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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD17K80 DESCRIPTION *High DC current gain *Collector-Emitter Sustaining VoltageVCEO(SUS)= -80V(Min) *Complement to type PMD16K80 APPLICATIONS *Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE -80 UNIT V Collector Current -Continuous Collector Current-Peak Base Current w ww scs .i -80 -5.0 -20 -40 -0.5 200 150 -65~200 .cn mi e V V A A A PC Tj Tstg Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER ThermalResistance, Junction to Case MAX 0.875 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS PMD17K80 MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100Ma; IB= 0 B -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -40mA -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -10A; IB= -40mA -2.8 V VBE(on) Base-Emitter On Voltage IC= -10A; VCE= -3V VCE= -80V; RBE= 1K VCE= -80V; RBE= 1K, TC=150 VEB= -5V; IC= 0 -2.8 -1.0 -5.0 -2.0 V ICER Collector Cutoff current mA IEBO Emitter Cut-off current hFE DC Current Gain fT Current-Gain--Bandwidth Product COB Output Capacitance w w scs .i w IC= -10A; VCE= -3V IC= -7A; VCE= -3V, f= 1kHz .cn mi e mA 800 20000 4 MHz IE= 0; VCB= -10V; ftest= 1.0MHz 400 pF isc Websitewww.iscsemi.cn 2 |
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