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| SKM 100GB128DN Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANSTM 2N SPT IGBT Module SKM 100GB128DN Inverse diode Characteristics Symbol Conditions IGBT min. typ. max. Units Preliminary Data Features Typical Applications Inverse diode Thermal characteristics Mechanical data GB 1 26-02-2004 SCT (c) by SEMIKRON SKM 100GB128DN Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 26-02-2004 SCT (c) by SEMIKRON SKM 100GB128DN Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 26-02-2004 SCT (c) by SEMIKRON SKM 100GB128DN Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 26-02-2004 SCT (c) by SEMIKRON |
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