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  Datasheet File OCR Text:
 Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF2N60
APPLICATIONSL
TO-220F
High-Speed Switching. ABSOLUTE MAXIMUM RATINGS a=25ae(c) T
T stg Storage Temperature----------- 55~150ae Tj PD
Operating
Junction Temperature ------ 150ae ---
1D G 2D D 3D S
Allowable Power Dissipation c=25ae ------T (c) 23W Drain-Source Voltage ------------600V Gate-Source Voltage ------------ 30V
VDSS VGSS

ID Drain Current T c=25ae------- --2.0A (c) - -- -
ELECTRICAL CHARACTERISTICS a=25ae(c) T
Symbol Characteristics Min Typ Max Unit Test Conditions
BVDSS IDSS IGSS VGS(th) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Is VSD
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Source Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Rise Time
Turn - Off Delay Time
600 10 2.0 3.8 2.05 180 20 4.3 9 25 24 28 8.5 1.3 4.1 2.0 1. 4 5.5 235 25 3 28 60 58 66 12 A 100 4.0 5.0
V ID=250|I ,VGS=0V A |I VDS =600V GS=0 A V nA V VGS=A , VDS =0V 30V VDS = VGS , ID =250|I A *
| VGS=10V, ID =1.0A S VDS = 40V , ID =1.0A pF pF pF nS nS nS nS
nC nC nC
VDS =25V, VGS=0,f=1MHz
Fall Time
Total Gate Charge Gate- Source Charge Gate- Drain Charge
VDD =300V, ID =2A (*aO ) RG= 25 | * VDS =480V
VGS =10V ID =2A *
Continuous Source Current
A V ae /W IS =2.0A , VGS=0
Diode Forward Voltage Thermal Resistance Rth j-c(c) Junction-to-Case *Pulse Test Pulse WidthU 300|I Duty CycleU s 2%
Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF2N60
Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF2N60
Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF2N60
Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF2N60


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