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TYPICAL PERFORMANCE CURVES
APT20GN60BDQ1 APT20GN60BD_SDQ1(G) APT20GN60SDQ1 APT20GN60BDQ1(G) APT20GN60SDQ1(G) 600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.
G
(B)
TO -2 47
D3PAK
(S)
C G E
* 600V Field Stop
* * * * Trench Gate: Low VCE(on) Easy Paralleling 6s Short Circuit Capability 175C Rated
C
E
C G E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT20GN60BD_SDQ1(G) UNIT Volts
600 30 40 24 60 60A @ 600V 136 -55 to 175
Amps
@ TC = 175C
Switching Safe Operating Area @ TJ = 175C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) Gate Threshold Voltage (VCE = VGE, I C = 290A, Tj = 25C) MIN TYP MAX Units
600 5.0 1.1 5.8 1.5 1.7 50
2
6.5 1.9
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 20A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 20A, Tj = 125C)
I CES I GES RG(int)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
A nA
7-2009 050-7615 Rev B
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor
TBD 300 N/A
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT20GN60BD_SDQ1(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 20A TJ = 175C, R G = 4.3
7,
MIN
TYP
MAX
UNIT
1110 50 35 9.5 120 10 70
VGE = nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
4 5
15V, L = 100H,VCE = 600V VCC = 360V, VGE = 15V, TJ = 150C, R G = 4.3 7 Inductive Switching (25C) VCC = 400V VGE = 15V I C = 20A RG = 4.3 7 TJ = +25C
60 6 9 10 140 95 230 260 580 9 10 160 130 250 450 750
A
s
ns
Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
44 6
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 20A RG = 4.3 7
55
ns
Turn-on Switching Energy (Diode) Turn-off Switching Energy
66
TJ = +125C
J
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
1.1 1.35 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
7-2009 Rev B 050-7615
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
40
V
GE
APT20GN60BD_SDQ1(G)
90 15V 80 14V 13V
= 15V
35 IC, COLLECTOR CURRENT (A) TJ = 25C 30 25 TJ = 125C 20 15 TJ = 175C 10 5 0 TJ = -55C IC, COLLECTOR CURRENT (A)
70 60
12V 50 40 30 20 10 0 11V 10V 9V 8V 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
FIGURE 1, Output Characteristics(TJ = 25C) 60 50 40 30 20 10 0 VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 125C) 16 14 12 VCE = 300V 10 8 6 4 2 0 0 20 40 60 80 100 GATE CHARGE (nC) FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 3.0 2.5 IC = 40A 2.0 IC = 20A 1.5 IC = 10A 120 140 VCE = 480V
I = 20A C T = 25C
J
IC, COLLECTOR CURRENT (A)
TJ = -55C TJ = 25C TJ = 125C TJ = 175C
VCE = 120V
0
5 10 15 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.0 IC = 40A
2.5 2.0
IC = 20A 1.5 1.0 IC = 10A
1.0 0.5 0
0.5 0
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.40
6
25 50 75 100 125 150 175 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 60
0
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
1.30 1.20
50
40
1.10 1.00
30
0.90
10 0 -50 -25 Rev B 050-7615
0.80 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
7-2009
20
APT20GN60BD_SDQ1(G)
12 td(ON), TURN-ON DELAY TIME (ns) 10 8 6 4 2 T = 25C, T =125C J J 0
RG = 4.3 L = 100 H VCE = 400V
250 VGE = 15V td (OFF), TURN-OFF DELAY TIME (ns)
200
150
VGE =15V,TJ=125C
100
VGE =15V,TJ=25C
50
VCE = 400V RG = 4.3 L = 100 H
5 10 15 20 25 30 35 40 45 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 25
RG = 4.3, L = 100H, VCE = 400V
5 10 15 20 25 30 35 40 45 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 140 120
0
20 tr, RISE TIME (ns) tf, FALL TIME (ns) 100 80 60 40 20 10 15 20 25 30 35 40 45 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 1400 EON2, TURN ON ENERGY LOSS (J) 1200 1000
TJ = 125C
V = 400V CE V = +15V GE R = 4.3
G
TJ = 125C, VGE = 15V
15
TJ = 25C, VGE = 15V
10
TJ = 25 or 125C,VGE = 15V
5
RG = 4.3, L = 100H, VCE = 400V
0
5
10 15 20 25 30 35 40 45 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 1400 EOFF, TURN OFF ENERGY LOSS (J) 1200 1000 800 600 400 200 0
TJ = 25C
V = 400V CE V = +15V GE R = 4.3
G
0
5
TJ = 125C
800 600 400 200
TJ = 25C
5 10 15 20 25 30 35 40 45 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 3500 SWITCHING ENERGY LOSSES (J) 3000 2500 2000 1500 1000 500 0 Eon2,20A Eoff,20A Eoff,10A Eon2,10A 0
