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| Si3430DV Vishay Siliconix N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 FEATURES ID (A) 2.4 2.3 rDS(on) (W) 0.170 @ VGS = 10 V 0.185 @ VGS = 6.0 V D High-Efficiency PWM Optimized D 100% Rg Tested TSOP-6 Top View 1 3 mm 6 5 (3) G 3 4 (1, 2, 5, 6) D 2 2.85 mm (4) S Ordering Information: Si3430DV-T1 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy (Duty Cycle v1%) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C L = 0 1 mH 0.1 TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IAR EAR IS PD TJ, Tstg 5 secs 100 "20 2.4 1.7 8 6 1.8 1.7 2.0 1.0 Steady State Unit V 1.8 1.3 A mJ 1.0 1.14 0.59 A W _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71235 S-31725--Rev. B, 18-Aug-03 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 45 90 25 Maximum 62.5 110 30 Unit _C/W C/W 1 Si3430DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 2.4 A VGS = 6.0 V, ID = 2.3 A VDS = 15 V, ID = 2.4 A IS = 1.7 A, VGS = 0 V 8 0.148 0.160 7 0.8 1.2 0.170 0.185 2 "100 1 25 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Resistance Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf Rg trr VGS = 0.1 V, f = 5 MHz IF = 1.7 A, di/dt = 100 A/ms VDD = 50 V, RL = 50 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 1 9 11 16 9 2.8 50 80 VDS = 50 V, VGS = 10 V, ID = 2.4 A 5.5 1.5 1.4 4 20 20 30 20 W ns ns W 6.6 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 8 VGS = 10 thru 6 V 5V 6 I D - Drain Current (A) I D - Drain Current (A) 6 8 Transfer Characteristics 4 4 2 4V 0 0.0 2 TC = 125_C 25_C - 55_C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71235 S-31725--Rev. B, 18-Aug-03 www.vishay.com 2 Si3430DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.25 r DS(on) - On-Resistance ( W ) 500 Capacitance VGS = 6.0 V 0.15 VGS = 10 V C - Capacitance (pF) 0.20 400 Ciss 300 0.10 200 0.05 100 Crss Coss 0.00 0 2 4 ID - Drain Current (A) 6 8 0 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 50 V ID = 2.4 A 8 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 0 1 2 3 4 5 6 Qg - Total Gate Charge (nC) 0.6 - 50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 2.4 A 6 4 2 r DS(on) - On-Resistance (W) (Normalized) - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.4 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) I S - Source Current (A) 0.3 ID = 2.4 A TJ = 150_C 0.2 0.1 TJ = 25_C 1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71235 S-31725--Rev. B, 18-Aug-03 www.vishay.com 3 Si3430DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 0.2 V GS(th) Variance (V) - 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 1.0 - 50 5 0 0.01 ID = 250 mA 20 Power (W) 30 25 Single Pulse Power 15 10 - 25 0 25 50 75 100 125 150 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71235 S-31725--Rev. B, 18-Aug-03 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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