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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 1/9
MTN10N60E3
Description
BVDSS : 650V @Tj=150 RDS(ON) : 0.75 ID : 10A
The MTN10N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications
Features
* BVDSS=650V typically @ Tj=150 * Low On Resistance * Simple Drive Requirement * Low Gate Charge * Fast Switching Characteristic * RoHS compliant package
Applications
* Adaptor * LCD Panel Power * TV Main Power * SMPS Standby Power
Symbol
MTN10N60E3
Outline
TO-220
GGate DDrain SSource
GDS
MTN10N60E3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25C)
Parameter Symbol
Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 2/9
Limits
Unit
Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100C Pulsed Drain Current @ VGS=10V (Note 2) Single Pulse Avalanche Energy @ L=10mH, ID=10 Amps, VDD=50V Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Total Power Dissipation (TC=25) Linear Derating Factor Operating Junction and Storage Temperature
Note : *1. TJ=+25 to +150. *2. Repetitive rating; pulse width limited by maximum junction temperature. *3. ISD=10A, dI/dt<100A/s, VDDVDS VGS ID ID IDM EAS EAR dv/dt TL TPKG Pd
600 30 10 6 40 484 21.6 3.0 300 260
V V A A A mJ V/ns C C W W/C C
216 1.72 Tj, Tstg -55~+150
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 0.58 62 Unit C/W C/W
MTN10N60E3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Tj=25C, unless otherwise specified)
Symbol Min. Typ. 650 0.631 700 6.8 0.65 39 9.5 17.6 19 16 49 16 1882 170 20 352 2.9 Max. 4.0 100 25 250 0.75 1.5 10 40 528 4.35 Unit V V V/C V V S nA A A Test Conditions Static BVDSS 600 BVDSS BVDSS/Tj BVDS VGS(th) 2.0 *GFS IGSS IDSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD *IS *ISM *trr *Qrr -
Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 3/9
VGS=0, ID=250A VGS=0, ID=250A, Tj=150C Reference to 25C, ID=250A VGS=0, ID=10A VDS = VGS, ID=250A VDS =15V, ID=10A VGS=30 VDS =600V, VGS =0 VDS =480V, VGS =0, Tj=125C VGS =10V, ID=6A
nC
ID=10A, VDD=300V, VGS=10V VDD=300V, ID=10A, VGS=10V, RG=9.1
ns
pF
VGS=0V, VDS=25V, f=1MHz
V A ns C
IS=10A, VGS=0V VD=VG=0, VS=1.3V VGS=0, IF=10A, dI/dt=100A/s
*Pulse Test : Pulse Width 300s, Duty Cycle2%
Ordering Information
Device MTN10N60E3 Package TO-220 (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Marking 10N60
MTN10N60E3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 4/9
MTN10N60E3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 5/9
MTN10N60E3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 6/9
MTN10N60E3
CYStek Product Specification
CYStech Electronics Corp.
Test Circuit and Waveforms
Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 7/9
MTN10N60E3
CYStek Product Specification
CYStech Electronics Corp.
Test Circuit and Waveforms(Cont.)
Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 8/9
MTN10N60E3
CYStek Product Specification
CYStech Electronics Corp.
TO-220AB Dimension
Marking:
E C
Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 9/9
A D
B
H I G 4 P M 3 2 1 N K
Device Name
10N60
Date Code
O
3-Lead TO-220AB Plastic Package CYStek Package Code: E3
Style: Pin 1.Gate 2.Drain 3.Source 4.Drain
*: Typical
DIM A B C D E G H
Inches Min. Max. 0.2441 0.2598 0.3386 0.3543 0.1732 0.1890 0.0492 0.0571 0.0142 0.0197 0.3858 0.4094 *0.6398
Millimeters Min. Max. 6.20 6.60 8.60 9.00 4.40 4.80 1.25 1.45 0.36 0.50 9.80 10.40 *16.25
DIM I K M N O P
Inches Min. Max. *0.1508 0.0299 0.0394 0.0461 0.0579 *0.1000 0.5217 0.5610 0.5787 0.6024
Millimeters Min. Max. *3.83 0.76 1.00 1.17 1.47 *2.54 13.25 14.25 14.70 15.30
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: KFC ; pure tin plated * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN10N60E3
CYStek Product Specification

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