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| PHOTO DIODE SILICON PIN LED LAMPS Package Dimension LPD3333 SERIES Description The LPD3333 series aresilicon planar P/N photodiodes incorporated in plastic package that simultaneously serve as filter and are also Transparent for infrared emission their terminals are soldering tabs arranged in 2.54mm center to center spacing due to their design the diodes can vertically be assembled on pc boards arrays can be realized by multiple arrangement versatile photodetectors are suitable for diodes as well as voltaic cell operation the signal noise ratio is particularly favorable even at low illuminance the P/N photodiode are outstanding for low junction capacitance high cut-off frequency and fast switching times. They are particularly suitable for IR sound transmission and remote control the cathode of LPD3333 photodiode is marked by a stamping on the package edge 5.0 5.9 7.6 8.6 1.5MAX 1/4 0.5 TYP 25.0MIN 1.0MIN 2.54TYP NOTE:1.All dimension are In millimeters tolerance Is O 0.25 unless otherwise noted 2.Specifications are subject to change without notice MAXIMUM RATINGS (TA=25 ) E Characteristic Reverse Break Down Voltage Power Dissipation Operating Temperature Storage Temperature Symbol VBR PD Topr Tstg J Rating 30 150 nit V mW -30 -40 +60 +60 J J ELECTRICAL CHARACTERISTICS AT (TA= ) E Characteristic Dark Current Short Circuit Current Symbol ID Isc Test Condition VR=10V VR=5V f Ee=0mW/cT Min 1.5 Typ 1.0 2.0 Max 30 Unit nA uA P=940nm Ee=0.5mW/cT Open Circuit Voltage Total Capacitance Peak Wavelength of Max Sensitivity Rise Time,Fall Time DOC.NO: QW0905-LPD3333 Voc CT f P=940nm _ Ee=0.5mW/cT VR=3V f=1MHZ Ee=0mW/cT 350 20 940 50 mV pF nm ns f smax tr,tf VR=10V RL=1K REV: B [ Date:17 - Aug - 2005 |
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