100 -100 --- 14 --- --- --- --- --- --- 2.4 --- --- --- --- --- --- --- pF nC nC VDS = 15V VGS = 4.5V ID = 12A V Conditions VGS = 0V, ID = 250A VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A V/C Reference to 25C, ID = 1mA m V mV/C A nA S e e VDS = VGS, ID = 25A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 12A See Fig.17 & 18 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ns ID = 12A RG=1.8 See Fig.15 VGS = 0V VDS = 15V = 1.0MHz Avalanche Characteristics EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current d Typ. --- --- Max. 29 12 Units mJ A Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units --- --- --- --- --- --- --- --- 12 11 3.9 A 120 1.0 18 17 V ns nC Conditions MOSFET symbol showing the integral reverse G S D p-n junction diode. TJ = 25C, IS = 12A, VGS = 0V TJ = 25C, IF = 12A, VDD = 15V di/dt = 300A/s e eA Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFH7921PBF 1000 1000 60s PULSE WIDTH Tj = 25C TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 10 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 60s PULSE WIDTH Tj = 150C 100 TOP BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 10 1 0.1 2.3V 0.01 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 1 2.3V 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 RDS(on) , Drain-to-Source On Resistance 1.6 ID = 15A 1.4 VGS = 10V ID, Drain-to-Source Current (A) 100 10 TJ = 150C T J = 25C VDS = 15V 60s PULSE WIDTH 1 2 3 4 5 6 (Normalized) 1.2 1.0 1 0.8 0.1 0.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3 IRFH7921PBF 10000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd 5.0 ID= 12A VGS , Gate-to-Source Voltage (V) 4.0 VDS= 24V VDS= 15V C, Capacitance (pF) Ciss 1000 3.0 2.0 Coss Crss 100 1 10 VDS, Drain-to-Source Voltage (V) 100 1.0 0.0 0 2 4 6 8 10 12 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 100sec 1msec 10 DC 1 T A = 25C Tj = 150C Single Pulse 0.1 0 1 10 100 10msec 10 T J = 150C T J = 25C 1 VGS = 0V 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFH7921PBF 16 VGS(th) , Gate Threshold Voltage (V) 2.5 14 12 ID, Drain Current (A) 2.0 10 8 6 4 2 0 25 50 75 100 125 150 T J , Junction Temperature (C) 1.5 ID = 25A 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 9. Maximum Drain Current vs. Ambient Temperature Fig 10. Threshold Voltage vs. Temperature 100 Thermal Response ( Z thJA ) C/W D = 0.50 10 0.20 0.10 0.05 0.02 0.01 1 J R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 A 4 A Ri (C/W) 2.4768 6.6412 15.997 14.892 0.000496 0.014506 0.80399 34.4 i (sec) 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 1 2 3 4 Ci= i/Ri Ci= i/Ri 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 0.001 0.01 0.1 1 10 100 0.001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRFH7921PBF RDS(on), Drain-to -Source On Resistance (m ) 20 18 16 14 12 10 8 6 4 0 2 4 6 8 10 12 14 16 18 20 T J = 25C 120 EAS , Single Pulse Avalanche Energy (mJ) ID = 15A 100 80 60 40 20 0 25 50 75 ID TOP 2.2A 3.1A BOTTOM 12A T J = 125C 100 125 150 VGS, Gate -to -Source Voltage (V) Starting T J , Junction Temperature (C) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current 15V V DS V GS RD VDS L DRIVER RG V10V GS Pulse Width 1 s Duty Factor 0.1 D.U.T. + -V DD RG 20V D.U.T IAS tp + V - DD A 0.01 Fig 14a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 15a. Switching Time Test Circuit 90% VDS 10% VGS I AS td(on) tr td(off) tf Fig 14b. Unclamped Inductive Waveforms Fig 15b. Switching Time Waveforms 6 www.irf.com IRFH7921PBF D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt - + RG * dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Current Regulator Same Type as D.U.T. Vds Vgs Id 50K 12V .2F .3F D.U.T. VGS 3mA + V - DS Vgs(th) IG ID Qgs1 Qgs2 Qgd Qgodr Current Sampling Resistors Fig 17. Gate Charge Test Circuit Fig 18. Gate Charge Waveform www.irf.com 7 IRFH7921PBF PQFN Package Details PQFN Part Marking INTERNATIONAL RECTIFIER LOGO 6 DATE CODE XXXX ASSEMBLY SITE CODE (Per SCOP 200-002) PART NUMBER MARKING CODE (Per Marking Spec.) XYWWX XXXXX PIN 1 IDENTIFIER LOT CODE (Eng Mode - Min. last 4 digits of EATI #) (Prod Mode - 4 digits SPN code) TOP MARKING (LASER) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRFH7921PBF PQFN Tape and Reel Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.39mH, RG = 25, IAS = 12A. Pulse width 400s; duty cycle 2%. Rthjc is guaranteed by design When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/08 www.irf.com 9 |
Price & Availability of IRFH7921PBF |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |