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FCP16N60N / FCPF16N60NT N-Channel MOSFET SupreMOSTM FCP16N60N / FCPF16N60NT N-Channel MOSFET 600V, 16A, 0.170 Features * RDS(on) = 0.17 ( Typ.)@ VGS = 10V, ID = 8A * Ultra low gate charge ( Typ. Qg = 40.2nC) * Low effective output capacitance * 100% avalanche tested * RoHS compliant August 2009 Description The SupreMOS MOSFET, Fairchild's next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry's AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G GDS TO-220 FCP Series GD S TO-220F FCPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Ruggedness Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC (Note 3) 134.4 1.08 -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) 16.0 10.1 48.0 355 5.3 1.34 100 20 35.7 0.29 -55 to +150 300 FCP16N60N FCPF16N60NT 600 30 16.0* 10.1* 48.0* Units V V A A mJ A mJ V/ns V/ns W W/oC oC o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Heat Sink (Typical) Thermal Resistance, Junction to Ambient FCP16N60N FCPF16N60NT 0.93 0.5 62.5 3.5 0.5 62.5 oC/W Units (c)2009 Fairchild Semiconductor Corporation FCP16N60N / FCPF16N60NT Rev. A1 1 www.fairchildsemi.com FCP16N60N / FCPF16N60NT N-Channel MOSFET Package Marking and Ordering Information Device Marking FCP16N60N FCPF16N60NT Device FCP16N60N FCPF16N60NT Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 1mA, VGS = 0V, TC = 25oC ID = 1mA, Referenced to VDS = 480V, VGS = 0V VDS = 480V, VGS = 0V, TC = 125oC VGS = 30V, VDS = 0V 25oC 600 0.73 10 100 100 V V/oC A nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 8A VDS = 40V, ID = 8A 2.0 0.170 13 4.0 0.199 V S Dynamic Characteristics Ciss Coss Crss Coss Cosseff. Qg(tot) Qgs Qgd ESR Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge Equivalent Series Resistance (G-S) VDS = 380V, ID = 8A, VGS = 10V (Note 4) VDS = 100V, VGS = 0V f = 1MHz VDS = 380V, VGS = 0V, f = 1MHz VDS = 0V to 480V, VGS = 0V - 1630 70 5 40 176 40.2 6.7 12.9 2.9 2170 95 10 60 52.3 - pF pF pF pF pF nC nC nC Drain Open Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 380V, ID = 8A RG = 4.7 (Note 4) - 15.8 15.5 60.3 20.2 41.6 41.0 130.6 50.4 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 8A VGS = 0V, ISD = 8A dIF/dt = 100A/s 319 4.4 16 48 1.2 A A V ns C Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 5.3A, RG = 25, Starting TJ = 25C 3. ISD 16A, di/dt 200A/s, VDD = 380V, Starting TJ = 25C 4. Essentially Independent of Operating Temperature Typical Characteristics FCP16N60N / FCPF16N60NT Rev. A1 2 www.fairchildsemi.com FCP16N60N / FCPF16N60NT N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 100 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.0 V 4.5 V 4.0 V Figure 2. Transfer Characteristics 100 ID, Drain Current[A] ID, Drain Current[A] 10 10 150 C o 25 C -55 C o o 1 *Notes: 1. 250s Pulse Test 2. TC = 25 C o 1 *Notes: 1. VDS = 20V 2. 250s Pulse Test 0.1 0.1 0.1 1 VDS, Drain-Source Voltage[V] 10 20 2 4 6 VGS, Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100 RDS(ON) [], Drain-Source On-Resistance IS, Reverse Drain Current [A] 0.5 0.4 VGS = 10V 150 C o 10 25 C o 0.3 VGS = 20V 0.2 *Notes: TC = 25 C o *Notes: 1. VGS = 0V 0.1 0 10 20 30 ID, Drain Current [A] 40 50 1 0.2 2. 