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| DEC 2009 SPHN0365A/SPHP0365A-Preliminary SPHP0365A/SPHN0365A VER : Preliminary ( SEMIHOW POWER SWITCH ) FEATURES Variable frequency operation Low Start-up Current(Typ.100uA ) Pulse by Pulse Current Limiting Over Current Protection Over Voltage Protection (Min. 20) Internal Thermal Shutdown Function Under Voltage Lockout Internal High Voltage Sense FET Auto-Restart Mode Advanced Burst-Mode Operation APPLICATION SMPS for STB, SVR, DVD & DVCD SMPS for Printer, Facsimile & Scanner Adaptor SPHN0365A SPHP0365A DESCRIPTION The SemiHow Power Switch product family is specially designed for an off-line SMPS with minimal external components. The SemiHow Power Switch consists of a high voltage power SenseFET and a current mode PWM IC. It has a basic platform well suited for the cost effective design in either a flyback converter INTERNAL BLOCK DIAGRAM SEMIHOW REV.PLIMILARY"DEC 2009 Absolute Maximum Ratings SPHP0365A Symbol VDSS ID VGD IDM VGS EAS VCC(MAX) VFB PD TJ TA TSTG Drain-Source Voltage Drain Current Drain Current Gate - source Voltage Drain Current Gate-Source Voltage - Pulsed TC=25 unless otherwise specified SPHN0365A/SPHP0365A-Preliminary Parameter Value 650 Units V A A V A V mJ V V W W/ - Continuous (TC = 25) - Continuous (TC = 100) 3.0 2.4 30 (Note 1) 12 30 Single Pulsed Avalanche Energy Maximum Supply voltage Analog Input Voltage Range Power Dissipation (TC = 25) - Derate above 25 Operating Junction Temperature Operating Ambient Temperature Storage Temperature Range (Note 2) 358 20 -0.3 To VSD 75 0.6 +160 -25 to +85 -55 to +150 SPHN0365A Symbol VDSS ID VGD IDM VGS EAS VCC(MAX) VFB PD TJ TA TSTG Drain-Source Voltage Drain Current Drain Current Gate - source Voltage Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Maximum Supply voltage Analog Input Voltage Range Power Dissipation (TC = 25) - Derate above 25 Operating Junction Temperature Operating Ambient Temperature Storage Temperature Range (Note 2) Parameter Value 650 Units V A A V A V mJ V V W W/ - Continuous (TC = 25) - Continuous (TC = 100) - Pulsed 0.42 0.28 30 (Note 1) 3 30 127 20 -0.3 To VSD 1.56 0.0125 +160 -25 to +85 -55 to +150 SEMIHOW REV.PLIMILARY"DEC 2009 SPHN0365A/SPHP0365A-Preliminary Electrical Characteristics ( SenseFet Part ) TC=25 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.5 A -3.6 4.5 Off Characteristics BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 50 VDS = 650 V, VGS = 0 V VDS = 520 V, TC = 125 650 ------50 200 V Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---950 550 120 1230 710 155 Switching Characteristics td(on) Tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 325 V, ID = 1 A, RG = 25 -------- 18 12 80 22 13 2.0 5.5 ----17 --- nC nC nC VDS = 325V, ID = 1 A, VGS = 10 V (Note 4,5) Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=14.2mH, IAS=9.5A, VDD=50V, RG=25, Starting TJ =25C 3. ISD9.5A, di/dt200A/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature SEMIHOW REV.PLIMILARY"DEC 2009 SPHN0365A/SPHP0365A-Preliminary Electrical Characteristics ( Control Part ) TC=25 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units UVLO Section VSTART VSTOP Start Threshold Voltage Stop Threshold Voltage VFB = GND VFB = GND 14 8.4 15 9 16 9.6 V V Oscillator Section FOSC -DMAX Initial Accuracy Frequency Change With Temperature (Note 2) Maximum Duty Cycle -25C Ta +85C 57 -73 64 5 77 71 10 82 KHz % % FEEDBACK Section IFB VSD Idelay Feedback Source Current Shutdown Feedback Voltage Shutdown Delay Current Ta=25C, 0V Reference Section VREF IOVER Reference Output Voltage (Note 1) Ta=25C -25C Ta +85C Max. inductor current Peak Current Limit 4.8 -1.62 5 0.3 2.0 5.2 0.6 2.38 V mV/C A Vref/T Temperature Stability (Note 1 , 2) Protection Section VOVP TSD Over Voltage Protection Thermal Shutdown Temperature (Tj) (Note 1) VCC > 20V -20 140 -160 23 -V C Protection Section ISTART IOP Start-up Current Operating Supply Current (Control Part Only) VCC = 14V VCC < 20V --100 3 170 6 mA Notes ; 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS(water test) process SEMIHOW REV.PLIMILARY"DEC 2009 Typical Characteristics (SPGP0365A) SPHN0365A/SPHP0365A-Preliminary 101 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 100 * Notes : 1. 