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| DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient Tc = 25C Tc = 25C, pulse width limited by TJM Tc = 25C Tc = 25C IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 IS = 0 VDSS ID25 RDS(on) Maximum Ratings 200 200 20 30 25 150 25 20 5 >200 590 V V V V A A A mJ V/ns GATE = = = = 200 V 25 A 0.13 590 W PDC DRAIN V/ns W W W C/W C/W SG1 SG2 SD1 SD2 PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions Tc = 25C Derate 1.9W/C above 25C Tc = 25C 284 3.0 0.25 0.53 Characteristic Values min. 200 2.5 3.0 5.5 100 50 1 .13 13 -55 175 -55 +175 300 2 16 18 +175 typ. max. Features * Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power * * - - * * * cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials TJ = 25C unless otherwise specified VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight VGS = 0 V, ID = 3 ma VDS = VGS, ID = 250 A VGS = 20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25C VGS = 0 TJ = 125C VGS = 15 V, ID = 0.5ID25 Pulse test, t 300S, duty cycle d 2% VDS = 15 V, ID = 0.5ID25, pulse test V V nA A mA S C C C C g Advantages * Optimized for RF and high speed switching at frequencies to 100MHz * Easy to mount--no insulators needed * High power density 1.6mm(0.063 in) from case for 10 s DE275-201N25A RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) min. RG Ciss Coss Crss Cstray Td(on) Ton Td(off) Toff Qg Qgs Qgd Source-Drain Diode Symbol IS ISM VSD Trr Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle 2% VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 (External) Back Metal to any Pin VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz typ. 0.3 2500 265 42 21 5 5 8 8 81 14 42 max. pF pF pF pF ns ns ns ns nC nC nC Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. 25 150 2.0 300 A A V ns CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice. For detailed device mounting and installation instructions, see the "Device Installation & Mounting Instructions" technical note on the IXYSRF web site at; http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 5,034,796 5,381,025 4,860,072 5,049,961 5,640,045 4,881,106 5,063,307 4,891,686 5,187,117 4,931,844 5,237,481 5,017,508 5,486,715 DE275-201N25A RF Power MOSFET Fig. 1 Typical Transfer Characteristics V DS = 60V, PW = 4uS 140 120 ID, Drain Current (A) 100 80 60 40 20 0 5 6 7 8 9 10 V GS , Gate-to Source Voltage (V) ID, Drain Currnet (A) 100 80 60 40 20 0 0 10 20 30 40 50 60 V DS , Drain-to-Source Voltage (V) Bottom Fig. 2 Typical Output Characteristics 120 Top 9-10V 8V 7.5V 7V 6.5V 6V 5.5V 5V Fig. 3 Gate Charge vs. Gate-to-Source Voltage V DS = 100V, ID = 12.5A 16 Fig. 4 VD S vs.Capacitance 10000 Gate-to-Source Voltage (V) 14 Ciss Coss Crss 10 8 6 4 2 0 0 50 100 150 Gate Charge (nC) Capacitance (pF) 12 1000 100 10 1 0 20 40 60 80 100 120 140 160 VDS Voltage (V) DE275-201N25A RF Power MOSFET Fig. 5 Package Drawing Source Source Gate Drain Source Source DE275-201N25A RF Power MOSFET 201N25A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. 10 DRAIN Ld 4 Rd Lg 20 GATE Doff Roff D1crs D2crs 5 Ron Don 6 8 1 M3 3 Dcos Rds 2 7 Ls 30 SOURCE Figure 6 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the DEI web site at http://www.ixysrf.com/products/switch_mode.html http://www.ixysrf.com/spice/DE275-201N25A.html Net List: ********** *SYM=POWMOSN .SUBCKT 201N25A 10 20 30 * TERMINALS: D G S * 200 Volt 25 Amp .13 ohm N-Channel Power MOSFET M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 1.5 DON 6 2 D1 ROF 5 7 .2 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 2.5N RD 4 1 .13 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .1N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=25.0) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=1100P BV=200 M=.5 VJ=.6 TT=1N RS=10M) .MODEL D3 D (IS=.5F CJO=300P BV=200 M=.3 VJ=.4 TT=400N RS=10M) .ENDS Doc #9200-0260 Rev 4 (c) 2009 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: sales@ixyscolorado.com Web: http://www.ixyscolorado.com |
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