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HVV1012-100 HVV1012-100 L-Band Avionics Pulsed Power Transistor HVV1012-100 The innovative Semiconductor Company!MHz, 10s Pulse, 1% Duty L-Band Avionics Pulsed Power Transistor 1025-1150 L-Band MHz, HVV1012-100 10s Pulse, 1% Transistor 1025-1150Avionics Pulsed Power Duty 1025-1150 MHz, 10s Power Transistor HVV1012-100 PRODUCT OVERVIEW L-Band Avionics PulsedPulse, 1% Duty 1025-1150 MHz, 10s Pulse, 1% Duty
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The innovative Semiconductor Company! The innovative Semiconductor Company! The innovative Semiconductor Company!
MHz to 1150 the frequency range FEATURES MHz. from 1025MHz to 1150MHz. FEATURES Power Gain * High * Excellent FEaTURES * FEATURESGainRuggedness High Power
ABSOLUTEParameter MAXIMUM RATINGS Symbol Value ABSOLUTE MAXIMUMVoltage 105 V Parameter Drain-Source RATINGS Unit aBSOLUTE MaXIMUM RaTINGS Symbol DSS Value
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ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS Symbol Parameter ELECTRICAL CHARACTERISTICS ELECTRICaL CHaRaCTERISTICS
THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMaL CHaRaCTERISTICS THERMALParameter CHARACTERISTICS Symbol Max THERMALThermal Resistance CHARACTERISTICS 1 0.14
Unit V VGSDrain-Source Gate-Source Voltage 10 V VDSS Symbol ParameterVoltage 105Value V Unit VDSS Drain-Source Voltage 105 V IDSX Drain Voltage 8 VGS Symbol Parameter Gate-Source Current 10 Value V UnitA VGS D Gate-Source Voltage 10 Drain-Source Voltage 95 1250 P Power IDSX VDSS Drain CurrentDissipation 105 A V W 8 IVGSS Drain CurrentVoltage 8 Gate-Source 10 DSX T Power Dissipation Storage Temperature -65W V C to A PD 1250 PD Power Current 1250 W IDSX Drain Dissipation 8 +200 A TS Storage Temperature -65 to C P2 Power Dissipation 1250 TSDTJ Storage Temperature -65200 W C to C Junction +200 TS Storage Temperature +200 -65 to C Temperature TJ Junction 200 C +200 TJ Junction 200 C Temperature TJ Junction 200 C Temperature Temperature
in
*48V ExcellentGain High Power Ruggedness ** Supply Voltage High Power Gain *** 48V Supply Voltage Excellent Ruggedness Excellent MAXIMUM ABSOLUTE Ruggedness RATINGS * * 48V Supply Voltage 48V Supply Voltage RATINGS ABSOLUTE MAXIMUM
* *
48V Supply Voltage * * High Ruggedness Excellent Power Gain
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RUGGEDNESS RUGGEDNESS RUGGEDNESS The HVV1012-100 RUGGEDNESS withstanding an
device is
The device resides in a two-lead metal flanged package with a two-lead metal flanged The device resides in liquid crystal polymer lid. The device package style metal lid. for The The NI-400 residescrystal polymer flanged package device resides in two-lead is qualified The gross package with liquid a in a two-lead metal flanged package test liquid a lid. Thepolymerpackage style is - in crystal HV400 flanged The leak withpolymer is qualified Method The device residesMIL-STD-750D, for lid. 1071.6, two-lead metal gross with liquid crystal style NI-400 package NI-400 Condition C. package package style is qualified 1071.6, liquid crystal Method leak test gross leak test - MIL-STD-883,lid. gross qualifiedTest-with MIL-STD-750D, MethodMethod 1014. for MIL-STD-750D, polymer for The leak test - NI-400 package style is qualified for 1071.6, gross Test Condition