250s Pulse Test 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Body Diode Forward Voltage [V] 1.6 Figure 5. Capacitance Characteristics 10000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] VDS = 120V VDS = 380V VDS = 480V 8 7500 Capacitances [pF] Coss *Notes: 1. VGS = 0V 2. f = 1MHz 6 5000 4 2500 Ciss 2 *Notes: ID = 8A Crss 0 0.1 0 1 10 100 VDS, Drain-Source Voltage [V] 600 0 10 20 30 40 Qg, Total Gate Charge [nC] 50 FCP16N60N / FCPF16N60NT Rev. A1 3 www.fairchildsemi.com FCP16N60N / FCPF16N60NT N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance 2.5 2.0 1.5 1.0 0.5 0.0 -100 *Notes: 1. VGS = 10V 2. ID = 8A 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 9. Maximum Safe Operating Area _ FCP16N60N 100 20s 100s Figure 10. Maximum Safe Operating Area _ FCPF16N60NT 100 20s ID, Drain Current [A] 10 DC ID, Drain Current [A] 100s 1ms 10ms 10 10ms DC 1ms 1 Operation in This Area is Limited by R DS(on) *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 1 Operation in This Area is Limited by R DS(on) *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 0.1 0.1 0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000 0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 11. Maximum Drain Current vs. Case Temperature 20 ID, Drain Current [A] 15 10 5 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 FCP16N60N / FCPF16N60NT Rev. A1 4 www.fairchildsemi.com FCP16N60N / FCPF16N60NT N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve _ FCP16N60N 2 1 Thermal Response [Z JC] 0.5 0.2 PDM 0.1 0.1 0.05 0.02 0.01 t1 t2 *Notes: 1. ZJC(t) = 0.93 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) o Single pulse 0.01 0.005 -5 10 10 -4 -3 -2 10 10 Rectangular Pulse Duration [sec] 10 -1 1 Figure 13. Transient Thermal Response Curve _ FCPF16N60NT 5 Thermal Response [Z JC] 0.5 1 0.2 0.1 0.05 PDM t1 t2 0.1 0.02 0.01 *Notes: 1. ZJC(t) = 3.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) o Single pulse 0.01 -5 10 10 -4 10 10 10 1 Rectangular Pulse Duration [sec] -3 -2 -1 10 10 2 FCP16N60N / FCPF16N60NT Rev. A1 5 www.fairchildsemi.com FCP16N60N / FCPF16N60NT N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCP16N60N / FCPF16N60NT Rev. A1 6 www.fairchildsemi.com FCP16N60N / FCPF16N60NT N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as D U T V DD V GS * d v / d t c o n t r o lle d b y R G * IS D c o n t r o lle d b y p u ls e p e r io d VGS ( D r iv e r ) G a te P u ls e W id t h D = -------------------------G a te P u ls e P e r io d 10V IF M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v /d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p FCP16N60N / FCPF16N60NT Rev. A1 7 www.fairchildsemi.com FCP16N60N / FCPF16N60NT N-Channel MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters FCP16N60N / FCPF16N60NT Rev. A1 8 www.fairchildsemi.com FCP16N60N / FCPF16N60NT N-Channel MOSFET Mechanical Dimensions TO-220F 3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70) 6.68 0.20 15.80 0.20 (1.00x45) MAX1.47 9.75 0.30 0.80 0.10 ) 0 (3 0.35 0.10 2.54TYP [2.54 0.20] #1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20 +0.10 2.76 0.20 9.40 0.20 Dimensions in Millimeters FCP16N60N / FCPF16N60NT Rev. A1 15.87 0.20 www.fairchildsemi.com 9 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPowerTM Auto-SPMTM Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM* TM* (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FETBenchTM FlashWriter(R)* FPSTM F-PFSTM FRFET(R) SM Global Power Resource Green FPSTM Green FPSTM e-SeriesTM GmaxTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PowerTrench(R) PowerXSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW/W/kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM Sync-LockTM (R) * The Power Franchise (R) TinyBoostTM TinyBuckTM TinyCalcTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM TriFault DetectTM TRUECURRENTTM* SerDesTM PDP SPMTM Power-SPMTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM XSTM * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 (c) 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com |
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