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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2236 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min.) *Wide Area of Safe Operation *Complement to Type 2SB1477 APPLICATIONS *Designed for driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 100 V 100 V 5 V 5 A 60 W UNIT .cn mi e IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2236 TYP. MAX UNIT V(BR)CEO Collector-Emitter Beakdown Voltage IC= 10mA; IB= 0 100 V V(BR)CBO Collector-Base Beakdown Voltage IC= 50A; IE=0 100 V V(BR)EBO Emitter-Base Beakdown Voltage IE= 50A; IC=0 5 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.5 V Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 2.0 V A A Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current hFE DC Current Gain hFE Classifications D 60-120 E 100-200 ww w F 160-320 scs .i VEB= 5V; IC= 0 IC= 1A; VCE= 5V .cn mi e 60 10 10 320 isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SD2236
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