C. Test test - MIL-STD-750D, Method 1071.6, leak Condition C. RUGGEDNESS Test Condition C. output The HVV1012-100 device is capable capable mismatch withstanding an The HVV1012-100 device is ofload of The corresponding to a 20:1 VSWR HVV1012-100 device is capable of output load mismatch output load toat 20:1 VSWR at corresponding mismatch output a rated withstanding an The power and HVV1012-100 device voltagemismatch withstanding an output is capable of load corresponding to a operating at rated across the freoutput rated output poweran20:1 VSWR load rated across the withstanding to a 20:1 VSWR at mismatch output corresponding and operating voltage output frequency band operation. power band of operating voltageatof and operation. VSWR acrossoutput quency Symbol Parameter Test Condition the corresponding to a 20:1 voltage rated power and operating across Max the Units
LMT Load P Test 100W = F = 1150 20:1 VSWR Symbol Parameter OUT OUTCondition MHz 20:1 Units Max LMT1 LoadTolerance P = 100W VSWR Mismatch 1 LMT Load P 1150 MHz 20:1 VSWR Mismatch F =OUT = 100W F = 1150 MHz Tolerance Mismatch Tolerance F = 1150 MHz Tolerance
Unit Symbol JC Parameter Max Unit C/W Symbol Parameter Max Unit 1 1 Thermal Resistance JC Symbol Thermal Resistance 0.14 Parameter Max Unit 0.14 C/W C/W JC 1 Thermal Resistance 0.14 C/W JC
frequency and operating voltage across the band of operation. power 1 frequency band of operation. Load POUT = 100W Max 20:1 Symbol LMT Parameterband Units VSWR frequency ParameterTest Condition of Symbol Test Condition operation. Units Max Mismatch 1
Conditions Typ Units 3mA 102 Units V VBR(DSS) Drain-Source Breakdown Conditions VGS=0V,ID=1mA 110 Symbol Typ Symbol Parameter Parameter Conditions Typ Units I Drain Leakage Current VGS=0V,ID=1mA VGS=0V,VDS=48V Symbol Parameter Conditions Typ <10 V VBR(DSS) DSS 110 <80 V Units A VBR(DSS) Drain-Source Breakdown Drain-Source Breakdown VGS=0V,ID=1mA 110 IGSS Gate Leakage Current VGS=5V,VDS=0V Drain-Source Current VGS=0V,ID=1mA 110 V IDSS IVBR(DSS) Drain Leakage Current VGS=0V,VDS=48V <10 <1 AA A Drain LeakageBreakdown VGS=0V,VDS=48V <10 DSS 1 G Power Current POUT=100W,F=1025,1150MHz <1<1 20.5AA dB Leakage VGS=0V,VDS=48V <10 A IGSS IIDSSP GateDrainLeakage Current LeakageGain Current VGS=5V,VDS=0V Gate VGS=5V,VDS=0V GSS IGSS 1 Power Gain Return Loss Gate Gain VGS=5V,VDS=0V <1 A IRL Input POUT=100W,F=1025,1150MHz 20.5 11 dBdB dB GP1 GP11 POUT=100W,F=1025,1150MHz PowerLeakage Current POUT=100W,F=1025,1150MHz 20.5 1 1 GP 1 Power Gain P=100W,F=1025,1150MHz =100W,F=1025,1150MHz 20.5 50 dB dB Drain Efficiency OUTPOUT=100W,F=1025,1150MHz 11 IRL IRL D Input Return Loss POUT OUT=100W,F=1025,1150MHz Input Return Loss P 11 dB % 1 1 IRL 1 Input Return Loss P=100W,F=1025,1150MHz =100W,F=1025,1150MHz 11 <0.3 dB 1 PD Pulse Droop OUTPOUT=100W,F=1025,1150MHz 50 Drain Efficiency POUT OUT=100W,F=1025,1150MHz % % dB Drain Efficiency P 50 D D1 Drain Efficiency P=100W,F=1025,1150MHz 50 % 1 D1 OUT=100W,F=1025,1150MHz PD PD 1 Pulse Droop POUT OUT=100W,F=1025,1150MHz <0.3 dBdB Pulse Droop P <0.3 Pulse Droop dB 1.) 10 sec, Pulse Duty Cycle = VDD 1 PD Under Pulse Conditions: Pulse Width = POUT=100W,F=1025,1150MHz 1% at <0.3 = 48V, IDQ = 50mA
