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| AMMP-6233 18 to 32 GHz GaAs Low Noise Amplifier Data Sheet Description Avago Technologies' AMMP-6233 is a high gain, lownoiseamplifierthatoperatesfrom18GHzto32GHz.It hasa3dBnoisefigure,over20dBofgainanddesigned tobeaneasy-to-usedrop-inwithanysurfacemountPCB application.Popularapplicationsincludemicrowaveradios,802.16andsatelliteVSATorDBSreceivers.Thefully integrated microwave circuit eliminated the complex tuning and assembly processes typically required by hybrid(discrete-FET)amplifiers.Thesurfacemountpackageallowseliminationof"chip&wire"assemblyforlower cost.Thedevicehas50inputandoutputmatchand isunconditionallystable.TheMMIChasfullyintegrated inputandoutputDCblockingcapacitorsandbiaschoke. ThebacksideofthepackageisbothRFandDCground that simplifies the assembly process. It is fabricated in aPHEMTprocesstoprovideexceptionallownoiseand gainperformance. Features * SurfaceMountPackage,5.0x5.0x1.25mm * IntegratedDCblockandchoke * 50InputandOutputMatch * SinglePositiveSupplyPin * NoNegativeGateBias Specifications (Vd=3.0V, Idd=65mA) * BroadbandRFfrom18to32GHz * HighGainof23dB * LowGainFlatness:1dB * TypicalNoiseFigureof2.6dB * TypicalOIP3of19dBm Pin Connections (Top View) 1 2 3 Pin 1 2 3 4 5 6 7 8 Function Vdd RFout Applications * MicrowaveRadiosystems * SatelliteVSAT,DBSUp/DownLink * LMDS&Pt-PtmmWLongHaul * BroadbandWirelessAccess (including802.16and802.20WiMax) * WLLandMMDSloops * Commercialgrademilitary 8 4 7 6 5 RFin Note: these devices are esd seNsitive. the followiNg precautioNs are stroNgly recommeNded. eNsure that aN esd approved carrier is used wheN uNits are traNsported from oNe destiNatioN to aNother. persoNal grouNdiNg is to be worN at all times wheN haNdliNg these devices. the maNufacturer assumes No respoNsibilities for esd damage due to improper storage aNd haNdliNg of these devices. Absolute Maximum Ratings (1) Sym Vd Id Pin Tch Tstg DC Specifications/ Physical Properties (2) Unit V mA dBm C C C Parameters/Condition DraintoGroundVoltage DrainCurrent RFCWInputPowerMax Maxchanneltemperature Storagetemperature Max 5.5 100 10 +150 -65+150 260for20s Sym Idd Parameter and Test Condition DrainSupplyCurrentunderanyRF powerdriveandtemp. (Vdd=3.0V) DrainSupplyVoltage ThermalResistance(3) Unit mA Min 40 Typ 65 Max 90 Vd qjc V C/W 3 27 5 Tmax MaximumAssemblyTemp Notes: 1. Operationinexcessofanyoftheseconditionsmayresultinpermanentdamagetothisdevice.Theabsolutemaximumratingsfor Vd,IdandPinweredeterminedatanambienttemperatureof25C unlessnotedotherwise. Notes: 2. AmbientoperationaltemperatureTA=25Cunlessnoted 3. Channel-to-backsideThermalResistance(Tchannel=34C)asmeasured using infrared microscopy.Thermal Resistance at backside temp.(Tb)=25Ccalculatedfrommeasureddata. AMMP-6233 RF Specifications (4,5,6) Symbol Freq Gain TA=25C,Vdd=3.0V,Idd=65mA,Zin=Zo=50 Parameters and Test Conditions OperationalFrequency RFSmallSignalGain Freq 18GHz 26GHz 29GHz NF NoiseFigureinto50 18GHz 26GHz 29GHz Rlin Rlout Iso P1dB OIP3 InputReturnLoss OutputReturnLoss Isolation OutputPowerat1dBgaincompression OutputThirdOrderInterceptPoint Units GHz dB dB dB dB dB dB dB dB dB dBm dBm -10 -13 -45 8 18 Min. 18 19 20.8 20 Typ. 23.2 24.4 23.6 2.6 2.2 2.6 3.6 3.2 3.5 Max. 32 Notes: 4. Small/Large-signaldatameasuredinafullyde-embeddedtestfixtureformTA=25C. 5. Specificationsarederivedfrommeasurementsina50testenvironment.Aspectsoftheamplifierperformancemaybeimprovedoveranarrowerbandwidthbyapplicationofadditionalconjugate,linearity,orlownoise(Gopt)matching. 