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 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769
TSMBJ0305C-064
* * * * *
Features
Oxide-Glass passivated Junction Bi-Directional protection in a single device Surge capabilities up to 50A@10/1000us or 150A@8/20us High Off-State impedance and Low On-State voltage Plastic material has UL flammability classification 94V -0
Transient Voltage Protection Device 58 Volts
DO-214AA (SMBJ)
H
Mechanical Data
* * * Case : Molded plastic Polarity : None cathode band denotes Approx Weight : 0.093grams
J
Maximum Ratings
Characteristic Non-repetitive peak impulse current Non-repetitive peak On-state current Operating temperature range Junction and storage temperature range Symbol IPP ITSM TOP TJ, TSTG Value 50A 20A -40~125oC -55~150oC
DIM A B C D E F G H J
Unit 10/1000us 8.3ms, one-half cycle
E F G
DIMENSIONS INCHES MIN .078 .077 .002 --.030 .065 .205 .160 .130 MM MIN 2.00 1.96 .05 --.76 1.65 5.21 4.06 3.30
A
C
D
B
Thermal Resistance
Characteristic Thermal Resistance junction to lead Thermal Resistance junction to ambient Typical positive temperature coefficient for breakdown voltage Symbol
RqJL RqJA
MAX .096 .083 .008 .02 .060 .091 .220 .180 .155
MAX 2.44 2.10 .20 .51 1.52 2.32 5.59 4.57 3.94
NOTE
Value 30 C/W 120 C/W 0.1%/oC
o o
Unit On recommended pad layout
SUGGESTED SOLDER PAD LAYOUT
0.090"
0.085"
VBR/TJ
0.070"
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TSMBJ0305C-064
ELECTRICAL CHARACTERISTIC @25 Unless otherwise specified
Parameter On-State Rated Off-state Breakover Voltage Breakover Current Repetitive Off Leakage Voltage @IT =1.0A -state Voltage Current@VDRM Holding Current
Off-State Capacitance CJ pF Typ.
100
Symbol Units Limit
TSMBJ0305C-064
VDRM Volts Max
58
IDRM uA Max
5
VBO Volts Max
77
VT Volts Max
5
IBOmA Min
50
IBO+ mA Max
800
IHmA Min
150
IH+ mA Max
800
MAXIMUM RATED SURGE WAVEFORM Waveform Standard Ipp (A)
2/10 us 8/20 us 10/160 us 10/700 us 10/560 us 10/1000 us GR-1089-CORE IEC 61000-4-5 FCC Part 68 ITU-T K20/21 FCC Part 68 GR-1089-CORE 200 150 100 60 60 50
Ipp ; PEAK PULSE CURRENT (%) 100
Peak value (Ipp)
tr = rise time to peak value tp = decay time to half value
50
Half value
0
tr
tp
TIME
Symbol VDRM IDRM VBR IBR VBO IBO IH VT IPP CO
NOTE
Parameter
Stand-off voltage Leakage current at stand-off voltage Breakdown voltage Breakdown current Breakover voltage Breakover current Holding current On state voltage Peak pulse current Off-state capacitance
NOTE: 2 NOTE: 1
IBR IBO IH IDRM IPP
I
VT
VBR VDRM VBO
V
1. I H > ( V L/ R L) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge recovery time. It does not exceed 30ms. 2. Off-state capacitance measured at f=1.0MHz , 1.0Vrms signal , VR=2Vdc bias.
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TSMBJ0305C-064
Fig.1 - Off-State Current v.s Junction Temperature
100 1.2
Fig.2 - Relative Variation of Breakdown Voltage v.s Junction Temperature
I(DRM) , OFF-STATE CURRENT(uA)
10
NORMALISED BREAKDOWN VOLTAGE
VBR(TJ)
1.15
VBR(TJ=25)
1
1.1
VDRM = 50V
0.1
1.05
1
0.01
0.95
0.001 -25 0 25 50 75 100 125 150
0.9 -50 -25 0 25 50 75 100 125 150 175
Tj , JUNCTION TEMPERATURE ()
Tj ; JUNCTION TEMPERATURE ()
Fig.3 - Relative Variation of Breakover Voltage v.s Junction Temperature
100 1.1
Fig.4 - On-State Current v.s On-State Voltage
NORMALISED BREAKOVER VOLTAGE
VBO(TJ)
1.05
VBO(TJ=25)
I(T) ; ON-STATE CURRENT (A)
10
1
TJ = 25
0.95 -50 -25 0 25 50 75 100 125 150 175
1 1 2 3 4 5 6 7 8 9
Tj ; JUNCTION TEMPERATURE ()
V(T) ; ON-STATE VOLTAGE
Fig.5 - Relative Variation of Holding Current v.s Junction Temperature
2 1
Fig.6 - Relative Variation of Junction Capacitance v.s Reverse Voltage Bias
NORMALISED HOLDING CURRENT
1.5
1
NORMALISED CAPACITANCE
CO(VR) CO(VR = 1V) Tj =25 f=1MHz VRMS = 1V
0.5
IH(TJ) IH(TJ =25)
0 -50 -25 0 25 50 75 100 125
0.1 1 10 100
Tj ; JUNCTION TEMPERATURE ()
VR ; REVERSE VOLTAGE (V)
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TSMBJ0305C-064
TYPICAL APPLICATION CIRCUITS
FUSE
RING TELECOM EQUIPMENT E.G. MODEM TIP
TSPD 1
RING
PTC
TSPD 1
TELECOM EQUIPMENT E.G. ISDN
TSPD 2
TIP
PTC
RING
PTC
TSPD 2 TSPD 1 TSPD 3
TELECOM EQUIPMENT E.G. LINE CARD
TIP
PTC
The PTC (Positive Temperature Coefficient) is an overcurrent protection device.
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