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HVVi Semiconductors, Inc. HVVi S. 51st St. Suite 10235Semiconductors, Inc. HVVi Semiconductors, Inc. HVViHVViSemiconductors, Inc. Semiconductors, Inc. 100 10235 S. Phoenix, Az. 100 10235 st 51ststSt. 85044100 1023510235S. St. SuiteSt. Suite 100 S. 51 S. 5151st Suite 100 St. Suite Phoenix, Phoenix,85044 85044 Phoenix, Az. Az.AZ. Phoenix, Az.85044 85044
1.) Under Pulse Conditions: Pulse Width = 10 sec, Pulse Duty Cycle = 1% at VDD = 48V, IDQ = 50mA 1.) Under Pulse Conditions: Pulse Width = 10 sec, Pulse Duty Cycle = 1% at VDD = 48V, IDQ = 50mA 2 Rated at TCASE = 25 1.) Under Pulse Conditions: Pulse Width = 10 sec, Pulse Duty Cycle = 1% at VDD = 48V, IDQ = 50mA
Under Pulse Conditions: Pulse Width = 10sec, Pulse Duty Cycle = 1% at VDD = 48V, IDQ = 50mA
For additional information, visit: www.hvvi.com For Semiconductors, www.hvvi.com HVViadditional information: For For additional information, visit: Inc. Confidential additional information, visit: www.hvvi.com For additional information, visit:www.hvvi.com Tel: (866) 429-HVVi (4884) or Confidential Rights Reserved. (c) 2008 HVVi Semiconductors, Inc. All HVVi Semiconductors, visit www.hvvi.com Semiconductors, HVVi Semiconductors, Inc.Inc. Confidential (c)(c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. 2008 HVViSemiconductors,Inc. Confidential HVVi Inc. All Rights Reserved. (c) 2008 HVVi Semiconductors, Inc. AllAll Rights Reserved. (c) 2008 HVVi Semiconductors, Inc. Rights Reserved.
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capable of
DESCRIPTION DESCRIPTION DESCRIPTION HVV1012-100 device is a high The high power voltage silicon enhancement mode RF transistor The high power HVV1012-100 device is a high DESCRIPTION DESCRIPTION
L-Band Avionics Pulsed Power Transistor PACKAGE 1025-1150MHz, 10s Pulse, 1% Duty PACKAGE for DME and TCAS Applications
PACKAGE PACKAGE PaCKaGE
designed for HVV1012-100 radar applications The high enhancement mode RF transistor voltage siliconpower L-Band pulseddevice is a high operating over pulsed radar applications the frequency range voltage silicon enhancement mode RF from 1025 designed high L-Band HVV1012-100 device transistor The for 1150 power The high power HVV1012-100 device is is a high MHz to for L-Band designedsilicon MHz. pulsed radar applications operating over the enhancement mode RF a high voltage frequency range fromtransistor 1025 voltage operatingMHz. L-Band pulsed radar applications MHzsilicon enhancementfrequency transistor designed for to 1150 over the mode RF range from 1025 designed for MHzFEATURES to pulsed the L-Band 1150 MHz. frequency range operating over operating overavionics applications from 1025
EG-01-PO04X2 EG-01-PO04X5 06/10/08 EG-01-PO04X2 EG-01-PO04X2 EG-01-PO04X2 10/13/08 06/10/08 1 06/10/08 06/10/081 11 1
The innovative Semiconductor Company! HVV1012-100 PRODUCT OVERVIEW
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L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10s Pulse, 1% Duty for DME and TCAS Applications
PaCKaGE DIMENSIONS
DraIN
GaTE SOUrCE
Note: Drawing is not actual size.
HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc.
HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044
For additional information: Tel: (866) 429-HVVi (4884) or visit www.hvvi.com (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-PO04X5 10/13/08 2

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