6. Alltestedparametersguaranteedwithmeasurementaccuracy+/-0.5dBforNFand+/-1dBforgainat18GHz,26GHzand+/-1.5dBforgainat 29GHz. AMMP-6233 Typical Performance [1], [2] 25 (TA=25C,Vdd=3V,Idd=65mA,Zin=Zout=50unlessnoted) 6.0 5.0 NoiseFigure(dB) 4.0 3.0 2.0 1.0 0.0 15 20 25 Frequency(GHz) 30 35 18 20 22 24 26 28 30 32 Frequency(GHz) 20 S21(dB) 15 10 5 0 Figure 1. Gain 0 Figure 2. Noise Figure 25 OP1dB&OIP3(dBm) 20 15 10 5 0 OP-1dB OIP3 18 20 22 24 26 28 30 32 -5 -10 S11(dB) -15 -20 -25 -30 15 20 25 Frequency(GHz) 30 35 Frequency(GHz) Figure 3. Input Return Loss 0 -5 -10 S22(dB) -15 -20 -25 -30 15 20 25 Frequency(GHz) 30 35 Figure 4. Output P-1dB and Output IP3 0 -10 -20 S12(dB) -30 -40 -50 -60 15 20 25 Frequency(GHz) 30 35 Figure 5. Output Return Loss Figure 6. Isolation AMMP-6233 Typical Performance (cont) [1], [2] 25 20 (TA=25C,Vdd=3V,Idd=65mA,Zin=Zout=50unlessnoted) 6.0 5.0 NoiseFigure(dB) 4.0 3.0 2.0 1.0 0.0 18 20 22 24 26 28 30 3V 4V 5V 32 S21(dB) 15 10 5 0 16 18 20 22 24 26 28 30 32 Frequency(GHz) 3V 4V 5V Frequency(GHz) Figure 7. Gain over Vdd 25 Figure 8. Noise Figure over Vdd 6.0 NoiseFigure(dB) 5.0 4.0 3.0 2.0 1.0 32 0.0 18 20 22 24 26 28 Frequency(GHz) 30 32 -40C +25C +85C 20 S21(dB) 15 10 5 0 16 18 20 22 24 26 28 30 Frequency(GHz) 25C -40C 85C Figure 9. Gain over Temperature 80 75 70 65 60 3 3.5 4 Vdd(V) 4.5 5 Figure 10. Noise Figure over Temperature 25 20 OIP3(dBm) 15 10 5 0 18 20 22 24 26 28 30 32 3V 4V 5V Idd(mA) Frequency(GHz) Figure 11. Idd over Vdd Figure 12. Output IP3 over Vdd Note: 1. S-parametersaretakenwiththeEvaluationBoardasshowninFigure14.Effectsofboardandconnectorareincludedinthegraphs.Lossof boardandconnectorarede-embededfromGaindata. 2. NoiseFigureismeasuredwitha3-dBpadattheinputofthedevice.Lossesarede-embededfromthedatashowninFigure2,8and10. AMMP-6233 Application and Usage Vdd 0.1uF 3 Biasing and Operation TheAMMP-6233isnormallybiasedwithapositivedrain supplyconnectedtotheVDDpinthrougha0.1uFbypass capacitorasshowninFigure13.Therecommendeddrain supplyvoltageis3V.Itisimportanttohave0.1uFbypass capacitor,andthecapacitorshouldbeplacedascloseto thecomponentaspossible.Inputandoutputportsare DC-blocked.Impedancematchingatinputandoutput portsareachievedon-chip,therefore,noextraexternal componentisneeded.Aspectsoftheamplifierperformancemaybeimprovedoveranarrowerbandwidthby applicationofadditionalconjugate,linearity,orlownoise (opt)matchingNogroundwiresareneededbecauseall groundconnectionsaremadewithplatedthrough-holes tothebacksideofthepackage. RefertheAbsoluteMaximumRatingstableforallowed DCandthermalcondition 1 2 RFin RFout 8 7 6 5 AMMP-6233 Figure 13. Application of AMMP-6233 Figure 14. Evaluation / Test Board (Available to qualified customer requests) Vcc 4 Out In Figure 15. Simplified LNA Schematic Recommended SMT Attachment for 5x5 Package Figure 16a. PCB Land Pattern Figure 16b. PCB Stencil Layouts NOTES: