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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 40 Volts P-channel: VOLTAGE 40 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHM4269JPT CURRENT 6.1 Ampere CURRENT 5.2 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability. 1 SO-8 4.06 (0.160) 3.70 (0.146) 8 CONSTRUCTION * N-Channel & P-Channel Enhancement in the package 5.00 (0.197) 4.69 (0.185) 4 5 .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002) .25 (0.010) .17 (0.007) 6.20 (0.244) 5.80 (0.228) CIRCUIT 8 D1 D1 D2 D2 5 1 4 S1 G1 S2 G2 Dimensions in millimeters SO-8 Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted N-Channel P-Channel Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous 40 -40 V V 20 6.1 (Note 3) 20 -5.2 ID - Pulsed PD TJ TSTG A 20 2000 -55 to 150 -55 to 150 -20 mW C C Maximum Power Dissipation at Ta=25C Operating Temperature Range Storage Temperature Range Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 62.5 C/W 2007-06 ELECTRICAL CHARACTERISTIC ( CHM4269JPT ) N-Channel Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = 250 A VDS = 40 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V 40 1 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 A VGS=10V, ID=6A VGS=4.5V, ID=5A 1 3 32 V m 46 3 S Forward Transconductance VDS =5V, ID = 6A Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 20V, VGS = 0V, f = 1.0 MHz 1050 155 95 pF SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q gd ton tr toff tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=20V, ID=6A VGS=10V V DD= 20V ID = 6A , VGS = 10 V RGEN= 3 20.5 3.5 4.0 14 10 17 18 27 nC 30 20 35 35 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current (Note 1) 1.0 1.0 A V Drain-Source Diode Forward Voltage IS = 1.0A , VGS = 0 V (Note 2) ELECTRICAL CHARACTERISTIC ( CHM4269JPT ) P-Channel Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = -250 A VDS = -40 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V -40 -1 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = -250 A VGS=-10V, ID=-5A VGS=-4.5V, ID=-2A -1 -3 43 V m 65 3 S Forward Transconductance VDS = -5V , ID = -4.8A Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -20V, VGS = 0V, f = 1.0 MHz 1115 205 120 pF SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q gd ton tr toff tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=-20V, ID=-5A VGS=-10V V DD= -20V I D = -5A , VGS = -10 V RGEN= 3 20 3.3 4.1 12 5 40 10 26 nC 25 10 80 20 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current (Note 1) -1.0 -1.0 A V Drain-Source Diode Forward Voltage IS = -1.0A , VGS = 0 V (Note 2) RATING CHARACTERISTIC CURVES ( CHM4269JPT ) N-Channel Typical Electrical Characteristics Figure 1. Output Characteristics 30 20 Figure 2. Transfer Characteristics 24 16 I D , DRAIN CURRENT (A) V G S =1 0,5,4.5V 18 I D , DRAIN CURRENT (A) 12 VG S =4 .0V 12 8 J=125C T 4 TJ=25C TJ=-55C 6 VG S =3 .5V 0 0 3.0 2.0 1.0 V DS , DRAIN-TO-SOURCE VOLTAGE (V) 4.0 0 2.0 2.5 3.0 3.5 4.0 4.5 VGS , GATE-TO-SOURCE VOLTAGE (V) Figure 3. Gate Charge 10 VDS=20V ID=8A 2.2 Figure 4. On-Resistance Variation with Temperature VGS=6V ID=10A VGS , GATE TO SOURCE VOLTAGE (V) DRAIN-SOURCE ON-RESISTANCE 8 1.9 R DS(on) , NO RMALIZED 0 4 8 12 16 Qg , TOTAL GATE CHARGE (nC) 20 24 1.6 6 1.3 4 1.0 2 0.7 0 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (C) 150 200 Figure 5. Gate Threshold Variation with Temperature 1.3 1.2 VDS=VGS ID=250uA Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (C) 125 150 RATING CHARACTERISTIC CURVES ( CHM4269JPT ) P-Channel Typical Electrical Characteristics Figure 1. Output Characteristics 30 25 Figure 2. Transfer Characteristics VG S =- 10,-6,-5,-4.5V 24 20 -I D , DRAIN CURRENT (A) VG S =- 4.0V 18 -I D , DRAIN CURRENT (A) 15 12 10 VG S =- 3.5V 6 TJ=125C 5 TJ=25C TJ=-55C VG S =-3 .0V 0 0 1.0 4.0 2.0 3.0 -VDS , DRAIN-TO-SOURCE VOLTAGE (V) 5.0 0 1.5 3.0 4.0 2.0 -VGS , GATE-TO-SOURCE VOLTAGE (V) 5.0 Figure 3. Gate Charge 10 VDS=-20V ID=-5A 2.2 Figure 4. On-Resistance Variation with Temperature VGS=-5V ID=-10A 1.9 -VGS , GATE TO SOURCE VOLTAGE (V) 8 DRAIN-SOURCE ON-RESISTANCE R DS(on) , NO RMALIZED 0 4 8 12 Qg , TOTAL GATE CHARGE (nC) 16 20 6 1.6 1.3 4 1.0 2 0.7 0 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (C) 150 200 Figure 5. Gate Threshold Variation with Temperature 1.3 1.2 VDS=VGS ID=250uA Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (C) 125 150 |
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