250us Pulse Test 2. TC = 25oC ID, Drain Current [A] 100 101 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 7 6 5 4 3 2 1 Note : TJ = 25oC RDS(ON) [], Drain-Source On-Resistance VGS = 10V VGS = 20V IDR, Reverse Drain Current [A] 300 0 0 1 2 3 4 5 6 ID, Drain Current [A] VSD, Source-Drain Voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 1000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 VDS = 130V VGS, Gate-Source Voltage [V] 800 10 VDS = 325V VDS = 520V Capacitances [pF] 600 Ciss 8 6 400 Coss Crss * Note ; 1. VGS = 0 V 2. f = 1 MHz 4 200 2 * Note : ID = 3.0A 0 10-1 0 100 101 0 3 6 9 12 15 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics SEMIHOW REV.PLIMILARY"DEC 2009 Typical Characteristics (SPGP0365A) (continued) SPHN0365A/SPHP0365A-Preliminary 1.2 2.5 BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 2.0 1.1 1.5 1.0 1.0 0.9 Note : 1. VGS = 0 V 2. ID = 250A 0.5 Note : 1. VGS = 10 V 2. ID = 1.5 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [oC] Figure 7. Breakdown Voltage Variation vs Temperature 3.0 Operation in This Area is Limited by R DS(on) Figure 8. On-Resistance Variation vs Temperature 101 2.5 1 ms 10 ms 100 ms ID, Drain Current [A] ID, Drain Current [A] 103 2.0 10 0 DC 1.5 1.0 10-1 * Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse 0.5 10-2 100 101 102 0.0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [oC] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 100 D=0.5 ZJC(t), Thermal Response 0.2 10-1 0.1 0.05 0.02 0.01 * Notes : 1. ZJC(t) = 1.25 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t) PDM single pulse 10-2 t1 10-3 10-2 10-1 t2 100 101 10-5 10-4 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve SEMIHOW REV.PLIMILARY"DEC 2009 Typical Characteristics (SPGN0365A) SPHN0365A/SPHP0365A-Preliminary 101 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 100 * Notes : 1. 250us Pulse Test 2. TC = 25oC 100 101 ID, Drain Current [A] VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics IDR , Reverse Drain Current [A] 101 RDS(ON)[], Drain-Source On-Resistance 100 150oC 25oC * Note : 1. VGS = 0V 2. 250s Pulse Test 10-1 0.2 ID, Drain Current [A] 0.4 0.6 0.8 1.0 1.2 1.4 VSD , Source-Drain Voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 1000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 VDS = 130V VGS, Gate-Source Voltage [V] 800 10 VDS = 325V VDS = 520V Capacitances [pF] 600 Ciss 8 6 400 Coss Crss * Note ; 1. VGS = 0 V 2. f = 1 MHz 4 200 2 * Note : ID = 3.0A 0 10-1 10 0 10 1 0 0 3 6 9 12 15 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics SEMIHOW REV.PLIMILARY"DEC 2009 Typical Characteristics (SPGN0365A) (continued) SPHN0365A/SPHP0365A-Preliminary 1.2 2.5 BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 2.0 1.1 1.5 1.0 1.0 0.9 Note : 1. VGS = 0 V 2. ID = 250A 0.5 Note : 1. VGS = 10 V 2. ID = 1.5 A 0.8 -100 -50 0 50 100 150 200 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 7. Breakdown Voltage Variation vs Temperature 0.5 Figure 8. On-Resistance Variation vs Temperature 0.4 ID, Drain Current [A] ID, Drain Current [A] 0.3 0.2 0.1 0.0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [oC] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 102 D=0.5 ZJC(t), Thermal Response 0.2 101 0.1 0.05 0.02 0.01 single pulse * Notes : 1. ZJC(t) = 80 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t) 100 PDM t1 10-3 10-2 10-1 10-1 10-5 t2 100 101 10-4 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve SEMIHOW REV.PLIMILARY"DEC 2009 Package Dimension SPHN0365A/SPHP0365A-Preliminary SEMIHOW REV.PLIMILARY"DEC 2009 SPHN0365A/SPHP0365A-Preliminary SEMIHOW REV.PLIMILARY"DEC 2009 |
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