DIMENSIONSAREININCHES[MILIMETERS] ALLGROUNDSMUSTBESOLDEREDTOPCBRF MaterialisRogersRO4350,0.010"thick Figure 16c. PCB Land Pattern with Stencil Layouts TheAMMPPackagedDevicesarecompatiblewithhigh volumesurfacemountPCBassemblyprocesses. The PCB material and mounting pattern, as defined in thedatasheet,optimizesRFperformanceandisstrongly recommended.Anelectronicdrawingofthelandpattern is available upon request from Avago Sales & ApplicationEngineering. Manual Assembly * FollowESDprecautionswhilehandlingpackages. * Handlingshouldbealongtheedgeswithtweezers. * Recommended attachment is conductive solder paste.Pleaseseerecommendedsolderreflowprofile. NeitherConductiveepoxyorhandsolderingisrecommended. * Applysolderpasteusingastencilprinterordotplacement.Thevolumeofsolderpastewillbedependenton PCBandcomponentlayoutandshouldbecontrolled toensureconsistentmechanicalandelectricalperformance. * Followsolderpasteandvendor'srecommendations whendevelopingasolderreflowprofile.Astandard profile will have a steady ramp up from room temperaturetothepre-heattemp.toavoiddamagedue tothermalshock. * Packages have been qualified to withstand a peak temperatureof260Cfor20seconds.Verifythatthe profilewillnotexposedevicebeyondtheselimits. 300 250 Temp(C) 200 150 100 50 0 Ramp1 0 50 Preheat Ramp2 100 Reflow 200 Cooling 250 300 150 Seconds Peak=2505C Meltingpoint=218C Aproperlydesignedsolderscreenorstencilisrequired toensureoptimumamountofsolderpasteisdeposited ontothePCBpads.Therecommendedstencillayoutis showninFigure16.Thestencilhasasolderpastedepositionopeningapproximately70%to90%ofthePCB pad. Reducing stencil opening can potentially generatemorevoidsunderneath.Ontheotherhand,stencil openingslargerthan100%willleadtoexcessivesolder pastesmearorbridgingacrosstheI/Opads.Considering thefactthatsolderpastethicknesswilldirectlyaffectthe qualityofthesolderjoint,agoodchoiceistousealaser cutstencilcomposedof0.127mm(5mils)thickstainless steel which is capable of producing the required fine stenciloutline. The most commonly used solder reflow method is accomplished in a belt furnace using convection heat transfer. The suggested reflow profile for automated reflow processes is shown in Figure 17. This profile is designed to ensure reliable finished joints. However, theprofileindicatedinFigure1willvaryamongdifferent solderpastesfromdifferentmanufacturersandisshown hereforreferenceonly. Figure 17. Suggested Lead-Free Reflow Profile for SnAgCu Solder Paste Package, Tape & Reel, and Ordering Information .011 Back View Carrier Tape and Pocket Dimensions AMMP-6233 Part Number Ordering Information Part Number AMMP-6233-BLKG AMMP-6233-TR1G AMMP-6233-TR2G Devices Per Container 10 100 500 Container Antistaticbag 7"Reel 7"Reel Note: No rf performance degradation is seen due to esd upto 50v hbm and 200v mm. the dc characteristics in general show increased leakage at lower esd discharge voltages. the user is reminded that this device is esd sensitive and needs to be handled with all necessary esd protocols. For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright (c) 2006 Avago Technologies Limited. All rights reserved. Obsoletes AV01-0666EN AV02-0489EN - June 12, 2007 |
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