V = 400V CE V = +15V GE T = 125C
J
0
5 10 15 20 25 30 35 40 45 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 1400 SWITCHING ENERGY LOSSES (J) 1200 1000 800 600 400 200 0 Eoff,20A Eoff,10A Eon2,20A Eon2,10A 0
V = 400V CE V = +15V GE R = 4.3
G
Eon2,40A Eoff,40A
Eon2,40A
Eoff,40A
Rev B
7-2009
050-7615
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
2,000 Cies 1,000 500 IC, COLLECTOR CURRENT (A)
70 60 50 40 30 20 10 0
APT20GN60BD_SDQ1(G)
C, CAPACITANCE ( F)
P
100 50 Coes Cres 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 10
100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
1.20 D = 0.9
ZJC, THERMAL IMPEDANCE (C/W)
1.00
0.80
0.7
0.60
0.5
Note:
0.40
PDM
0.3
SINGLE PULSE
t1 t2
0.20
0.1 0.05
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
0
10-5
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-4
1.0
140 FMAX, OPERATING FREQUENCY (kHz) 100
50
F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf
T = 125C J T = 75C C D = 50 % V = 400V CE R = 4.3
G
f max2 = Pdiss =
Pdiss - P cond E on2 + E off TJ - T C R JC
10 7
10 15 20 25 30 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
5
050-7615
Rev B
7-2009
APT20GN60BD_SDQ1(G)
APT15DQ60
10%
Gate Voltage TJ = 125C
td(on)
V CC
IC
V CE
tr Collector Current 90% 5% 5% 10% Collector Voltage
Switching Energy
A D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage td(off) Collector Voltage 90% tf 10%
TJ = 125C
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
050-7615
Rev B
7-2009
TYPICAL PERFORMANCE CURVES
APT20GN60BD_SDQ1(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Characteristic / Test Conditions Maximum Average Forward Current (TC = 129C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms)
All Ratings: TC = 25C unless otherwise specified.
APT20GN60BD_SDQ1(G) UNIT
15 30 110
Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions IF = 20A VF Forward Voltage IF = 40A IF = 20A, TJ = 125C MIN TYP MAX UNIT
2.18 2.76 1.75
MIN TYP MAX UNIT ns Volts
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
1.40 ZJC, THERMAL IMPEDANCE (C/W) 1.20 1.00 0.80 0.5 0.60 0.40 0.20 0 10-5 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 10-4 0.3
Note:
15 19 21 2 105 250 5 55 420 15 -
IF = 15A, diF/dt = -200A/s VR = 400V, TC = 25C
-
nC Amps ns nC Amps ns nC Amps
IF = 15A, diF/dt = -200A/s VR = 400V, TC = 125C
-
IF = 15A, diF/dt = -1000A/s VR = 400V, TC = 125C
-
D = 0.9
0.7
PDM
t1 t2
0.1 0.05 SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
050-7615
Rev B
7-2009
60 trr, REVERSE RECOVERY TIME (ns)
APT20GN60BD_SDQ1(G)
140
T =125C J V =400V
50 IF, FORWARD CURRENT (A) TJ = 175C 40 TJ = 125C
120 30A 100 80 60 40 20 0 15A
R
30
7.5A
20
10 0
TJ = 25C TJ = -55C 0
1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage
T =125C J V =400V
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change 25 IRRM, REVERSE RECOVERY CURRENT (A)
T =125C J V =400V
R
700 Qrr, REVERSE RECOVERY CHARGE (nC) 600 500 400 300 200 100 0 7.5A
R
30A
20 30A 15
15A
10 7.5A
15A
5
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) Qrr trr
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 35 30 25
Duty cycle = 0.5 T =175C
J
0
1.0
0.8 IRRM 0.6 trr 0.4 10 0.2 0.0 Qrr 5 0 IF(AV) (A) 20 15
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature 90 CJ, JUNCTION CAPACITANCE (pF) 80 70 60 50 40 30 20 10 10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage 0 1
0
75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature
25
50
050-7615
Rev B
7-2009
TYPICAL PERFORMANCE CURVES
Vr +18V 0V D.U.T. 30H diF /dt Adjust
APT6017LLL
APT20GN60BD_SDQ1(G)
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
Collector (Cathode) (Heat Sink)
D PAK Package Outline
e3 SAC: Tin, Silver, Copper
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 1.04 (.041) 1.15(.045) 13.41 (.528) 13.51(.532)
3
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
Gate Collector (Cathode) Emitter (Anode)
Heat Sink (Collector) and Leads are Plated
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7615
Rev B
7-2009
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Emitter (Anode) Collector (Cathode) Gate Dimensions in Millimeters (Inches)

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