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| SEMICONDUCTORS TIC206A, TIC206B, TIC206D, TIC206M, TIC206N, TIC206S SILICON BIDIRECTIONAL TRIODE THYRISTOR * * * * * * 4 A RMS Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 5 mA (Quadrants 1-3) Sensitive gate triacs Compliance to ROHS DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. ABSOLUTE MAXIMUM RATINGS Value A VDRM IT(RMS) ITSM ITSM IGM PGM PG(AV) TC Tstg TL Repetitive peak off-state voltage (see Note1) Full-cycle RMS on-state current at (or below) 70C case temperature (see note2) Peak on-state surge current full-sine-wave (see Note3) Peak on-state surge current half-sine-wave (see Note4) Peak gate current Peak gate power dissipation at (or below) 85C case temperature (pulse width 200 s) Average gate power dissipation at (or below) 85C case (see Note5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds 100 Symbol Ratings B 200 Unit S 700 D 400 4 25 30 0.2 1.3 0.3 M 600 N 800 V A A A A W W C C C -40 to +110 -40 to +125 230 Page 1 of 3 SEMICONDUCTORS TIC206A, TIC206B, TIC206D, TIC206M, TIC206N, TIC206S Notes: 1. 2. 3. 4. 5. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85C derate linearly to 110C case temperature at the rate of 160 mA/C. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. This value applies for a maximum averaging time of 20 ms. THERMAL CHARACTERISTICS Symbol RJC RJA Ratings Junction to case thermal resistance Junction to free air thermal resistance Value 7.8 62.5 Unit C/W ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Symbol IDRM Ratings Repetitive peak offstate current Gate trigger current Test Condition(s) VD = Rated VDRM, , IG = 0, TC = 110C Vsupply = +12 V, RL = 10 , tp(g) = > 20 s Vsupply = +12 V, RL = 10 , tp(g) = > 20 s Vsupply = -12 V, RL = 10 , tp(g) = > 20 s Vsupply = -12 V, RL = 10 , tp(g) = > 20 s Vsupply = +12 V, RL = 10 , tp(g) = > 20 s Vsupply = +12 V, RL = 10 , tp(g) = > 20 s Vsupply = -12 V, RL = 10 , tp(g) = > 20 s Vsupply = -12 V, RL = 10 , tp(g) = > 20 s Vsupply = +12 V, IG = 0, initiating ITM = 100 mA Vsupply = -12 V, IG = 0, initiating ITM = -100 mA Min Typ Mx Unit 1 0.5 -1.5 -2 3.6 0.7 -0.7 -0.8 0.8 2 -4 1 5 -5 -5 10 2 -2 -2 2 15 mA -15 mA V V/s 1.3 2.5 30 -30 1.3 2.2 50 mA IGT mA VGT Gate trigger voltage V IH Holding current IL VTM dv/dt dv/dt(c) Latching current Peak on-state voltage Critical rate of rise of off-state voltage Critical rise of communication voltage Vsupply = +12 V (seeNote7) Vsupply = -12 V (seeNote7) ITM = 4.2 A, IG = 50 mA (see Note6) VDRM = Rated VDRM, IG = 0 TC = 110C VDRM = Rated VDRM, ITRM = 4.2A TC = 85C All voltages are whit respect to Main Terminal 1. Page 2 of 3 SEMICONDUCTORS TIC206A, TIC206B, TIC206D, TIC206M, TIC206N, TIC206S Note 6: This parameters must be measured using pulse techniques, tW = 1s, duty cycle 2 %, voltage-sensing contacts, separate from the courrent-carrying contacts are located within 3.2mm (1/8 inch) from de device body. Note 7: The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics : RG = 100, tp(g) = 20 s, tr = 15ns, f = 1 kHz. MECHANICAL DATA CASE TO-220 Pin 1 : Pin 2 : Pin 3 : Main Terminal 1 Main Terminal 2 Gate Page 3 of 3 |
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